JPS4817987B1 - - Google Patents

Info

Publication number
JPS4817987B1
JPS4817987B1 JP45072864A JP7286470A JPS4817987B1 JP S4817987 B1 JPS4817987 B1 JP S4817987B1 JP 45072864 A JP45072864 A JP 45072864A JP 7286470 A JP7286470 A JP 7286470A JP S4817987 B1 JPS4817987 B1 JP S4817987B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP45072864A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4817987B1 publication Critical patent/JPS4817987B1/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • C23C14/3478—Introduction of auxiliary energy into the plasma using electrons, e.g. triode sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
JP45072864A 1969-09-10 1970-08-21 Pending JPS4817987B1 (enrdf_load_stackoverflow)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US85676269A 1969-09-10 1969-09-10

Publications (1)

Publication Number Publication Date
JPS4817987B1 true JPS4817987B1 (enrdf_load_stackoverflow) 1973-06-02

Family

ID=25324445

Family Applications (1)

Application Number Title Priority Date Filing Date
JP45072864A Pending JPS4817987B1 (enrdf_load_stackoverflow) 1969-09-10 1970-08-21

Country Status (5)

Country Link
US (1) US3669871A (enrdf_load_stackoverflow)
JP (1) JPS4817987B1 (enrdf_load_stackoverflow)
DE (1) DE2042023A1 (enrdf_load_stackoverflow)
FR (1) FR2060928A5 (enrdf_load_stackoverflow)
GB (1) GB1257766A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144891U (enrdf_load_stackoverflow) * 1978-03-31 1979-10-08

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4026787A (en) * 1974-01-25 1977-05-31 Coulter Information Systems, Inc. Thin film deposition apparatus using segmented target means
US3988232A (en) * 1974-06-25 1976-10-26 Matsushita Electric Industrial Co., Ltd. Method of making crystal films
US4096055A (en) * 1976-12-29 1978-06-20 Johnson Andrew G Electron microscopy coating apparatus and methods
US4201654A (en) * 1978-10-06 1980-05-06 The United States Of America As Represented By The Secretary Of The Air Force Anode assisted sputter etch and deposition apparatus
GB8334369D0 (en) * 1983-12-23 1984-02-01 Ion Tech Ltd Sputter deposition of alloys & c
US4597847A (en) * 1984-10-09 1986-07-01 Iodep, Inc. Non-magnetic sputtering target
US5215639A (en) * 1984-10-09 1993-06-01 Genus, Inc. Composite sputtering target structures and process for producing such structures
US4610774A (en) * 1984-11-14 1986-09-09 Hitachi, Ltd. Target for sputtering
US4957605A (en) * 1989-04-17 1990-09-18 Materials Research Corporation Method and apparatus for sputter coating stepped wafers
US6024843A (en) * 1989-05-22 2000-02-15 Novellus Systems, Inc. Sputtering apparatus with a rotating magnet array having a geometry for specified target erosion profile
US5196400A (en) * 1990-08-17 1993-03-23 At&T Bell Laboratories High temperature superconductor deposition by sputtering
JPH06505304A (ja) * 1991-01-28 1994-06-16 マティリアルズ　リサーチ　コーポレイション 陰極スパッタ用ターゲット
CA2065581C (en) * 1991-04-22 2002-03-12 Andal Corp. Plasma enhancement apparatus and method for physical vapor deposition
US5556525A (en) * 1994-09-30 1996-09-17 Advanced Micro Devices, Inc. PVD sputter system having nonplanar target configuration and methods for operating same
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US5985115A (en) * 1997-04-11 1999-11-16 Novellus Systems, Inc. Internally cooled target assembly for magnetron sputtering
US6217716B1 (en) 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
US6277253B1 (en) * 1999-10-06 2001-08-21 Applied Materials, Inc. External coating of tungsten or tantalum or other refractory metal on IMP coils
US6699375B1 (en) 2000-06-29 2004-03-02 Applied Materials, Inc. Method of extending process kit consumable recycling life
US7820020B2 (en) * 2005-02-03 2010-10-26 Applied Materials, Inc. Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas
US8821701B2 (en) 2010-06-02 2014-09-02 Clifton Higdon Ion beam sputter target and method of manufacture

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3250694A (en) * 1962-10-17 1966-05-10 Ibm Apparatus for coating articles by cathode sputtering
FR1502647A (enrdf_load_stackoverflow) * 1965-12-17 1968-02-07
US3483114A (en) * 1967-05-01 1969-12-09 Victory Eng Corp Rf sputtering apparatus including a wave reflector positioned behind the target

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54144891U (enrdf_load_stackoverflow) * 1978-03-31 1979-10-08

Also Published As

Publication number Publication date
DE2042023A1 (de) 1971-03-11
US3669871A (en) 1972-06-13
FR2060928A5 (enrdf_load_stackoverflow) 1971-06-18
GB1257766A (enrdf_load_stackoverflow) 1971-12-22

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