GB1311404A - Photoelectric conductor devices - Google Patents
Photoelectric conductor devicesInfo
- Publication number
- GB1311404A GB1311404A GB3858971A GB3858971A GB1311404A GB 1311404 A GB1311404 A GB 1311404A GB 3858971 A GB3858971 A GB 3858971A GB 3858971 A GB3858971 A GB 3858971A GB 1311404 A GB1311404 A GB 1311404A
- Authority
- GB
- United Kingdom
- Prior art keywords
- selenide
- layer
- cadmium
- selenium
- sulphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 title 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 5
- 150000003346 selenoethers Chemical class 0.000 abstract 5
- 239000011669 selenium Substances 0.000 abstract 4
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 3
- 150000001661 cadmium Chemical class 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 3
- 239000001301 oxygen Substances 0.000 abstract 3
- 229910052760 oxygen Inorganic materials 0.000 abstract 3
- 229910052711 selenium Inorganic materials 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000005083 Zinc sulfide Substances 0.000 abstract 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 2
- WBFMCDAQUDITAS-UHFFFAOYSA-N arsenic triselenide Chemical compound [Se]=[As][Se][As]=[Se] WBFMCDAQUDITAS-UHFFFAOYSA-N 0.000 abstract 2
- 229910052797 bismuth Inorganic materials 0.000 abstract 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- JPJALAQPGMAKDF-UHFFFAOYSA-N selenium dioxide Chemical compound O=[Se]=O JPJALAQPGMAKDF-UHFFFAOYSA-N 0.000 abstract 2
- MCAHWIHFGHIESP-UHFFFAOYSA-N selenous acid Chemical compound O[Se](O)=O MCAHWIHFGHIESP-UHFFFAOYSA-N 0.000 abstract 2
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- QIHHYQWNYKOHEV-UHFFFAOYSA-N 4-tert-butyl-3-nitrobenzoic acid Chemical compound CC(C)(C)C1=CC=C(C(O)=O)C=C1[N+]([O-])=O QIHHYQWNYKOHEV-UHFFFAOYSA-N 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 230000032683 aging Effects 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 abstract 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 229940000207 selenious acid Drugs 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 239000007787 solid Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Light Receiving Elements (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP45071392A JPS4830193B1 (enrdf_load_stackoverflow) | 1970-08-17 | 1970-08-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1311404A true GB1311404A (en) | 1973-03-28 |
Family
ID=13459185
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3858971A Expired GB1311404A (en) | 1970-08-17 | 1971-08-17 | Photoelectric conductor devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3816787A (enrdf_load_stackoverflow) |
| JP (1) | JPS4830193B1 (enrdf_load_stackoverflow) |
| CA (1) | CA922421A (enrdf_load_stackoverflow) |
| DE (1) | DE2141233B2 (enrdf_load_stackoverflow) |
| FR (1) | FR2112921A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1311404A (enrdf_load_stackoverflow) |
| NL (1) | NL161613C (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2273074C1 (ru) * | 2004-07-20 | 2006-03-27 | ОАО "Центральный научно-исследовательский институт "Электрон" | Мишень видикона |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2213580B1 (enrdf_load_stackoverflow) * | 1972-10-12 | 1977-09-09 | Matsushita Electric Ind Co Ltd | |
| DE2452934A1 (de) * | 1973-12-07 | 1975-06-12 | Xerox Corp | Xerographisches element |
| US3947717A (en) * | 1975-03-31 | 1976-03-30 | Rca Corporation | Photoconductor of cadmium selenide and aluminum oxide |
| JPS58147414U (ja) * | 1982-03-29 | 1983-10-04 | チロン・ジヤパン株式会社 | 装身具 |
| JP2753264B2 (ja) * | 1988-05-27 | 1998-05-18 | 株式会社日立製作所 | 撮像管 |
| CN119029054B (zh) * | 2024-10-24 | 2025-04-04 | 正泰新能科技股份有限公司 | 一种边缘钝化的晶硅电池与钙钛矿晶硅叠层电池及制备 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2843772A (en) * | 1953-03-25 | 1958-07-15 | Rca Corp | Cathode ray tube and target |
| GB840763A (en) * | 1955-08-17 | 1960-07-13 | Emi Ltd | Improvements in light sensitive targets |
| DE1614753A1 (de) * | 1966-01-11 | 1970-12-10 | Tokyo Shibaura Electric Co | Fotoelektrische Leiter |
| US3346755A (en) * | 1966-03-31 | 1967-10-10 | Rca Corp | Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials |
| US3571646A (en) * | 1967-07-17 | 1971-03-23 | Tokyo Shibaura Electric Co | Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride |
-
1970
- 1970-08-17 JP JP45071392A patent/JPS4830193B1/ja active Pending
-
1971
- 1971-08-17 DE DE2141233A patent/DE2141233B2/de not_active Ceased
- 1971-08-17 CA CA120703A patent/CA922421A/en not_active Expired
- 1971-08-17 GB GB3858971A patent/GB1311404A/en not_active Expired
- 1971-08-17 FR FR7129957A patent/FR2112921A1/fr not_active Withdrawn
- 1971-08-17 NL NL7111347.A patent/NL161613C/xx not_active IP Right Cessation
- 1971-08-17 US US00172541A patent/US3816787A/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| RU2273074C1 (ru) * | 2004-07-20 | 2006-03-27 | ОАО "Центральный научно-исследовательский институт "Электрон" | Мишень видикона |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7111347A (enrdf_load_stackoverflow) | 1972-02-21 |
| FR2112921A1 (enrdf_load_stackoverflow) | 1972-06-23 |
| DE2141233A1 (de) | 1972-02-24 |
| NL161613B (nl) | 1979-09-17 |
| JPS4830193B1 (enrdf_load_stackoverflow) | 1973-09-18 |
| DE2141233B2 (de) | 1973-09-20 |
| CA922421A (en) | 1973-03-06 |
| US3816787A (en) | 1974-06-11 |
| NL161613C (nl) | 1980-02-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 435 | Patent endorsed 'licences of right' on the date specified (sect. 35/1949) | ||
| PCNP | Patent ceased through non-payment of renewal fee |