GB1258657A - - Google Patents

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Publication number
GB1258657A
GB1258657A GB1258657DA GB1258657A GB 1258657 A GB1258657 A GB 1258657A GB 1258657D A GB1258657D A GB 1258657DA GB 1258657 A GB1258657 A GB 1258657A
Authority
GB
United Kingdom
Prior art keywords
semi
conductor
substrate
crystallizable
monocrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1258657A publication Critical patent/GB1258657A/en
Expired legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/903—Dendrite or web or cage technique
    • Y10S117/904—Laser beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/071—Heating, selective
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Thermal Sciences (AREA)
  • Electromagnetism (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB1258657D 1968-10-18 1969-07-08 Expired GB1258657A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US76866468A 1968-10-18 1968-10-18

Publications (1)

Publication Number Publication Date
GB1258657A true GB1258657A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1971-12-30

Family

ID=25083145

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1258657D Expired GB1258657A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1968-10-18 1969-07-08

Country Status (5)

Country Link
US (1) US3585088A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS4947630B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE1933690C3 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2020963B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1258657A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142346A (en) * 1983-06-20 1985-01-16 American Telephone & Telegraph Method of formation of layer of multiconstituent material

Families Citing this family (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5130437B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1970-03-25 1976-09-01
BE788894A (fr) * 1971-09-17 1973-01-02 Siemens Ag Couche electriquement conductrice sur base de forte resistivite, procede de fabrication et application d'une telle couchecomme resistance electrique
US4046618A (en) * 1972-12-29 1977-09-06 International Business Machines Corporation Method for preparing large single crystal thin films
US4020221A (en) * 1973-03-28 1977-04-26 Mitsubishi Denki Kabushiki Kaisha Thin film device
JPS544826B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1974-06-11 1979-03-10
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4059461A (en) * 1975-12-10 1977-11-22 Massachusetts Institute Of Technology Method for improving the crystallinity of semiconductor films by laser beam scanning and the products thereof
US4152535A (en) * 1976-07-06 1979-05-01 The Boeing Company Continuous process for fabricating solar cells and the product produced thereby
US4137100A (en) * 1977-10-26 1979-01-30 Western Electric Company Forming isolation and device regions due to enhanced diffusion of impurities in semiconductor material by laser
DE2861418D1 (en) * 1977-11-15 1982-01-28 Ici Plc A method for the preparation of thin photoconductive films and of solar cells employing said thin photoconductive films
US4154625A (en) * 1977-11-16 1979-05-15 Bell Telephone Laboratories, Incorporated Annealing of uncapped compound semiconductor materials by pulsed energy deposition
US4240843A (en) * 1978-05-23 1980-12-23 Western Electric Company, Inc. Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
US4179310A (en) * 1978-07-03 1979-12-18 National Semiconductor Corporation Laser trim protection process
US4147563A (en) * 1978-08-09 1979-04-03 The United States Of America As Represented By The United States Department Of Energy Method for forming p-n junctions and solar-cells by laser-beam processing
US4155779A (en) * 1978-08-21 1979-05-22 Bell Telephone Laboratories, Incorporated Control techniques for annealing semiconductors
DE2837750A1 (de) * 1978-08-30 1980-03-13 Philips Patentverwaltung Verfahhren zum herstellen von halbleiterbauelementen
US4214918A (en) * 1978-10-12 1980-07-29 Stanford University Method of forming polycrystalline semiconductor interconnections, resistors and contacts by applying radiation beam
US4198246A (en) * 1978-11-27 1980-04-15 Rca Corporation Pulsed laser irradiation for reducing resistivity of a doped polycrystalline silicon film
GB2056769B (en) * 1978-11-28 1983-03-30 Western Electric Co Dual wavelength laser annealing of material
JPS55115341A (en) * 1979-02-28 1980-09-05 Chiyou Lsi Gijutsu Kenkyu Kumiai Manufacture of semiconductor device
US4234358A (en) * 1979-04-05 1980-11-18 Western Electric Company, Inc. Patterned epitaxial regrowth using overlapping pulsed irradiation
