GB1250201A - - Google Patents

Info

Publication number
GB1250201A
GB1250201A GB1250201DA GB1250201A GB 1250201 A GB1250201 A GB 1250201A GB 1250201D A GB1250201D A GB 1250201DA GB 1250201 A GB1250201 A GB 1250201A
Authority
GB
United Kingdom
Prior art keywords
vapour
deposited
nov
deposits
nucleating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1250201A publication Critical patent/GB1250201A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB1250201D 1967-11-22 1968-11-05 Expired GB1250201A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1636267A CH490515A (de) 1967-11-22 1967-11-22 Verfahren zur Erzeugung von kristallinen Abscheidungen in Form eines Musters auf einer elektrisch isolierenden amorphen, poly- oder einkristallinen Unterlage

Publications (1)

Publication Number Publication Date
GB1250201A true GB1250201A (de) 1971-10-20

Family

ID=4416688

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1250201D Expired GB1250201A (de) 1967-11-22 1968-11-05

Country Status (5)

Country Link
CH (1) CH490515A (de)
DE (1) DE1806578A1 (de)
FR (1) FR1592287A (de)
GB (1) GB1250201A (de)
NL (1) NL6816693A (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
FR2588416A1 (fr) * 1985-10-07 1987-04-10 Canon Kk Procede de formation selective d'un film depose
FR2603738A1 (fr) * 1986-04-28 1988-03-11 Canon Kk Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2572219B1 (fr) * 1984-10-23 1987-05-29 Efcis Procede de fabrication de circuits integres sur substrat isolant
JPH0732124B2 (ja) * 1986-01-24 1995-04-10 シャープ株式会社 半導体装置の製造方法
US5427630A (en) * 1994-05-09 1995-06-27 International Business Machines Corporation Mask material for low temperature selective growth of silicon or silicon alloys

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2129019A (en) * 1982-09-30 1984-05-10 Western Electric Co Method of forming a heterostructure comprising a heteroepitaxial multiconstituent material
FR2588416A1 (fr) * 1985-10-07 1987-04-10 Canon Kk Procede de formation selective d'un film depose
GB2183090A (en) * 1985-10-07 1987-05-28 Canon Kk Method for selective formation of deposited film
GB2183090B (en) * 1985-10-07 1989-09-13 Canon Kk Method for selective formation of deposited film
FR2603738A1 (fr) * 1986-04-28 1988-03-11 Canon Kk Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique

Also Published As

Publication number Publication date
CH490515A (de) 1970-05-15
FR1592287A (de) 1970-05-11
DE1806578A1 (de) 1969-06-12
NL6816693A (de) 1969-05-27

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Legal Events

Date Code Title Description
CSNS Application of which complete specification have been accepted and published, but patent is not sealed