GB1310806A - Transistors - Google Patents

Transistors

Info

Publication number
GB1310806A
GB1310806A GB2481871*A GB2481871A GB1310806A GB 1310806 A GB1310806 A GB 1310806A GB 2481871 A GB2481871 A GB 2481871A GB 1310806 A GB1310806 A GB 1310806A
Authority
GB
United Kingdom
Prior art keywords
emitter
electrode
region
base
alloyed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2481871*A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1310806A publication Critical patent/GB1310806A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
GB2481871*A 1970-03-19 1971-04-19 Transistors Expired GB1310806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19702013220 DE2013220A1 (de) 1970-03-19 1970-03-19 Verfahren zum Herstellen einer Transistor anordnung aus Silicium

Publications (1)

Publication Number Publication Date
GB1310806A true GB1310806A (en) 1973-03-21

Family

ID=5765627

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2481871*A Expired GB1310806A (en) 1970-03-19 1971-04-19 Transistors

Country Status (8)

Country Link
US (1) US3754321A (https=)
AT (1) AT312054B (https=)
CH (1) CH522954A (https=)
DE (1) DE2013220A1 (https=)
FR (1) FR2083421B1 (https=)
GB (1) GB1310806A (https=)
NL (1) NL7103588A (https=)
SE (1) SE378154B (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4999318A (en) * 1986-11-12 1991-03-12 Hitachi, Ltd. Method for forming metal layer interconnects using stepped via walls

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3523038A (en) * 1965-06-02 1970-08-04 Texas Instruments Inc Process for making ohmic contact to planar germanium semiconductor devices
US3571913A (en) * 1968-08-20 1971-03-23 Hewlett Packard Co Method of making ohmic contact to a shallow diffused transistor
ES374318A1 (es) * 1968-12-10 1972-03-16 Matsushita Electronics Corp Un metodo de fabricar un dispositivo semiconductor sensiblea la presion.

Also Published As

Publication number Publication date
DE2013220A1 (de) 1971-11-25
FR2083421A1 (https=) 1971-12-17
CH522954A (de) 1972-05-15
NL7103588A (https=) 1971-09-21
SE378154B (https=) 1975-08-18
FR2083421B1 (https=) 1977-01-21
AT312054B (de) 1973-12-10
US3754321A (en) 1973-08-28

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PLNP Patent lapsed through nonpayment of renewal fees