GB1245668A - Temperature compensated zener diode - Google Patents

Temperature compensated zener diode

Info

Publication number
GB1245668A
GB1245668A GB20659/69A GB2065969A GB1245668A GB 1245668 A GB1245668 A GB 1245668A GB 20659/69 A GB20659/69 A GB 20659/69A GB 2065969 A GB2065969 A GB 2065969A GB 1245668 A GB1245668 A GB 1245668A
Authority
GB
United Kingdom
Prior art keywords
resistor
resistors
emitter
junctions
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB20659/69A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
ITT Inc
Original Assignee
Deutsche ITT Industries GmbH
ITT Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589707 external-priority patent/DE1589707C3/en
Application filed by Deutsche ITT Industries GmbH, ITT Industries Inc filed Critical Deutsche ITT Industries GmbH
Publication of GB1245668A publication Critical patent/GB1245668A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • General Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

1,245,668. Semi-conductor devices. ITT INDUSTRIES Inc. 23 April, 1969 [2 May, 1968], No. 20659/69. Addition to 1,230,879. Heading H1K. [Also in Division H3] Fine control of the temperature compensation of a simulated Zener diode structure of the kind described in the parent Specification is obtained by means of an additional transistor structure having its collector formed in the common collector zone and having a first resistor connecting its emitter to its base and a second resistor connected to its base, the emitter and the end of the second resistor remote from the base forming terminals which are inserted at some point in the series chain of forward and reverse biased emitter junctions, one of the resistors being adjusted by means of an at least partial short circuit. As shown, Fig. 2, a plurality of transistor structures, some of which have double emitters, are formed with a common collector region and are connected so that their emitters form a plurality of reverse biased Zener junctions in series with a plurality of forward biased junctions to provide temperature compensation. An additional transistor structure T is provided together with resistors R 1 and R 2 which are inserted into the series circuit. Resistor R 2 is adjustable and this is achieved by depositing a layer of metal over it during the manufacture of the device to provide a short circuit, measuring the temperature coefficient of the completed device and selectively removing parts of the metal layer short circuiting R 2 to provide the fine adjustment of temperature coefficient. The resistors may be formed as diffused regions arranged in the common collector zone, or as resistive tracks on the surface. Reference has been directed by the Comptroller to Specification 1,082,519.
GB20659/69A 1967-12-09 1969-04-23 Temperature compensated zener diode Expired GB1245668A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (en) 1967-12-09 1967-12-09 Temperature compensated Z diode arrangement
DE19671589707 DE1589707C3 (en) 1967-12-09 1967-12-09 Temperature-compensated Zener diode arrangement
DE1639173 1968-01-20
DE1639173A DE1639173C3 (en) 1967-12-09 1968-01-20 Temperature-compensated Zener diode arrangement
DE1764251A DE1764251C3 (en) 1967-12-09 1968-05-02 Temperature-compensated Zener diode arrangement and method for their production

Publications (1)

Publication Number Publication Date
GB1245668A true GB1245668A (en) 1971-09-08

Family

ID=27509903

Family Applications (3)

Application Number Title Priority Date Filing Date
GB1230879D Expired GB1230879A (en) 1967-12-09 1968-12-05
GB2563/69A Expired GB1245531A (en) 1967-12-09 1969-01-16 Temperature compensated zener diode
GB20659/69A Expired GB1245668A (en) 1967-12-09 1969-04-23 Temperature compensated zener diode

Family Applications Before (2)

Application Number Title Priority Date Filing Date
GB1230879D Expired GB1230879A (en) 1967-12-09 1968-12-05
GB2563/69A Expired GB1245531A (en) 1967-12-09 1969-01-16 Temperature compensated zener diode

Country Status (5)

Country Link
US (1) US3567965A (en)
DE (3) DE1589707B2 (en)
FR (1) FR1599179A (en)
GB (3) GB1230879A (en)
NL (1) NL6817648A (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756061A (en) * 1969-09-11 1971-03-11 Philips Nv SEMICONDUCTOR DEVICE
US3703651A (en) * 1971-07-12 1972-11-21 Kollmorgen Corp Temperature-controlled integrated circuits
US3723776A (en) * 1971-12-27 1973-03-27 Us Navy Temperature compensated zener diode circuit
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS5240017B2 (en) * 1972-10-16 1977-10-08
JPS5330205Y2 (en) * 1972-11-13 1978-07-28
US3875539A (en) * 1973-11-26 1975-04-01 Amp Inc High voltage ripple reduction circuit
DE2452107C3 (en) * 1974-11-02 1979-08-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement
DE2532847C2 (en) * 1975-07-23 1982-08-19 Deutsche Itt Industries Gmbh, 7800 Freiburg Integrated circuit with Zener diode characteristic
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
DE2645182C2 (en) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperature-compensated Zener diode arrangement, operating circuit for this and use of the arrangement with this operating circuit
US4311926A (en) * 1977-08-11 1982-01-19 Gte Laboratories Incorporated Emitter coupled logic programmable logic arrays
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS6048765B2 (en) * 1977-12-19 1985-10-29 日本電気株式会社 Constant voltage semiconductor integrated circuit
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3416404A1 (en) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart MONOLITHICALLY INTEGRATED PLANAR SEMICONDUCTOR ARRANGEMENT AND METHOD FOR THE PRODUCTION THEREOF
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
DE19526902A1 (en) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithically integrated planar semiconductor device

Also Published As

Publication number Publication date
DE1589707B2 (en) 1971-02-04
DE1764251C3 (en) 1980-06-19
DE1639173A1 (en) 1971-04-08
GB1245531A (en) 1971-09-08
DE1639173C3 (en) 1979-03-15
NL6817648A (en) 1969-06-11
GB1230879A (en) 1971-05-05
US3567965A (en) 1971-03-02
DE1639173B2 (en) 1971-09-23
DE1589707A1 (en) 1970-05-06
FR1599179A (en) 1970-07-15
DE1764251B2 (en) 1979-09-27
DE1764251A1 (en) 1972-05-04

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