US4272880A (en) * 1979-04-20 1981-06-16 Intel Corporation MOS/SOS Process
US5122223A (en) * 1979-05-29 1992-06-16 Massachusetts Institute Of Technology Graphoepitaxy using energy beams
US4402787A (en) * 1979-05-31 1983-09-06 Ngk Insulators, Ltd. Method for producing a single crystal
DE2924920A1 (de) * 1979-06-20 1981-01-22 Siemens Ag Verfahren zur herstellung grobkristalliner oder einkristalliner metalloder legierungsschichten
US4341569A (en) * 1979-07-24 1982-07-27 Hughes Aircraft Company Semiconductor on insulator laser process
JPS56500912A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1979-07-24 1981-07-02
JPS5640275A (en) * 1979-09-12 1981-04-16 Hitachi Ltd Preparation of semiconductor device
US4309225A (en) * 1979-09-13 1982-01-05 Massachusetts Institute Of Technology Method of crystallizing amorphous material with a moving energy beam
US4257827A (en) * 1979-11-13 1981-03-24 International Business Machines Corporation High efficiency gettering in silicon through localized superheated melt formation
EP0028739B1 (de) * 1979-11-13 1985-03-27 International Business Machines Corporation Verfahren zum Bilden der Emitterzone eines Transistors
US4269631A (en) * 1980-01-14 1981-05-26 International Business Machines Corporation Selective epitaxy method using laser annealing for making filamentary transistors
US4345967A (en) * 1980-03-04 1982-08-24 Cook Melvin S Method of producing thin single-crystal sheets
DE3003285A1 (de) * 1980-01-30 1981-08-06 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen niederohmiger, einkristalliner metall- oder legierungsschichten auf substraten
JPS5713777A (en) 1980-06-30 1982-01-23 Shunpei Yamazaki Semiconductor device and manufacture thereof
US5091334A (en) * 1980-03-03 1992-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US4381201A (en) * 1980-03-11 1983-04-26 Fujitsu Limited Method for production of semiconductor devices
JPS56145198A (en) * 1980-04-04 1981-11-11 Hitachi Ltd Forming method of single crystal silicon membrane and device therefor
JPS56155100A (en) * 1980-05-02 1981-12-01 Ngk Insulators Ltd Production of single crystal of ferrite
US4323417A (en) * 1980-05-06 1982-04-06 Texas Instruments Incorporated Method of producing monocrystal on insulator
US4284659A (en) * 1980-05-12 1981-08-18 Bell Telephone Laboratories Insulation layer reflow
US4308078A (en) * 1980-06-06 1981-12-29 Cook Melvin S Method of producing single-crystal semiconductor films by laser treatment
US4379020A (en) * 1980-06-16 1983-04-05 Massachusetts Institute Of Technology Polycrystalline semiconductor processing
US5859443A (en) * 1980-06-30 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6900463B1 (en) 1980-06-30 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US5262350A (en) * 1980-06-30 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Forming a non single crystal semiconductor layer by using an electric current
DE3028111A1 (de) * 1980-07-24 1982-02-18 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement und seine verwendung fuer statische 6-transistorzelle
US4803528A (en) * 1980-07-28 1989-02-07 General Electric Company Insulating film having electrically conducting portions
DE3166961D1 (en) * 1980-08-05 1984-12-06 Belge Etat Process for the manufacture of polycrystalline films of semiconductors formed by compounds or elements, and films thus obtained
JPS5734331A (en) * 1980-08-11 1982-02-24 Toshiba Corp Manufacture of semiconductor device
US4325777A (en) * 1980-08-14 1982-04-20 Olin Corporation Method and apparatus for reforming an improved strip of material from a starter strip of material
US4330363A (en) * 1980-08-28 1982-05-18 Xerox Corporation Thermal gradient control for enhanced laser induced crystallization of predefined semiconductor areas
DE3164887D1 (en) * 1980-09-18 1984-08-23 Belge Etat Process for crystallising films, and films thus obtained
US4303463A (en) * 1980-09-29 1981-12-01 Cook Melvin S Method of peeling thin films using directional heat flow
US4410392A (en) * 1980-10-06 1983-10-18 Olin Corporation Process for restructuring thin strip semi-conductor material
US4400715A (en) * 1980-11-19 1983-08-23 International Business Machines Corporation Thin film semiconductor device and method for manufacture
JPS5792591A (en) * 1980-11-28 1982-06-09 Ngk Insulators Ltd Production of single crystal
DE3279842D1 (en) * 1981-04-16 1989-08-31 Massachusetts Inst Technology Lateral epitaxial growth by seeded solidification
US4371421A (en) * 1981-04-16 1983-02-01 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPS57192081A (en) * 1981-05-19 1982-11-26 Ibm Field effect transistor unit
