GB1308764A - Production of semiconductor components - Google Patents
Production of semiconductor componentsInfo
- Publication number
- GB1308764A GB1308764A GB1095171*[A GB1095171A GB1308764A GB 1308764 A GB1308764 A GB 1308764A GB 1095171 A GB1095171 A GB 1095171A GB 1308764 A GB1308764 A GB 1308764A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- windows
- opened
- semi
- window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
Landscapes
- Bipolar Transistors (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2020531A DE2020531C2 (de) | 1970-04-27 | 1970-04-27 | Verfahren zur Herstellung von Silizium-Höchstfrequenz-Planartransistoren |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1308764A true GB1308764A (en) | 1973-03-07 |
Family
ID=5769521
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1095171*[A Expired GB1308764A (en) | 1970-04-27 | 1971-04-23 | Production of semiconductor components |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3798080A (enExample) |
| JP (1) | JPS5652444B1 (enExample) |
| CA (1) | CA918307A (enExample) |
| CH (1) | CH522291A (enExample) |
| DE (1) | DE2020531C2 (enExample) |
| FR (1) | FR2086373B1 (enExample) |
| GB (1) | GB1308764A (enExample) |
| NL (1) | NL7104800A (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3977920A (en) * | 1970-10-30 | 1976-08-31 | Hitachi, Ltd. | Method of fabricating semiconductor device using at least two sorts of insulating films different from each other |
| US3860466A (en) * | 1971-10-22 | 1975-01-14 | Texas Instruments Inc | Nitride composed masking for integrated circuits |
| JPS6028397B2 (ja) * | 1978-10-26 | 1985-07-04 | 株式会社東芝 | 半導体装置の製造方法 |
| US4402128A (en) * | 1981-07-20 | 1983-09-06 | Rca Corporation | Method of forming closely spaced lines or contacts in semiconductor devices |
| JPS6192150U (enExample) * | 1984-11-22 | 1986-06-14 | ||
| JP6900727B2 (ja) | 2017-03-28 | 2021-07-07 | 横河電機株式会社 | エンジニアリング支援システム、エンジニアリング支援方法、クライアント装置、及びクライアントプログラム |
| JP2019057196A (ja) | 2017-09-22 | 2019-04-11 | 横河電機株式会社 | 情報収集装置、情報収集方法 |
| JP6897452B2 (ja) | 2017-09-22 | 2021-06-30 | 横河電機株式会社 | 情報収集システム |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3477886A (en) * | 1964-12-07 | 1969-11-11 | Motorola Inc | Controlled diffusions in semiconductive materials |
| US3597667A (en) * | 1966-03-01 | 1971-08-03 | Gen Electric | Silicon oxide-silicon nitride coatings for semiconductor devices |
| DE158928C (enExample) * | 1966-09-26 | |||
| DE1614435B2 (de) * | 1967-02-23 | 1979-05-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von aus Germanium bestehenden, doppeldiffundierten Halbleiteranordnungen |
| US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
| NL6807952A (enExample) * | 1967-07-06 | 1969-01-08 | ||
| FR2020020B1 (enExample) * | 1968-10-07 | 1974-09-20 | Ibm | |
| US3615940A (en) * | 1969-03-24 | 1971-10-26 | Motorola Inc | Method of forming a silicon nitride diffusion mask |
-
1970
- 1970-04-27 DE DE2020531A patent/DE2020531C2/de not_active Expired
-
1971
- 1971-04-07 CH CH511071A patent/CH522291A/de not_active IP Right Cessation
- 1971-04-08 NL NL7104800A patent/NL7104800A/xx unknown
- 1971-04-19 FR FR7113691A patent/FR2086373B1/fr not_active Expired
- 1971-04-22 US US00136341A patent/US3798080A/en not_active Expired - Lifetime
- 1971-04-23 GB GB1095171*[A patent/GB1308764A/en not_active Expired
- 1971-04-27 JP JP2788071A patent/JPS5652444B1/ja active Pending
- 1971-04-27 CA CA111441A patent/CA918307A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2086373B1 (enExample) | 1977-08-05 |
| US3798080A (en) | 1974-03-19 |
| NL7104800A (enExample) | 1971-10-29 |
| DE2020531C2 (de) | 1982-10-21 |
| DE2020531A1 (de) | 1971-11-18 |
| JPS5652444B1 (enExample) | 1981-12-12 |
| FR2086373A1 (enExample) | 1971-12-31 |
| CA918307A (en) | 1973-01-02 |
| CH522291A (de) | 1972-06-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1506066A (en) | Manufacture of semiconductor devices | |
| GB1332277A (en) | Method of making a semiconductor device | |
| EP0241059A3 (en) | Method for manufacturing a power mos transistor | |
| GB1132294A (en) | Method of depositing refractory metals | |
| GB1436784A (en) | Method of making a semiconductor device | |
| GB1308764A (en) | Production of semiconductor components | |
| GB1198696A (en) | Semiconductor Devices and Methods of Making Them. | |
| GB1137577A (en) | Improvements in and relating to semiconductor devices | |
| GB1515184A (en) | Semiconductor device manufacture | |
| GB1218676A (en) | Method of manufacturing semiconductor components | |
| US3541676A (en) | Method of forming field-effect transistors utilizing doped insulators as activator source | |
| GB1081376A (en) | Method of producing a semiconductor device | |
| GB1340306A (en) | Manufacture of semiconductor devices | |
| GB1270226A (en) | Improvements in transistors | |
| GB1440234A (en) | Method of producing a semiconductor component | |
| GB1099049A (en) | A method of manufacturing transistors | |
| US3817750A (en) | Method of producing a semiconductor device | |
| GB1177320A (en) | Improvements in or relating to the Production of Planar Semiconductor Components | |
| GB1186625A (en) | Improvements in and relating to Semiconductor Devices | |
| GB1501896A (en) | Semiconductor device | |
| GB1470804A (en) | Method for fabrucating semiconductor devices utilizing compo site masking | |
| GB1315573A (en) | Formation of openings in insulating layers in mos semiconductor devices | |
| JPS5235584A (en) | Manufacturing process of semiconductor device | |
| EP0002107A3 (en) | Method of making a planar semiconductor device | |
| GB1324298A (en) | Method of manufacturing a semi-conductor region |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |