GB1002704A - Improvements in the production of thermistor devices - Google Patents
Improvements in the production of thermistor devicesInfo
- Publication number
- GB1002704A GB1002704A GB4249063A GB4249063A GB1002704A GB 1002704 A GB1002704 A GB 1002704A GB 4249063 A GB4249063 A GB 4249063A GB 4249063 A GB4249063 A GB 4249063A GB 1002704 A GB1002704 A GB 1002704A
- Authority
- GB
- United Kingdom
- Prior art keywords
- wafers
- silicon
- rod
- gold
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 235000012431 wafers Nutrition 0.000 abstract 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 6
- 239000010703 silicon Substances 0.000 abstract 6
- 229910052710 silicon Inorganic materials 0.000 abstract 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- 239000010931 gold Substances 0.000 abstract 3
- 229910052737 gold Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 229910052786 argon Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 238000004857 zone melting Methods 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000908 ammonium hydroxide Substances 0.000 abstract 1
- 239000012300 argon atmosphere Substances 0.000 abstract 1
- 239000012298 atmosphere Substances 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 210000003298 dental enamel Anatomy 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910003460 diamond Inorganic materials 0.000 abstract 1
- 239000010432 diamond Substances 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001307 helium Substances 0.000 abstract 1
- 229910052734 helium Inorganic materials 0.000 abstract 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000012299 nitrogen atmosphere Substances 0.000 abstract 1
- 229920001296 polysiloxane Polymers 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 abstract 1
- 239000004945 silicone rubber Substances 0.000 abstract 1
- 238000009827 uniform distribution Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
- H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
1,002,704. Thermistors. W. R. GRACE & CO. Oct. 28, 1963 [Dec. 14, 1962], No. 42490/63. Drawings to Specification. Heading H1K. A process for preparing thermistor devices comprises doping a monocrystalline high purity P-type silicon rod with between 1 and 1500 parts of gold per 10<SP>9</SP> of silicon by means of a zone levelling technique. A rod of silicon having an impurity content of less than 1 part in 10<SP>9</SP> is placed in a zone-melting apparatus together with a P-type silicon seed crystal (resistively 20-50 ohm cm.) and a quantity of very high purity gold. These materials are subjected to a zone melting process whereby a monocrystalline rod of silicon having a uniform distribution of gold (preferably 50- 1000 parts per 10<SP>9</SP>) therein is obtained. The rod is cut into wafers by means of a diamond saw and the resulting wafers are then etched and washed. Aluminium is deposited on to the wafers by means of flash heating in a vacuum (8.5 x 10<SP>-5</SP> mm. Hg). The wafers are then heated in an inert atmosphere (helium, argon or nitrogen) at between 580‹ and 630‹ C. for 20 minutes in order to alloy the aluminium and silicon together, The wafers are etched, washed and then transferred via an ammonium hydroxide bath to an electrodeless nickelplating tank. After deposition of the nickel the wafers are heat treated at 210‹ C. for 18 hours in an argon or nitrogen atmosphere. The wafers are then sliced using an ultrasonic saw and tinned copper leads are soldered to each of the dice. The edges of the dice are ground away to remove any surplus metal which may be short-circuiting the electrodes and to adjust the resistance value to be equal to that of a standard thermistor. The devices are finally painted with a white silicone enamel or with vulcanized silicone rubber.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24480662A | 1962-12-14 | 1962-12-14 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1002704A true GB1002704A (en) | 1965-08-25 |
Family
ID=22924176
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4249063A Expired GB1002704A (en) | 1962-12-14 | 1963-10-28 | Improvements in the production of thermistor devices |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1465586A1 (en) |
| FR (1) | FR1514923A (en) |
| GB (1) | GB1002704A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3435399A (en) * | 1966-04-19 | 1969-03-25 | Gen Electric | Thermistor device and method of producing said device |
| WO1997049104A1 (en) * | 1996-06-17 | 1997-12-24 | Thermometrics, Inc. | Sensors and methods of making wafer sensors |
| US6099164A (en) * | 1995-06-07 | 2000-08-08 | Thermometrics, Inc. | Sensors incorporating nickel-manganese oxide single crystals |
| US6125529A (en) * | 1996-06-17 | 2000-10-03 | Thermometrics, Inc. | Method of making wafer based sensors and wafer chip sensors |
| WO2004093102A1 (en) * | 2003-04-16 | 2004-10-28 | Robert Bosch Gmbh | Electric motor |
-
1963
- 1963-10-28 GB GB4249063A patent/GB1002704A/en not_active Expired
- 1963-12-06 DE DE19631465586 patent/DE1465586A1/en active Pending
- 1963-12-13 FR FR957078A patent/FR1514923A/en not_active Expired
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3435399A (en) * | 1966-04-19 | 1969-03-25 | Gen Electric | Thermistor device and method of producing said device |
| US6099164A (en) * | 1995-06-07 | 2000-08-08 | Thermometrics, Inc. | Sensors incorporating nickel-manganese oxide single crystals |
| WO1997049104A1 (en) * | 1996-06-17 | 1997-12-24 | Thermometrics, Inc. | Sensors and methods of making wafer sensors |
| US6125529A (en) * | 1996-06-17 | 2000-10-03 | Thermometrics, Inc. | Method of making wafer based sensors and wafer chip sensors |
| WO2004093102A1 (en) * | 2003-04-16 | 2004-10-28 | Robert Bosch Gmbh | Electric motor |
| US7554249B2 (en) | 2003-04-16 | 2009-06-30 | Robert Bosch Gmbh | Electric motor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1514923A (en) | 1968-03-01 |
| DE1465586A1 (en) | 1969-09-11 |
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