GB1230879A - - Google Patents
Info
- Publication number
- GB1230879A GB1230879A GB1230879DA GB1230879A GB 1230879 A GB1230879 A GB 1230879A GB 1230879D A GB1230879D A GB 1230879DA GB 1230879 A GB1230879 A GB 1230879A
- Authority
- GB
- United Kingdom
- Prior art keywords
- emitter
- transistor
- forward biased
- transistors
- utilized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/10—Integrated device layouts
- H10D89/105—Integrated device layouts adapted for thermal considerations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Automation & Control Theory (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Nonlinear Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electronic Switches (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1967D0054814 DE1589707B2 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z Diodenanord nung |
DE19671589707 DE1589707C3 (de) | 1967-12-09 | 1967-12-09 | Temperaturkompensierte Z-Diodenanordnung |
DE1639173A DE1639173C3 (de) | 1967-12-09 | 1968-01-20 | Temperaturkompensierte Z-Diodenanordnung |
DE1639173 | 1968-01-20 | ||
DE1764251A DE1764251C3 (de) | 1967-12-09 | 1968-05-02 | Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1230879A true GB1230879A (enrdf_load_stackoverflow) | 1971-05-05 |
Family
ID=27509903
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1230879D Expired GB1230879A (enrdf_load_stackoverflow) | 1967-12-09 | 1968-12-05 | |
GB2563/69A Expired GB1245531A (en) | 1967-12-09 | 1969-01-16 | Temperature compensated zener diode |
GB20659/69A Expired GB1245668A (en) | 1967-12-09 | 1969-04-23 | Temperature compensated zener diode |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB2563/69A Expired GB1245531A (en) | 1967-12-09 | 1969-01-16 | Temperature compensated zener diode |
GB20659/69A Expired GB1245668A (en) | 1967-12-09 | 1969-04-23 | Temperature compensated zener diode |
Country Status (5)
Country | Link |
---|---|
US (1) | US3567965A (enrdf_load_stackoverflow) |
DE (3) | DE1589707B2 (enrdf_load_stackoverflow) |
FR (1) | FR1599179A (enrdf_load_stackoverflow) |
GB (3) | GB1230879A (enrdf_load_stackoverflow) |
NL (1) | NL6817648A (enrdf_load_stackoverflow) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE756061A (fr) * | 1969-09-11 | 1971-03-11 | Philips Nv | Dispositif semi-conducteur |
US3703651A (en) * | 1971-07-12 | 1972-11-21 | Kollmorgen Corp | Temperature-controlled integrated circuits |
US3723776A (en) * | 1971-12-27 | 1973-03-27 | Us Navy | Temperature compensated zener diode circuit |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
JPS5240017B2 (enrdf_load_stackoverflow) * | 1972-10-16 | 1977-10-08 | ||
JPS5330205Y2 (enrdf_load_stackoverflow) * | 1972-11-13 | 1978-07-28 | ||
US3875539A (en) * | 1973-11-26 | 1975-04-01 | Amp Inc | High voltage ripple reduction circuit |
DE2452107C3 (de) * | 1974-11-02 | 1979-08-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperaturkompensierte Z-Diodenanordnung |
DE2532847C2 (de) * | 1975-07-23 | 1982-08-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrierte Schaltung mit Zenerdiodenkennlinie |
US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
DE2645182C2 (de) * | 1976-10-07 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperaturkompensierte Z-Diodenanordnung, Betriebsschaltung hierfür und Verwendung der Anordnung mit dieser Betriebsschaltung |
US4311926A (en) * | 1977-08-11 | 1982-01-19 | Gte Laboratories Incorporated | Emitter coupled logic programmable logic arrays |
US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
JPS6048765B2 (ja) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | 定電圧半導体集積回路 |
US4319257A (en) * | 1980-01-16 | 1982-03-09 | Harris Corporation | Low thermal coefficient semiconductor device |
DE3416404A1 (de) * | 1984-05-04 | 1985-11-07 | Robert Bosch Gmbh, 7000 Stuttgart | Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
DE19526902A1 (de) * | 1995-07-22 | 1997-01-23 | Bosch Gmbh Robert | Monolithisch integrierte planare Halbleiteranordnung |
-
1967
- 1967-12-09 DE DE1967D0054814 patent/DE1589707B2/de active Granted
-
1968
- 1968-01-20 DE DE1639173A patent/DE1639173C3/de not_active Expired
- 1968-05-02 DE DE1764251A patent/DE1764251C3/de not_active Expired
- 1968-12-05 US US781358A patent/US3567965A/en not_active Expired - Lifetime
- 1968-12-05 GB GB1230879D patent/GB1230879A/en not_active Expired
- 1968-12-09 FR FR1599179D patent/FR1599179A/fr not_active Expired
- 1968-12-09 NL NL6817648A patent/NL6817648A/xx unknown
-
1969
- 1969-01-16 GB GB2563/69A patent/GB1245531A/en not_active Expired
- 1969-04-23 GB GB20659/69A patent/GB1245668A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3567965A (en) | 1971-03-02 |
NL6817648A (enrdf_load_stackoverflow) | 1969-06-11 |
FR1599179A (enrdf_load_stackoverflow) | 1970-07-15 |
DE1764251B2 (enrdf_load_stackoverflow) | 1979-09-27 |
DE1589707B2 (de) | 1971-02-04 |
DE1639173C3 (de) | 1979-03-15 |
DE1589707A1 (de) | 1970-05-06 |
DE1764251C3 (de) | 1980-06-19 |
GB1245531A (en) | 1971-09-08 |
GB1245668A (en) | 1971-09-08 |
DE1639173A1 (de) | 1971-04-08 |
DE1764251A1 (de) | 1972-05-04 |
DE1639173B2 (de) | 1971-09-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PS | Patent sealed [section 19, patents act 1949] | ||
746 | Register noted 'licences of right' (sect. 46/1977) | ||
PCNP | Patent ceased through non-payment of renewal fee |