DE1639173B2 - Temperaturkompensierte z diodenanordnung - Google Patents

Temperaturkompensierte z diodenanordnung

Info

Publication number
DE1639173B2
DE1639173B2 DE1968D0055161 DED0055161A DE1639173B2 DE 1639173 B2 DE1639173 B2 DE 1639173B2 DE 1968D0055161 DE1968D0055161 DE 1968D0055161 DE D0055161 A DED0055161 A DE D0055161A DE 1639173 B2 DE1639173 B2 DE 1639173B2
Authority
DE
Germany
Prior art keywords
temperature compensated
diode arrangement
diode
arrangement
compensated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1968D0055161
Other languages
English (en)
Other versions
DE1639173A1 (de
DE1639173C3 (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589707 external-priority patent/DE1589707C3/de
Priority to DE1967D0054814 priority Critical patent/DE1589707B2/de
Application filed filed Critical
Priority to DE1639173A priority patent/DE1639173C3/de
Priority to DE1764251A priority patent/DE1764251C3/de
Priority to US781358A priority patent/US3567965A/en
Priority to GB1230879D priority patent/GB1230879A/en
Priority to NL6817648A priority patent/NL6817648A/xx
Priority to FR1599179D priority patent/FR1599179A/fr
Priority to GB2563/69A priority patent/GB1245531A/en
Priority to GB20659/69A priority patent/GB1245668A/en
Publication of DE1639173A1 publication Critical patent/DE1639173A1/de
Publication of DE1639173B2 publication Critical patent/DE1639173B2/de
Publication of DE1639173C3 publication Critical patent/DE1639173C3/de
Application granted granted Critical
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE1639173A 1967-12-09 1968-01-20 Temperaturkompensierte Z-Diodenanordnung Expired DE1639173C3 (de)

Priority Applications (9)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z Diodenanord nung
DE1639173A DE1639173C3 (de) 1967-12-09 1968-01-20 Temperaturkompensierte Z-Diodenanordnung
DE1764251A DE1764251C3 (de) 1967-12-09 1968-05-02 Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung
US781358A US3567965A (en) 1967-12-09 1968-12-05 Temperature compensated zener diode
GB1230879D GB1230879A (de) 1967-12-09 1968-12-05
FR1599179D FR1599179A (de) 1967-12-09 1968-12-09
NL6817648A NL6817648A (de) 1967-12-09 1968-12-09
GB2563/69A GB1245531A (en) 1967-12-09 1969-01-16 Temperature compensated zener diode
GB20659/69A GB1245668A (en) 1967-12-09 1969-04-23 Temperature compensated zener diode

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z Diodenanord nung
DE19671589707 DE1589707C3 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z-Diodenanordnung
DE1639173 1968-01-20
DE1639173A DE1639173C3 (de) 1967-12-09 1968-01-20 Temperaturkompensierte Z-Diodenanordnung
DE1764251A DE1764251C3 (de) 1967-12-09 1968-05-02 Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung

Publications (3)

Publication Number Publication Date
DE1639173A1 DE1639173A1 (de) 1971-04-08
DE1639173B2 true DE1639173B2 (de) 1971-09-23
DE1639173C3 DE1639173C3 (de) 1979-03-15

Family

ID=27509903

Family Applications (3)

Application Number Title Priority Date Filing Date
DE1967D0054814 Granted DE1589707B2 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z Diodenanord nung
DE1639173A Expired DE1639173C3 (de) 1967-12-09 1968-01-20 Temperaturkompensierte Z-Diodenanordnung
DE1764251A Expired DE1764251C3 (de) 1967-12-09 1968-05-02 Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1967D0054814 Granted DE1589707B2 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z Diodenanord nung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE1764251A Expired DE1764251C3 (de) 1967-12-09 1968-05-02 Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung

Country Status (5)

Country Link
US (1) US3567965A (de)
DE (3) DE1589707B2 (de)
FR (1) FR1599179A (de)
GB (3) GB1230879A (de)
NL (1) NL6817648A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2854901A1 (de) * 1977-12-19 1979-07-12 Nippon Electric Co Konstantspannungsgenerator zum erzeugen einer konstantspannung mit vorgegebenem temperaturkoeffizienten

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756061A (fr) * 1969-09-11 1971-03-11 Philips Nv Dispositif semi-conducteur
US3703651A (en) * 1971-07-12 1972-11-21 Kollmorgen Corp Temperature-controlled integrated circuits
US3723776A (en) * 1971-12-27 1973-03-27 Us Navy Temperature compensated zener diode circuit
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS5240017B2 (de) * 1972-10-16 1977-10-08
JPS5330205Y2 (de) * 1972-11-13 1978-07-28
US3875539A (en) * 1973-11-26 1975-04-01 Amp Inc High voltage ripple reduction circuit
DE2452107C3 (de) * 1974-11-02 1979-08-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung
DE2532847C2 (de) * 1975-07-23 1982-08-19 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Schaltung mit Zenerdiodenkennlinie
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
DE2645182C2 (de) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung, Betriebsschaltung hierfür und Verwendung der Anordnung mit dieser Betriebsschaltung
US4311926A (en) * 1977-08-11 1982-01-19 Gte Laboratories Incorporated Emitter coupled logic programmable logic arrays
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3416404A1 (de) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
DE19526902A1 (de) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithisch integrierte planare Halbleiteranordnung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2854901A1 (de) * 1977-12-19 1979-07-12 Nippon Electric Co Konstantspannungsgenerator zum erzeugen einer konstantspannung mit vorgegebenem temperaturkoeffizienten

Also Published As

Publication number Publication date
DE1589707B2 (de) 1971-02-04
DE1764251C3 (de) 1980-06-19
DE1639173A1 (de) 1971-04-08
GB1245531A (en) 1971-09-08
DE1639173C3 (de) 1979-03-15
NL6817648A (de) 1969-06-11
GB1230879A (de) 1971-05-05
US3567965A (en) 1971-03-02
DE1589707A1 (de) 1970-05-06
FR1599179A (de) 1970-07-15
DE1764251B2 (de) 1979-09-27
GB1245668A (en) 1971-09-08
DE1764251A1 (de) 1972-05-04

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
EI Miscellaneous see part 3
8320 Willingness to grant licences declared (paragraph 23)