FR2603738A1 - Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique - Google Patents

Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique

Info

Publication number
FR2603738A1
FR2603738A1 FR8705920A FR8705920A FR2603738A1 FR 2603738 A1 FR2603738 A1 FR 2603738A1 FR 8705920 A FR8705920 A FR 8705920A FR 8705920 A FR8705920 A FR 8705920A FR 2603738 A1 FR2603738 A1 FR 2603738A1
Authority
FR
France
Prior art keywords
forming
wiring
electronic
multilayer structure
materials
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8705920A
Other languages
English (en)
Other versions
FR2603738B1 (fr
Inventor
Takao Yonehara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2603738A1 publication Critical patent/FR2603738A1/fr
Application granted granted Critical
Publication of FR2603738B1 publication Critical patent/FR2603738B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

L'INVENTION CONCERNE UN PROCEDE POUR FORMER UNE STRUCTURE MULTICOUCHE PAR EGALISATION D'UNE SURFACE DEPOSEE INEGALE DE CETTE STRUCTURE. ELLE CONSISTE A FORMER, AVEC DES MATIERES DE TYPES DIFFERENTS, DES PARTIES INFERIEURE ET SUPERIEURE SUR LA SURFACE DEPOSEE, ET A DEPOSER SELECTIVEMENT UNE MATIERE 15 SUR LES PARTIES INFERIEURES SEULES EN UTILISANT LA DIFFERENCE DE DENSITE DE NUCLEATION ENTRE LES MATIERES DEPOSEES, DU FAIT DES TYPES DE MATIERES DE LA SURFACE DEPOSEE, DE FACON QUE LA SURFACE FINALE SOIT EGALISEE. DOMAINE D'APPLICATION : PRODUCTION DE CIRCUITS INTEGRES A SEMICONDUCTEURS, DE CIRCUITS INTEGRES OPTIQUES, ETC.
FR8705920A 1986-04-28 1987-04-27 Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique Expired - Lifetime FR2603738B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61096866A JPH0828357B2 (ja) 1986-04-28 1986-04-28 多層構造の形成方法

Publications (2)

Publication Number Publication Date
FR2603738A1 true FR2603738A1 (fr) 1988-03-11
FR2603738B1 FR2603738B1 (fr) 1990-09-07

Family

ID=14176361

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8705920A Expired - Lifetime FR2603738B1 (fr) 1986-04-28 1987-04-27 Procede de formation d'une structure multicouche pour le cablage dans des domaines electronique ou optique

Country Status (4)

Country Link
JP (1) JPH0828357B2 (fr)
DE (1) DE3713992A1 (fr)
FR (1) FR2603738B1 (fr)
GB (1) GB2189935B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0307109A1 (fr) * 1987-08-24 1989-03-15 Canon Kabushiki Kaisha Méthode pour former un cristal semi-conducteur et cristal semi-conducteur produit par cette méthode
GB2216336A (en) * 1988-03-30 1989-10-04 Philips Nv Forming insulating layers on substrates
US5593919A (en) * 1995-09-05 1997-01-14 Motorola Inc. Process for forming a semiconductor device including conductive members

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403439A (en) * 1966-04-29 1968-10-01 Texas Instruments Inc Electrical isolation of circuit components of monolithic integrated circuits
GB1250201A (fr) * 1967-11-22 1971-10-20
GB1261789A (en) * 1963-01-23 1972-01-26 Rca Corp Epitaxial gallium arsenide diodes
FR2588416A1 (fr) * 1985-10-07 1987-04-10 Canon Kk Procede de formation selective d'un film depose

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4948286A (fr) * 1972-09-08 1974-05-10
JPS58200557A (ja) * 1982-05-18 1983-11-22 Nec Corp 多層配線の形成方法
JPS628543A (ja) * 1985-07-05 1987-01-16 Fujitsu Ltd 燐珪酸ガラスの選択成長方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1261789A (en) * 1963-01-23 1972-01-26 Rca Corp Epitaxial gallium arsenide diodes
US3403439A (en) * 1966-04-29 1968-10-01 Texas Instruments Inc Electrical isolation of circuit components of monolithic integrated circuits
GB1250201A (fr) * 1967-11-22 1971-10-20
FR2588416A1 (fr) * 1985-10-07 1987-04-10 Canon Kk Procede de formation selective d'un film depose

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSURE BULLETIN, vol. 16, no. 9, février 1974, page 2871, Armonk, NY, US; A. GAIND et al.: "Doped polysilicon isolation process" *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, vol. 130, no. 7, juillet 1983, pages 1571-1580, Manchester, US; L. JASTRZEBSKI et al.: "Growth process of silicon over SiO2 BY CVD: epitaxial lateral overgrowth technique" *
PHILIPS TECHNICAL REVIEW, vol. 41, no. 2, 1983/84, pages 60-69, Eindhoven, NL; J. BLOEM et al.: "Nucleation and growth of silicon films by chemical vapour deposition" *

Also Published As

Publication number Publication date
JPS62254447A (ja) 1987-11-06
DE3713992C2 (fr) 1990-10-18
DE3713992A1 (de) 1987-10-29
GB2189935A (en) 1987-11-04
GB8709569D0 (en) 1987-05-28
GB2189935B (en) 1990-03-14
JPH0828357B2 (ja) 1996-03-21
FR2603738B1 (fr) 1990-09-07

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Legal Events

Date Code Title Description
ST Notification of lapse