GB1025106A - Improvements relating to the production of thermistors - Google Patents

Improvements relating to the production of thermistors

Info

Publication number
GB1025106A
GB1025106A GB4248963A GB4248963A GB1025106A GB 1025106 A GB1025106 A GB 1025106A GB 4248963 A GB4248963 A GB 4248963A GB 4248963 A GB4248963 A GB 4248963A GB 1025106 A GB1025106 A GB 1025106A
Authority
GB
United Kingdom
Prior art keywords
silicon
wafers
rod
parts
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4248963A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WR Grace and Co
Original Assignee
WR Grace and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WR Grace and Co filed Critical WR Grace and Co
Publication of GB1025106A publication Critical patent/GB1025106A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thermistors And Varistors (AREA)

Abstract

1,025,106. Thermistors. W. R. GRACE & CO. Oct. 28, 1963 [Dec. 14, 1962], No. 42489/63. Heading H1K. A process for preparing thermistor devices comprises doping a monocrystalline high purity n-type silicon rod with between 1 and 100 parts of gold per 10<SP>9</SP> of silicon by means of a zone levelling technique. A rod of silicon having an impurity content of less than 100 parts in 10<SP>9</SP> is placed in a zone-melting apparatus together with an w-type silicon seed crystal (resistivity 10-640 ohm/cm.), a silicon phosphorus dope containing 1-4 x 10<SP>4</SP> parts of phosphorus per 10<SP>9</SP> silicon and a quantity of very high purity gold. These materials are then subjected to a zone melting process whereby a monocrystalline rod of silicon having a uniform distribution of gold (preferably 4-20 parts per 10<SP>9</SP>) therein is obtained. The rod is cut into wafers by means of a diamond saw and the resulting wafers are then etched, washed and transferred via an ammonium hydroxide bath to an electrodeless nickel-plating tank. After deposition of the nickel the wafers are heat treated at 210‹ C. for 18 hours in an argon or nitrogen atmosphere. The wafers are then diced using an ultrasonic saw and tinned copper leads are soldered to each of the dice. The edges of the dice are ground away to remove any surplus metal which may be short-circuiting the electrodes and to adjust the resistance value to be equal to that of a standard thermistor. The devices are finally painted with a white silicone enamel or with vulcanized silicone rubber.
GB4248963A 1962-12-14 1963-10-28 Improvements relating to the production of thermistors Expired GB1025106A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24480562A 1962-12-14 1962-12-14

Publications (1)

Publication Number Publication Date
GB1025106A true GB1025106A (en) 1966-04-06

Family

ID=22924174

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4248963A Expired GB1025106A (en) 1962-12-14 1963-10-28 Improvements relating to the production of thermistors

Country Status (2)

Country Link
DE (1) DE1465585A1 (en)
GB (1) GB1025106A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093102A1 (en) * 2003-04-16 2004-10-28 Robert Bosch Gmbh Electric motor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004093102A1 (en) * 2003-04-16 2004-10-28 Robert Bosch Gmbh Electric motor
US7554249B2 (en) 2003-04-16 2009-06-30 Robert Bosch Gmbh Electric motor

Also Published As

Publication number Publication date
DE1465585A1 (en) 1969-09-11

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