GB1298375A - Method of making field effect transistors - Google Patents
Method of making field effect transistorsInfo
- Publication number
- GB1298375A GB1298375A GB49045/70A GB4904570A GB1298375A GB 1298375 A GB1298375 A GB 1298375A GB 49045/70 A GB49045/70 A GB 49045/70A GB 4904570 A GB4904570 A GB 4904570A GB 1298375 A GB1298375 A GB 1298375A
- Authority
- GB
- United Kingdom
- Prior art keywords
- diffusion
- gate
- source
- opening
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 230000005669 field effect Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 13
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- -1 Si 3 N 4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 239000011733 molybdenum Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
- 239000010936 titanium Substances 0.000 abstract 1
- 229910052719 titanium Inorganic materials 0.000 abstract 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
- 239000010937 tungsten Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
- H10D30/0281—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
- H10D30/65—Lateral DMOS [LDMOS] FETs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
- H10D62/126—Top-view geometrical layouts of the regions or the junctions
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP44082570A JPS4831516B1 (enrdf_load_stackoverflow) | 1969-10-17 | 1969-10-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1298375A true GB1298375A (en) | 1972-11-29 |
Family
ID=13778131
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB49045/70A Expired GB1298375A (en) | 1969-10-17 | 1970-10-15 | Method of making field effect transistors |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS4831516B1 (enrdf_load_stackoverflow) |
| DE (1) | DE2050955B2 (enrdf_load_stackoverflow) |
| GB (1) | GB1298375A (enrdf_load_stackoverflow) |
| NL (1) | NL7014977A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT374976B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Fuehlerschaltung zum feststellen des widerstands- wertes eines fuehlerelementes |
| AT374975B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Oszillator |
| AT374974B (de) * | 1974-04-25 | 1984-06-25 | Sony Corp | Rauscheliminierungs-stromkreis |
| US20170110455A1 (en) * | 2015-10-20 | 2017-04-20 | Rohm Co., Ltd. | Semiconductor device and semiconductor integrated circuit using the same |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7606483A (nl) * | 1976-06-16 | 1977-12-20 | Philips Nv | Inrichting voor het mengen van signalen. |
| FR2477778A1 (fr) * | 1980-03-04 | 1981-09-11 | Thomson Csf | Structure de transistor a effet de champ a grille isolee et application a une realisation de portes logiques |
| JPS5793542A (en) * | 1980-12-03 | 1982-06-10 | Hitachi Ltd | Semiconductor integrated circuit device |
-
1969
- 1969-10-17 JP JP44082570A patent/JPS4831516B1/ja active Pending
-
1970
- 1970-10-13 NL NL7014977A patent/NL7014977A/xx unknown
- 1970-10-15 GB GB49045/70A patent/GB1298375A/en not_active Expired
- 1970-10-16 DE DE19702050955 patent/DE2050955B2/de not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT374974B (de) * | 1974-04-25 | 1984-06-25 | Sony Corp | Rauscheliminierungs-stromkreis |
| AT374976B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Fuehlerschaltung zum feststellen des widerstands- wertes eines fuehlerelementes |
| AT374975B (de) * | 1974-05-10 | 1984-06-25 | Sony Corp | Oszillator |
| US20170110455A1 (en) * | 2015-10-20 | 2017-04-20 | Rohm Co., Ltd. | Semiconductor device and semiconductor integrated circuit using the same |
| US10026738B2 (en) * | 2015-10-20 | 2018-07-17 | Rohm Co., Ltd. | Semiconductor device and semiconductor integrated circuit using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| NL7014977A (enrdf_load_stackoverflow) | 1971-04-20 |
| JPS4831516B1 (enrdf_load_stackoverflow) | 1973-09-29 |
| DE2050955B2 (de) | 1972-01-27 |
| DE2050955A1 (de) | 1971-06-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3653978A (en) | Method of making semiconductor devices | |
| US4729001A (en) | Short-channel field effect transistor | |
| GB1408180A (en) | Semiconductor device manufacture | |
| GB1423183A (en) | Complemenatry field effect transistors | |
| JP2001352057A (ja) | 半導体装置、およびその製造方法 | |
| JPH0693494B2 (ja) | 半導体集積回路装置の製造方法 | |
| GB1488151A (en) | Field effect devices | |
| US4316203A (en) | Insulated gate field effect transistor | |
| GB1242896A (en) | Semiconductor device and method of fabrication | |
| GB1327920A (en) | Transistor and method of manufacturing the same | |
| GB1210090A (en) | Insulated gate field effect transistor | |
| KR940004846A (ko) | 반도체장치 및 그 제조방법 | |
| KR890005884A (ko) | 바이폴라 트랜지스터의 제조방법 | |
| KR840005927A (ko) | 반도체 집적 회로 장치 및 그의 제조 방법 | |
| KR960026747A (ko) | 반도체 집적회로장치의 제조방법 | |
| GB1298375A (en) | Method of making field effect transistors | |
| US4175317A (en) | Method for manufacturing junction type field-effect transistors | |
| KR880014644A (ko) | 반도체 집적 회로 장치 및 그 제조 방법 | |
| GB1389311A (en) | Semiconductor device manufacture | |
| GB1499389A (en) | Monolithic semiconductor mask programmable rom and a method for manufacturing the same | |
| JPH05299648A (ja) | Ｍｉｓ電界効果トランジスタ | |
| US3753806A (en) | Increasing field inversion voltage of metal oxide on silicon integrated circuits | |
| JP2511010B2 (ja) | 縦型ｍｏｓトランジスタの製造方法 | |
| JPS6110987B2 (enrdf_load_stackoverflow) | ||
| KR930001894B1 (ko) | 그루브를 가지는 전력트랜지스터 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |