GB1002704A - Improvements in the production of thermistor devices - Google Patents

Improvements in the production of thermistor devices

Info

Publication number
GB1002704A
GB1002704A GB4249063A GB4249063A GB1002704A GB 1002704 A GB1002704 A GB 1002704A GB 4249063 A GB4249063 A GB 4249063A GB 4249063 A GB4249063 A GB 4249063A GB 1002704 A GB1002704 A GB 1002704A
Authority
GB
United Kingdom
Prior art keywords
wafers
silicon
rod
gold
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4249063A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WR Grace and Co
Original Assignee
WR Grace and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WR Grace and Co filed Critical WR Grace and Co
Publication of GB1002704A publication Critical patent/GB1002704A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/04—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having negative temperature coefficient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C1/00—Details
    • H01C1/14—Terminals or tapping points or electrodes specially adapted for resistors; Arrangements of terminals or tapping points or electrodes on resistors
    • H01C1/1406—Terminals or electrodes formed on resistive elements having positive temperature coefficient

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Thermistors And Varistors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1,002,704. Thermistors. W. R. GRACE & CO. Oct. 28, 1963 [Dec. 14, 1962], No. 42490/63. Drawings to Specification. Heading H1K. A process for preparing thermistor devices comprises doping a monocrystalline high purity P-type silicon rod with between 1 and 1500 parts of gold per 10<SP>9</SP> of silicon by means of a zone levelling technique. A rod of silicon having an impurity content of less than 1 part in 10<SP>9</SP> is placed in a zone-melting apparatus together with a P-type silicon seed crystal (resistively 20-50 ohm cm.) and a quantity of very high purity gold. These materials are subjected to a zone melting process whereby a monocrystalline rod of silicon having a uniform distribution of gold (preferably 50- 1000 parts per 10<SP>9</SP>) therein is obtained. The rod is cut into wafers by means of a diamond saw and the resulting wafers are then etched and washed. Aluminium is deposited on to the wafers by means of flash heating in a vacuum (8.5 x 10<SP>-5</SP> mm. Hg). The wafers are then heated in an inert atmosphere (helium, argon or nitrogen) at between 580‹ and 630‹ C. for 20 minutes in order to alloy the aluminium and silicon together, The wafers are etched, washed and then transferred via an ammonium hydroxide bath to an electrodeless nickelplating tank. After deposition of the nickel the wafers are heat treated at 210‹ C. for 18 hours in an argon or nitrogen atmosphere. The wafers are then sliced using an ultrasonic saw and tinned copper leads are soldered to each of the dice. The edges of the dice are ground away to remove any surplus metal which may be short-circuiting the electrodes and to adjust the resistance value to be equal to that of a standard thermistor. The devices are finally painted with a white silicone enamel or with vulcanized silicone rubber.
GB4249063A 1962-12-14 1963-10-28 Improvements in the production of thermistor devices Expired GB1002704A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24480662A 1962-12-14 1962-12-14

Publications (1)

Publication Number Publication Date
GB1002704A true GB1002704A (en) 1965-08-25

Family

ID=22924176

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4249063A Expired GB1002704A (en) 1962-12-14 1963-10-28 Improvements in the production of thermistor devices

Country Status (3)

Country Link
DE (1) DE1465586A1 (en)
FR (1) FR1514923A (en)
GB (1) GB1002704A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435399A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
WO1997049104A1 (en) * 1996-06-17 1997-12-24 Thermometrics, Inc. Sensors and methods of making wafer sensors
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
US6125529A (en) * 1996-06-17 2000-10-03 Thermometrics, Inc. Method of making wafer based sensors and wafer chip sensors
WO2004093102A1 (en) * 2003-04-16 2004-10-28 Robert Bosch Gmbh Electric motor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3435399A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
US6099164A (en) * 1995-06-07 2000-08-08 Thermometrics, Inc. Sensors incorporating nickel-manganese oxide single crystals
WO1997049104A1 (en) * 1996-06-17 1997-12-24 Thermometrics, Inc. Sensors and methods of making wafer sensors
US6125529A (en) * 1996-06-17 2000-10-03 Thermometrics, Inc. Method of making wafer based sensors and wafer chip sensors
WO2004093102A1 (en) * 2003-04-16 2004-10-28 Robert Bosch Gmbh Electric motor
US7554249B2 (en) 2003-04-16 2009-06-30 Robert Bosch Gmbh Electric motor

Also Published As

Publication number Publication date
DE1465586A1 (en) 1969-09-11
FR1514923A (en) 1968-03-01

Similar Documents

Publication Publication Date Title
US2691577A (en) Alloys and rectifiers made thereof
US2809136A (en) Apparatus and method of preparing crystals of silicon germanium group
US2944321A (en) Method of fabricating semiconductor devices
GB1002704A (en) Improvements in the production of thermistor devices
US2960419A (en) Method and device for producing electric semiconductor devices
US2725316A (en) Method of preparing pn junctions in semiconductors
GB1022427A (en) An apparatus for zone-by-zone melting a rod of crystalline material
GB1025106A (en) Improvements relating to the production of thermistors
GB2120954A (en) Reducing impurity levels in pulled single crystals
GB1282363A (en) Improvements in or relating to apparatus for use in the diffusion of a doping substance into a body of semiconductor material
US3669763A (en) Traveling solvent method of growing silicon carbide crystals and junctions utilizing yttrium as the solvent
US4255228A (en) Method of growing quartz
US2438923A (en) Method and means for making selenium elements
US3232803A (en) Chemical etching of tungsten
US3773553A (en) Silicon carbide junction diode
US3409467A (en) Silicon carbide device
US3377182A (en) Method of producing monocrystalline semiconductor bodies
US3094764A (en) Apparatus for manufacturing semiconductor devices
JPS5649520A (en) Vapor growth of compound semiconductor
JPS57118091A (en) Manufacturing apparatus for beltlike silicon crystal
JPH0776160B2 (en) Heat treatment method for compound semiconductor single crystal
JP2016013933A (en) UNDOPED SEMI-INSULATING Ga2O3 SYSTEM SINGLE CRYSTAL SUBSTRATE AND MANUFACTURING METHOD THEREOF
GB972979A (en) Method of producing uniform resistivity single semiconductor crystals
GB1285853A (en) Improvements in or relating to the manufacture of semiconductor monocrystals
JPS6453732A (en) Method for casting silicon