US4448632A (en) * 1981-05-25 1984-05-15 Mitsubishi Denki Kabushiki Kaisha Method of fabricating semiconductor devices
US4494300A (en) * 1981-06-30 1985-01-22 International Business Machines, Inc. Process for forming transistors using silicon ribbons as substrates
US4388145A (en) * 1981-10-29 1983-06-14 Xerox Corporation Laser annealing for growth of single crystal semiconductor areas
US4565599A (en) * 1981-12-21 1986-01-21 Massachusetts Institute Of Technology Graphoepitaxy by encapsulation
US4396456A (en) * 1981-12-21 1983-08-02 Cook Melvin S Method of peeling epilayers
US4450041A (en) * 1982-06-21 1984-05-22 The United States Of America As Represented By The Secretary Of The Navy Chemical etching of transformed structures
US4477308A (en) * 1982-09-30 1984-10-16 At&T Bell Laboratories Heteroepitaxy of multiconstituent material by means of a _template layer
JPS59205711A (ja) * 1983-03-31 1984-11-21 Fujitsu Ltd 半導体装置の製造方法
US4476150A (en) * 1983-05-20 1984-10-09 The United States Of America As Represented By The Secretary Of The Army Process of and apparatus for laser annealing of film-like surface layers of chemical vapor deposited silicon carbide and silicon nitride
US4549913A (en) * 1984-01-27 1985-10-29 Sony Corporation Wafer construction for making single-crystal semiconductor device
US4555300A (en) * 1984-02-21 1985-11-26 North American Philips Corporation Method for producing single crystal layers on insulators
US4602422A (en) * 1984-06-18 1986-07-29 Khanh Dinh Flash compression process for making photovoltaic cells
US5363799A (en) * 1987-08-08 1994-11-15 Canon Kabushiki Kaisha Method for growth of crystal
DE3730644A1 (de) * 1987-09-11 1989-03-30 Baeuerle Dieter Verfahren zur vorgegeben strukturierten abscheidung von mikrostrukturen mit laserlicht
DE3834963A1 (de) * 1988-01-27 1989-08-10 Siemens Ag Verfahren zur epitaktischen herstellung einer schicht aus einem metalloxidischen supraleitermaterial mit hoher sprungtemperatur
US5238879A (en) * 1988-03-24 1993-08-24 Siemens Aktiengesellschaft Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells
US5190613A (en) * 1988-10-02 1993-03-02 Canon Kabushiki Kaisha Method for forming crystals
JP2858434B2 (ja) * 1989-03-31 1999-02-17 キヤノン株式会社 結晶の形成方法および結晶物品
US5597411A (en) * 1991-02-19 1997-01-28 Energy Conversion Devices, Inc. Method of forming a single crystal material
US6562672B2 (en) 1991-03-18 2003-05-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
US5373803A (en) * 1991-10-04 1994-12-20 Sony Corporation Method of epitaxial growth of semiconductor
US5338388A (en) * 1992-05-04 1994-08-16 Mitsubishi Denki Kabushiki Kaisha Method of forming single-crystal semiconductor films
US5290368A (en) * 1992-02-28 1994-03-01 Ingersoll-Rand Company Process for producing crack-free nitride-hardened surface on titanium by laser beams
JP3573811B2 (ja) * 1994-12-19 2004-10-06 株式会社半導体エネルギー研究所 線状レーザー光の照射方法
TW305063B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1995-02-02 1997-05-11 Handotai Energy Kenkyusho Kk
GB9819338D0 (en) * 1998-09-04 1998-10-28 Philips Electronics Nv Laser crystallisation of thin films
JP3542014B2 (ja) * 1998-09-21 2004-07-14 セントラル硝子株式会社 単結晶または多結晶含有非晶質材料の作製方法及びその非晶質材料
DE10005484B4 (de) * 2000-02-08 2004-07-29 Rwe Schott Solar Gmbh Verfahren zum Ausbilden einer dünnen kristallisierten Schicht
US6847006B2 (en) * 2001-08-10 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Laser annealing apparatus and semiconductor device manufacturing method
DE10217876A1 (de) * 2002-04-22 2003-11-06 Infineon Technologies Ag Verfahren zur Herstellung dünner metallhaltiger Schichten mit geringem elektrischen Widerstand
US7294874B2 (en) * 2003-08-15 2007-11-13 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, method for manufacturing a semiconductor device, and a semiconductor device
JP7085194B2 (ja) 2018-05-17 2022-06-16 大学共同利用機関法人自然科学研究機構 物質生成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2142346A (en) * 1983-06-20 1985-01-16 American Telephone & Telegraph Method of formation of layer of multiconstituent material

Also Published As

Publication number Publication date
US3585088A (en) 1971-06-15
FR2020963A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1970-07-17
DE1933690B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-06-28
DE1933690C3 (de) 1980-03-06
DE1933690A1 (de) 1970-04-30
JPS4947630B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1974-12-17
FR2020963B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1973-03-16

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