NL6817648A - - Google Patents

Info

Publication number
NL6817648A
NL6817648A NL6817648A NL6817648A NL6817648A NL 6817648 A NL6817648 A NL 6817648A NL 6817648 A NL6817648 A NL 6817648A NL 6817648 A NL6817648 A NL 6817648A NL 6817648 A NL6817648 A NL 6817648A
Authority
NL
Netherlands
Application number
NL6817648A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589707 external-priority patent/DE1589707C3/de
Application filed filed Critical
Publication of NL6817648A publication Critical patent/NL6817648A/xx

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
NL6817648A 1967-12-09 1968-12-09 NL6817648A (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z Diodenanord nung
DE19671589707 DE1589707C3 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z-Diodenanordnung
DE1639173 1968-01-20
DE1639173A DE1639173C3 (de) 1967-12-09 1968-01-20 Temperaturkompensierte Z-Diodenanordnung
DE1764251A DE1764251C3 (de) 1967-12-09 1968-05-02 Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
NL6817648A true NL6817648A (de) 1969-06-11

Family

ID=27509903

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6817648A NL6817648A (de) 1967-12-09 1968-12-09

Country Status (5)

Country Link
US (1) US3567965A (de)
DE (3) DE1589707B2 (de)
FR (1) FR1599179A (de)
GB (3) GB1230879A (de)
NL (1) NL6817648A (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756061A (fr) * 1969-09-11 1971-03-11 Philips Nv Dispositif semi-conducteur
US3703651A (en) * 1971-07-12 1972-11-21 Kollmorgen Corp Temperature-controlled integrated circuits
US3723776A (en) * 1971-12-27 1973-03-27 Us Navy Temperature compensated zener diode circuit
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS5240017B2 (de) * 1972-10-16 1977-10-08
JPS5330205Y2 (de) * 1972-11-13 1978-07-28
US3875539A (en) * 1973-11-26 1975-04-01 Amp Inc High voltage ripple reduction circuit
DE2452107C3 (de) * 1974-11-02 1979-08-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung
DE2532847C2 (de) * 1975-07-23 1982-08-19 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrierte Schaltung mit Zenerdiodenkennlinie
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
DE2645182C2 (de) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung, Betriebsschaltung hierfür und Verwendung der Anordnung mit dieser Betriebsschaltung
US4311926A (en) * 1977-08-11 1982-01-19 Gte Laboratories Incorporated Emitter coupled logic programmable logic arrays
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS6048765B2 (ja) * 1977-12-19 1985-10-29 日本電気株式会社 定電圧半導体集積回路
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3416404A1 (de) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
DE19526902A1 (de) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithisch integrierte planare Halbleiteranordnung

Also Published As

Publication number Publication date
DE1589707B2 (de) 1971-02-04
DE1764251C3 (de) 1980-06-19
DE1639173A1 (de) 1971-04-08
GB1245531A (en) 1971-09-08
DE1639173C3 (de) 1979-03-15
GB1230879A (de) 1971-05-05
US3567965A (en) 1971-03-02
DE1639173B2 (de) 1971-09-23
DE1589707A1 (de) 1970-05-06
FR1599179A (de) 1970-07-15
DE1764251B2 (de) 1979-09-27
GB1245668A (en) 1971-09-08
DE1764251A1 (de) 1972-05-04

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