FR2080989B1 - - Google Patents

Info

Publication number
FR2080989B1
FR2080989B1 FR7104743A FR7104743A FR2080989B1 FR 2080989 B1 FR2080989 B1 FR 2080989B1 FR 7104743 A FR7104743 A FR 7104743A FR 7104743 A FR7104743 A FR 7104743A FR 2080989 B1 FR2080989 B1 FR 2080989B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7104743A
Other languages
French (fr)
Other versions
FR2080989A1 (https=
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of FR2080989A1 publication Critical patent/FR2080989A1/fr
Application granted granted Critical
Publication of FR2080989B1 publication Critical patent/FR2080989B1/fr
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/60Wet etching
    • H10P50/64Wet etching of semiconductor materials
    • H10P50/642Chemical etching
    • H10P50/644Anisotropic liquid etching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/69Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01Manufacture or treatment
    • H10W10/021Manufacture or treatment of air gaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/20Air gaps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/20Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
FR7104743A 1970-02-13 1971-02-12 Expired FR2080989B1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1104470A 1970-02-13 1970-02-13
US1107070A 1970-02-13 1970-02-13

Publications (2)

Publication Number Publication Date
FR2080989A1 FR2080989A1 (https=) 1971-11-26
FR2080989B1 true FR2080989B1 (https=) 1976-03-19

Family

ID=26681909

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7104743A Expired FR2080989B1 (https=) 1970-02-13 1971-02-12

Country Status (3)

Country Link
DE (1) DE2106540A1 (https=)
FR (1) FR2080989B1 (https=)
GB (1) GB1300033A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3818289A (en) * 1972-04-10 1974-06-18 Raytheon Co Semiconductor integrated circuit structures
US4677456A (en) * 1979-05-25 1987-06-30 Raytheon Company Semiconductor structure and manufacturing method
FR2469804A1 (fr) * 1979-11-07 1981-05-22 Labo Electronique Physique Procede de realisation d'un dispositif semi-conducteur comprenant un assemblage de diodes en serie et dispositif en resultant
JPS59165455A (ja) * 1983-03-10 1984-09-18 Toshiba Corp 半導体装置
DE3716469A1 (de) * 1987-04-07 1988-10-27 Licentia Gmbh Strukturierter halbleiterkoerper

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1493465A (fr) * 1966-05-03 1967-09-01 Radiotechnique Coprim Rtc Perfectionnements aux procédés de fabrication de dispositifs semi-conducteurs
NL144778B (nl) * 1966-12-20 1975-01-15 Western Electric Co Werkwijze voor het vervaardigen van een halfgeleiderinrichting door anisotroop etsen alsmede aldus vervaardigde inrichting.
FR1527898A (fr) * 1967-03-16 1968-06-07 Radiotechnique Coprim Rtc Agencement de dispositifs semi-conducteurs portés par un support commun et son procédé de fabrication
US3483464A (en) * 1967-08-10 1969-12-09 Bell Telephone Labor Inc Voltage regulator systems employing a multifunctional circuit comprising a field effect transistor constant current source
GB1248051A (en) * 1968-03-01 1971-09-29 Post Office Method of making insulated gate field effect transistors
GB1244759A (en) * 1968-12-11 1971-09-02 Associated Semiconductor Mft Improvements in and relating to methods of manufacturing semiconductor devices

Also Published As

Publication number Publication date
FR2080989A1 (https=) 1971-11-26
GB1300033A (en) 1972-12-20
DE2106540A1 (de) 1971-08-19

Similar Documents

Publication Publication Date Title
FR2080989B1 (https=)
ATA96471A (https=)
AU2044470A (https=)
AU1146470A (https=)
AU1473870A (https=)
AU2130570A (https=)
AU2085370A (https=)
AU2017870A (https=)
AU1833270A (https=)
AU1716970A (https=)
AU1326870A (https=)
AU1517670A (https=)
AU1336970A (https=)
AU1591370A (https=)
AU1872870A (https=)
AU2144270A (https=)
AU2131570A (https=)
AU1328670A (https=)
AU2130770A (https=)
AU1343870A (https=)
AU1277070A (https=)
AU1918570A (https=)
AU1247570A (https=)
AU1581370A (https=)
AU1235770A (https=)