GB1257766A - - Google Patents

Info

Publication number
GB1257766A
GB1257766A GB1257766DA GB1257766A GB 1257766 A GB1257766 A GB 1257766A GB 1257766D A GB1257766D A GB 1257766DA GB 1257766 A GB1257766 A GB 1257766A
Authority
GB
United Kingdom
Prior art keywords
anode
sputtering apparatus
cathode
sputtering
sputtered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1257766A publication Critical patent/GB1257766A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
GB1257766D 1969-09-10 1970-08-12 Expired GB1257766A (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85676269A 1969-09-10 1969-09-10

Publications (1)

Publication Number Publication Date
GB1257766A true GB1257766A (enrdf_load_stackoverflow) 1971-12-22

Family

ID=25324445

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1257766D Expired GB1257766A (enrdf_load_stackoverflow) 1969-09-10 1970-08-12

Country Status (5)

Country Link
US (1) US3669871A (enrdf_load_stackoverflow)
JP (1) JPS4817987B1 (enrdf_load_stackoverflow)
DE (1) DE2042023A1 (enrdf_load_stackoverflow)
FR (1) FR2060928A5 (enrdf_load_stackoverflow)
GB (1) GB1257766A (enrdf_load_stackoverflow)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026787A (en) * 1974-01-25 1977-05-31 Coulter Information Systems, Inc. Thin film deposition apparatus using segmented target means
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films
US4096055A (en) * 1976-12-29 1978-06-20 Johnson Andrew G Electron microscopy coating apparatus and methods
JPS54144891U (enrdf_load_stackoverflow) * 1978-03-31 1979-10-08
US4201654A (en) * 1978-10-06 1980-05-06 The United States Of America As Represented By The Secretary Of The Air Force Anode assisted sputter etch and deposition apparatus
GB8334369D0 (en) * 1983-12-23 1984-02-01 Ion Tech Ltd Sputter deposition of alloys & c
US4597847A (en) * 1984-10-09 1986-07-01 Iodep, Inc. Non-magnetic sputtering target
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
US4610774A (en) * 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
WO1992013115A1 (en) * 1991-01-28 1992-08-06 Materials Research Corporation Target for cathode sputtering
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6277253B1 (en) * 1999-10-06 2001-08-21 Applied Materials, Inc. External coating of tungsten or tantalum or other refractory metal on IMP coils
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US7244344B2 (en) 2005-02-03 2007-07-17 Applied Materials, Inc. Physical vapor deposition plasma reactor with VHF source power applied through the workpiece
US8821701B2 (en) 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering
NL130959C (enrdf_load_stackoverflow) * 1965-12-17
US3483114A (en) * 1967-05-01 1969-12-09 Victory Eng Corp Rf sputtering apparatus including a wave reflector positioned behind the target

Also Published As

Publication number Publication date
US3669871A (en) 1972-06-13
FR2060928A5 (enrdf_load_stackoverflow) 1971-06-18
JPS4817987B1 (enrdf_load_stackoverflow) 1973-06-02
DE2042023A1 (de) 1971-03-11

Similar Documents

Publication Publication Date Title
GB1257766A (enrdf_load_stackoverflow)
GB1209968A (en) Rf sputtering method and system
GB1371462A (en) Apparatus for coating workpieces
JPS52116896A (en) Electrode plate and its preparation
GB1350720A (en) Apparatus for sputtering
GB1301653A (enrdf_load_stackoverflow)
GB1391842A (en) Apparatus for coating substrates by cathode sputtering and for cleaning by ion bombardment in the same vacuum vessel
GB1358411A (en) Sputtering
GB1119277A (en) Improvements in or relating to sputtering apparatus
GB903587A (en) Improved cathode ray tube
GB1491839A (en) Ion beam apparatus
GB1299945A (en) Sputtering apparatus
GB1243262A (en) Improvements in or relating to neutron targets
GB1224848A (en) Improvements in or relating to electrodes for vacuum switches
GB602305A (en) Improvements in and relating to electrode structure for x-ray generators
JPS5558370A (en) Electrode for sputtering target
JPS5399082A (en) High frequency sputtering apparatus
GB1326570A (en) Sputter coating apparatus having target electrode structure
JPS5677380A (en) Sputtering apparatus
JPS5418679A (en) Electron impact type ion source device
GB879879A (en) Improvements in or relating to single cavity magnetrons
AU212480B2 (en) Cathode ray beam deflection circuit arrangements
RISHBETH Ionospheric evidence for composition changes(Seasonal and annual variations of electron density in ionospheric F layer interpreted as changes in production rate and ionization loss caused by atmospheric composition variations from neutral atmosphere)
AU2276756A (en) Cathode ray beam deflection circuit arrangements
JPS5211785A (en) Schottky barrier type solid state element

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee