GB1300033A - Integrated circuits - Google Patents

Integrated circuits

Info

Publication number
GB1300033A
GB1300033A GB21262/71A GB2126271A GB1300033A GB 1300033 A GB1300033 A GB 1300033A GB 21262/71 A GB21262/71 A GB 21262/71A GB 2126271 A GB2126271 A GB 2126271A GB 1300033 A GB1300033 A GB 1300033A
Authority
GB
United Kingdom
Prior art keywords
mesas
grooves
regions
substrate
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21262/71A
Other languages
English (en)
Inventor
Tzu Fann Shao
Benjamin Johnston Sloan Jr
Billy Max Martin
Loyd Harold Clevenger
Roger Stanley Dunn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of GB1300033A publication Critical patent/GB1300033A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/021—Manufacture or treatment of air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20—Air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]

Landscapes

  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
GB21262/71A 1970-02-13 1971-04-19 Integrated circuits Expired GB1300033A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1104470A 1970-02-13 1970-02-13
US1107070A 1970-02-13 1970-02-13

Publications (1)

Publication Number Publication Date
GB1300033A true GB1300033A (en) 1972-12-20

Family

ID=26681909

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21262/71A Expired GB1300033A (en) 1970-02-13 1971-04-19 Integrated circuits

Country Status (3)

Country Link
DE (1) DE2106540A1 (https=)
FR (1) FR2080989B1 (https=)
GB (1) GB1300033A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3041232A1 (de) * 1979-11-07 1981-05-14 Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung
DE3408552A1 (de) * 1983-03-10 1984-09-20 Tokyo Shibaura Denki K.K., Kawasaki Halbleitervorrichtung und verfahren zur herstellung derselben
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818289A (en) * 1972-04-10 1974-06-18 Raytheon Co Semiconductor integrated circuit structures
DE3716469A1 (de) * 1987-04-07 1988-10-27 Licentia Gmbh Strukturierter halbleiterkoerper

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1493465A (fr) * 1966-05-03 1967-09-01 Radiotechnique Coprim Rtc Perfectionnements aux procédés de fabrication de dispositifs semi-conducteurs
NL144778B (nl) * 1966-12-20 1975-01-15 Western Electric Co Werkwijze voor het vervaardigen van een halfgeleiderinrichting door anisotroop etsen alsmede aldus vervaardigde inrichting.
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
US3483464A (en) * 1967-08-10 1969-12-09 Bell Telephone Labor Inc Voltage regulator systems employing a multifunctional circuit comprising a field effect transistor constant current source
GB1248051A (en) * 1968-03-01 1971-09-29 Post Office Method of making insulated gate field effect transistors
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
DE3041232A1 (de) * 1979-11-07 1981-05-14 Naamloze Vennootschap Philips' Gloeilampenfabrieken, Eindhoven Halbleiteranordnung mit einer anzahl in reihe geschalteter dioden und verfahren zu deren herstellung
DE3408552A1 (de) * 1983-03-10 1984-09-20 Tokyo Shibaura Denki K.K., Kawasaki Halbleitervorrichtung und verfahren zur herstellung derselben

Also Published As

Publication number Publication date
FR2080989A1 (https=) 1971-11-26
FR2080989B1 (https=) 1976-03-19
DE2106540A1 (de) 1971-08-19

Similar Documents

Publication Publication Date Title
GB1083273A (en) Semiconductor integrated circuits and method of making the same
JPS54157092A (en) Semiconductor integrated circuit device
GB1338358A (en) Semiconductor devices
GB1110224A (en) Improvements in or relating to methods of producing semiconductor arrangements
GB1339095A (en) Fabrication of monolithic integrated circuits
GB1467754A (en) Semiconductor arrangements
GB1302251A (https=)
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1234985A (en) Improvements in and relating to methods of manufacturing semiconductor devices
US3846192A (en) Method of producing schottky diodes
GB1217472A (en) Integrated circuits
GB1300033A (en) Integrated circuits
GB1182325A (en) Improvements in and relating to Semiconductor devices
GB1313915A (en) Resistors for integrated circuits
GB1162565A (en) Improvements in and relating to Semiconductor Structures
GB945736A (en) Improvements relating to semiconductor circuits
GB1531811A (en) Complementary transistors and their manufacture
GB1517251A (en) Semiconductor devices
GB1313167A (en) Methods of manufacturing semiconductor devices
GB958242A (en) Semiconductor devices and methods of making same
GB1086607A (en) Method of electrically isolating components in solid-state electronic circuits
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB1481184A (en) Integrated circuits
GB1429696A (https=)
SE7506779L (sv) Symmetriskt arrangemang for att astadkomma en variabel vexelstromsresistans.

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee