GB1245668A - Temperature compensated zener diode - Google Patents
Temperature compensated zener diodeInfo
- Publication number
- GB1245668A GB1245668A GB20659/69A GB2065969A GB1245668A GB 1245668 A GB1245668 A GB 1245668A GB 20659/69 A GB20659/69 A GB 20659/69A GB 2065969 A GB2065969 A GB 2065969A GB 1245668 A GB1245668 A GB 1245668A
- Authority
- GB
- United Kingdom
- Prior art keywords
- resistor
- resistors
- emitter
- junctions
- series
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
- G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
- G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Automation & Control Theory (AREA)
- Radar, Positioning & Navigation (AREA)
- Electromagnetism (AREA)
- Nonlinear Science (AREA)
- General Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electronic Switches (AREA)
Abstract
1,245,668. Semi-conductor devices. ITT INDUSTRIES Inc. 23 April, 1969 [2 May, 1968], No. 20659/69. Addition to 1,230,879. Heading H1K. [Also in Division H3] Fine control of the temperature compensation of a simulated Zener diode structure of the kind described in the parent Specification is obtained by means of an additional transistor structure having its collector formed in the common collector zone and having a first resistor connecting its emitter to its base and a second resistor connected to its base, the emitter and the end of the second resistor remote from the base forming terminals which are inserted at some point in the series chain of forward and reverse biased emitter junctions, one of the resistors being adjusted by means of an at least partial short circuit. As shown, Fig. 2, a plurality of transistor structures, some of which have double emitters, are formed with a common collector region and are connected so that their emitters form a plurality of reverse biased Zener junctions in series with a plurality of forward biased junctions to provide temperature compensation. An additional transistor structure T is provided together with resistors R 1 and R 2 which are inserted into the series circuit. Resistor R 2 is adjustable and this is achieved by depositing a layer of metal over it during the manufacture of the device to provide a short circuit, measuring the temperature coefficient of the completed device and selectively removing parts of the metal layer short circuiting R 2 to provide the fine adjustment of temperature coefficient. The resistors may be formed as diffused regions arranged in the common collector zone, or as resistive tracks on the surface. Reference has been directed by the Comptroller to Specification 1,082,519.
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1967D0054814 DE1589707B2 (en) | 1967-12-09 | 1967-12-09 | Temperature compensated Z diode arrangement |
DE19671589707 DE1589707C3 (en) | 1967-12-09 | 1967-12-09 | Temperature-compensated Zener diode arrangement |
DE1639173A DE1639173C3 (en) | 1967-12-09 | 1968-01-20 | Temperature-compensated Zener diode arrangement |
DE1639173 | 1968-01-20 | ||
DE1764251A DE1764251C3 (en) | 1967-12-09 | 1968-05-02 | Temperature-compensated Zener diode arrangement and method for their production |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1245668A true GB1245668A (en) | 1971-09-08 |
Family
ID=27509903
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1230879D Expired GB1230879A (en) | 1967-12-09 | 1968-12-05 | |
GB2563/69A Expired GB1245531A (en) | 1967-12-09 | 1969-01-16 | Temperature compensated zener diode |
GB20659/69A Expired GB1245668A (en) | 1967-12-09 | 1969-04-23 | Temperature compensated zener diode |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB1230879D Expired GB1230879A (en) | 1967-12-09 | 1968-12-05 | |
GB2563/69A Expired GB1245531A (en) | 1967-12-09 | 1969-01-16 | Temperature compensated zener diode |
Country Status (5)
Country | Link |
---|---|
US (1) | US3567965A (en) |
DE (3) | DE1589707B2 (en) |
FR (1) | FR1599179A (en) |
GB (3) | GB1230879A (en) |
NL (1) | NL6817648A (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE756061A (en) * | 1969-09-11 | 1971-03-11 | Philips Nv | SEMICONDUCTOR DEVICE |
US3703651A (en) * | 1971-07-12 | 1972-11-21 | Kollmorgen Corp | Temperature-controlled integrated circuits |
US3723776A (en) * | 1971-12-27 | 1973-03-27 | Us Navy | Temperature compensated zener diode circuit |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
JPS5240017B2 (en) * | 1972-10-16 | 1977-10-08 | ||
JPS5330205Y2 (en) * | 1972-11-13 | 1978-07-28 | ||
US3875539A (en) * | 1973-11-26 | 1975-04-01 | Amp Inc | High voltage ripple reduction circuit |
DE2452107C3 (en) * | 1974-11-02 | 1979-08-23 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperature-compensated Zener diode arrangement |
DE2532847C2 (en) * | 1975-07-23 | 1982-08-19 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Integrated circuit with Zener diode characteristic |
US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
DE2645182C2 (en) * | 1976-10-07 | 1983-02-10 | Deutsche Itt Industries Gmbh, 7800 Freiburg | Temperature-compensated Zener diode arrangement, operating circuit for this and use of the arrangement with this operating circuit |
US4311926A (en) * | 1977-08-11 | 1982-01-19 | Gte Laboratories Incorporated | Emitter coupled logic programmable logic arrays |
US4529998A (en) * | 1977-12-14 | 1985-07-16 | Eaton Corporation | Amplified gate thyristor with non-latching amplified control transistors across base layers |
JPS6048765B2 (en) * | 1977-12-19 | 1985-10-29 | 日本電気株式会社 | Constant voltage semiconductor integrated circuit |
US4319257A (en) * | 1980-01-16 | 1982-03-09 | Harris Corporation | Low thermal coefficient semiconductor device |
DE3416404A1 (en) * | 1984-05-04 | 1985-11-07 | Robert Bosch Gmbh, 7000 Stuttgart | MONOLITHICALLY INTEGRATED PLANAR SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF |
US5068702A (en) * | 1986-03-31 | 1991-11-26 | Exar Corporation | Programmable transistor |
DE19526902A1 (en) * | 1995-07-22 | 1997-01-23 | Bosch Gmbh Robert | Monolithically integrated planar semiconductor device |
-
1967
- 1967-12-09 DE DE1967D0054814 patent/DE1589707B2/en active Granted
-
1968
- 1968-01-20 DE DE1639173A patent/DE1639173C3/en not_active Expired
- 1968-05-02 DE DE1764251A patent/DE1764251C3/en not_active Expired
- 1968-12-05 US US781358A patent/US3567965A/en not_active Expired - Lifetime
- 1968-12-05 GB GB1230879D patent/GB1230879A/en not_active Expired
- 1968-12-09 FR FR1599179D patent/FR1599179A/fr not_active Expired
- 1968-12-09 NL NL6817648A patent/NL6817648A/xx unknown
-
1969
- 1969-01-16 GB GB2563/69A patent/GB1245531A/en not_active Expired
- 1969-04-23 GB GB20659/69A patent/GB1245668A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1599179A (en) | 1970-07-15 |
DE1589707B2 (en) | 1971-02-04 |
DE1764251A1 (en) | 1972-05-04 |
GB1230879A (en) | 1971-05-05 |
DE1764251C3 (en) | 1980-06-19 |
DE1639173A1 (en) | 1971-04-08 |
DE1764251B2 (en) | 1979-09-27 |
DE1589707A1 (en) | 1970-05-06 |
US3567965A (en) | 1971-03-02 |
GB1245531A (en) | 1971-09-08 |
NL6817648A (en) | 1969-06-11 |
DE1639173C3 (en) | 1979-03-15 |
DE1639173B2 (en) | 1971-09-23 |
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