GB1266002A - - Google Patents

Info

Publication number
GB1266002A
GB1266002A GB1266002DA GB1266002A GB 1266002 A GB1266002 A GB 1266002A GB 1266002D A GB1266002D A GB 1266002DA GB 1266002 A GB1266002 A GB 1266002A
Authority
GB
United Kingdom
Prior art keywords
hydrogen
march
semi
heated
gettering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1266002A publication Critical patent/GB1266002A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/6309—
    • H10P14/6322—
    • H10P14/6334—
    • H10P14/6529—
    • H10P14/69215—
    • H10P95/00—
    • H10W74/43—
    • H10P14/668—
    • H10P14/6682—
    • H10P14/69433—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/043—Dual dielectric
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/118—Oxide films
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Formation Of Insulating Films (AREA)
GB1266002D 1968-03-20 1969-03-03 Expired GB1266002A (cg-RX-API-DMAC10.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US71457768A 1968-03-20 1968-03-20

Publications (1)

Publication Number Publication Date
GB1266002A true GB1266002A (cg-RX-API-DMAC10.html) 1972-03-08

Family

ID=24870603

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1266002D Expired GB1266002A (cg-RX-API-DMAC10.html) 1968-03-20 1969-03-03
GB36441/71A Expired GB1267329A (en) 1968-03-20 1969-03-03 Method of treating semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB36441/71A Expired GB1267329A (en) 1968-03-20 1969-03-03 Method of treating semiconductor devices

Country Status (7)

Country Link
US (1) US3556879A (cg-RX-API-DMAC10.html)
DE (1) DE1913718C2 (cg-RX-API-DMAC10.html)
ES (1) ES364942A1 (cg-RX-API-DMAC10.html)
FR (1) FR2005220A1 (cg-RX-API-DMAC10.html)
GB (2) GB1266002A (cg-RX-API-DMAC10.html)
MY (2) MY7300405A (cg-RX-API-DMAC10.html)
NL (1) NL163369C (cg-RX-API-DMAC10.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4913909B1 (cg-RX-API-DMAC10.html) * 1970-05-04 1974-04-03
US4007297A (en) * 1971-09-20 1977-02-08 Rca Corporation Method of treating semiconductor device to improve its electrical characteristics
US3887726A (en) * 1973-06-29 1975-06-03 Ibm Method of chemical vapor deposition to provide silicon dioxide films with reduced surface state charge on semiconductor substrates
US4007294A (en) * 1974-06-06 1977-02-08 Rca Corporation Method of treating a layer of silicon dioxide
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
US4159917A (en) * 1977-05-27 1979-07-03 Eastman Kodak Company Method for use in the manufacture of semiconductor devices
DE2829983A1 (de) * 1978-07-07 1980-01-24 Siemens Ag Verfahren zum gettern von halbleiterbauelementen und integrierten halbleiterschaltkreisen
US4231809A (en) * 1979-05-25 1980-11-04 Bell Telephone Laboratories, Incorporated Method of removing impurity metals from semiconductor devices
US4716451A (en) * 1982-12-10 1987-12-29 Rca Corporation Semiconductor device with internal gettering region
US4536945A (en) * 1983-11-02 1985-08-27 National Semiconductor Corporation Process for producing CMOS structures with Schottky bipolar transistors
US5244843A (en) 1991-12-17 1993-09-14 Intel Corporation Process for forming a thin oxide layer
US5300187A (en) * 1992-09-03 1994-04-05 Motorola, Inc. Method of removing contaminants
EP0598438A1 (en) * 1992-11-17 1994-05-25 Koninklijke Philips Electronics N.V. Method for diffusing a dopant into a semiconductor
US5891809A (en) * 1995-09-29 1999-04-06 Intel Corporation Manufacturable dielectric formed using multiple oxidation and anneal steps
US5966623A (en) * 1995-10-25 1999-10-12 Eastman Kodak Company Metal impurity neutralization within semiconductors by fluorination
TWI456649B (zh) * 2011-10-27 2014-10-11 Atomic Energy Council 去除提純冶金級矽晶圓表面與內部金屬雜質之製備方法
US8685840B2 (en) * 2011-12-07 2014-04-01 Institute Of Nuclear Energy Research, Atomic Energy Council In-situ gettering method for removing metal impurities from the surface and interior of a upgraded metallurgical grade silicon wafer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3003900A (en) * 1957-11-12 1961-10-10 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
DE1186950C2 (de) * 1960-02-15 1975-10-02 Deutsche Itt Industries Gmbh, 7800 Freiburg Verfahren zum entfernen von unerwuenschten metallen aus einem einen pn-uebergang aufweisenden silicium-halbleiterkoerper
US3193419A (en) * 1960-12-30 1965-07-06 Texas Instruments Inc Outdiffusion method
GB997299A (en) * 1962-05-11 1965-07-07 Ferranti Ltd Improvements relating to the coating of semiconductor bodies with silicon dioxide
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching
US3183128A (en) * 1962-06-11 1965-05-11 Fairchild Camera Instr Co Method of making field-effect transistors
US3298880A (en) * 1962-08-24 1967-01-17 Hitachi Ltd Method of producing semiconductor devices
US3258359A (en) * 1963-04-08 1966-06-28 Siliconix Inc Semiconductor etch and oxidation process
US3342650A (en) * 1964-02-10 1967-09-19 Hitachi Ltd Method of making semiconductor devices by double masking

Also Published As

Publication number Publication date
NL163369B (nl) 1980-03-17
MY7500139A (en) 1975-12-31
DE1913718C2 (de) 1983-01-20
NL6904221A (cg-RX-API-DMAC10.html) 1969-09-23
ES364942A1 (es) 1971-02-16
FR2005220B1 (cg-RX-API-DMAC10.html) 1974-02-22
FR2005220A1 (fr) 1969-12-12
MY7300405A (en) 1973-12-31
GB1267329A (en) 1972-03-15
NL163369C (nl) 1980-08-15
US3556879A (en) 1971-01-19
DE1913718A1 (de) 1969-10-09

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PE20 Patent expired after termination of 20 years