FR1599179A - - Google Patents

Info

Publication number
FR1599179A
FR1599179A FR1599179DA FR1599179A FR 1599179 A FR1599179 A FR 1599179A FR 1599179D A FR1599179D A FR 1599179DA FR 1599179 A FR1599179 A FR 1599179A
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
French (fr)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19671589707 external-priority patent/DE1589707C3/de
Application filed filed Critical
Application granted granted Critical
Publication of FR1599179A publication Critical patent/FR1599179A/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10D89/105—Integrated device layouts adapted for thermal considerations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electronic Switches (AREA)
FR1599179D 1967-12-09 1968-12-09 Expired FR1599179A (enrdf_load_stackoverflow)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE1967D0054814 DE1589707B2 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z Diodenanord nung
DE19671589707 DE1589707C3 (de) 1967-12-09 1967-12-09 Temperaturkompensierte Z-Diodenanordnung
DE1639173A DE1639173C3 (de) 1967-12-09 1968-01-20 Temperaturkompensierte Z-Diodenanordnung
DE1639173 1968-01-20
DE1764251A DE1764251C3 (de) 1967-12-09 1968-05-02 Temperaturkompensierte Z-Diodenanordnung und Verfahren zu deren Herstellung

Publications (1)

Publication Number Publication Date
FR1599179A true FR1599179A (enrdf_load_stackoverflow) 1970-07-15

Family

ID=27509903

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1599179D Expired FR1599179A (enrdf_load_stackoverflow) 1967-12-09 1968-12-09

Country Status (5)

Country Link
US (1) US3567965A (enrdf_load_stackoverflow)
DE (3) DE1589707B2 (enrdf_load_stackoverflow)
FR (1) FR1599179A (enrdf_load_stackoverflow)
GB (3) GB1230879A (enrdf_load_stackoverflow)
NL (1) NL6817648A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2319200A1 (fr) * 1975-07-23 1977-02-18 Itt Diode zener integree

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE756061A (fr) * 1969-09-11 1971-03-11 Philips Nv Dispositif semi-conducteur
US3703651A (en) * 1971-07-12 1972-11-21 Kollmorgen Corp Temperature-controlled integrated circuits
US3723776A (en) * 1971-12-27 1973-03-27 Us Navy Temperature compensated zener diode circuit
US3881179A (en) * 1972-08-23 1975-04-29 Motorola Inc Zener diode structure having three terminals
JPS5240017B2 (enrdf_load_stackoverflow) * 1972-10-16 1977-10-08
JPS5330205Y2 (enrdf_load_stackoverflow) * 1972-11-13 1978-07-28
US3875539A (en) * 1973-11-26 1975-04-01 Amp Inc High voltage ripple reduction circuit
DE2452107C3 (de) * 1974-11-02 1979-08-23 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung
US4075649A (en) * 1975-11-25 1978-02-21 Siemens Corporation Single chip temperature compensated reference diode and method for making same
DE2645182C2 (de) * 1976-10-07 1983-02-10 Deutsche Itt Industries Gmbh, 7800 Freiburg Temperaturkompensierte Z-Diodenanordnung, Betriebsschaltung hierfür und Verwendung der Anordnung mit dieser Betriebsschaltung
US4311926A (en) * 1977-08-11 1982-01-19 Gte Laboratories Incorporated Emitter coupled logic programmable logic arrays
US4529998A (en) * 1977-12-14 1985-07-16 Eaton Corporation Amplified gate thyristor with non-latching amplified control transistors across base layers
JPS6048765B2 (ja) * 1977-12-19 1985-10-29 日本電気株式会社 定電圧半導体集積回路
US4319257A (en) * 1980-01-16 1982-03-09 Harris Corporation Low thermal coefficient semiconductor device
DE3416404A1 (de) * 1984-05-04 1985-11-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte planare halbleiteranordnung und verfahren zu dessen herstellung
US5068702A (en) * 1986-03-31 1991-11-26 Exar Corporation Programmable transistor
DE19526902A1 (de) * 1995-07-22 1997-01-23 Bosch Gmbh Robert Monolithisch integrierte planare Halbleiteranordnung

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2319200A1 (fr) * 1975-07-23 1977-02-18 Itt Diode zener integree

Also Published As

Publication number Publication date
DE1764251A1 (de) 1972-05-04
DE1639173A1 (de) 1971-04-08
GB1245531A (en) 1971-09-08
US3567965A (en) 1971-03-02
GB1245668A (en) 1971-09-08
DE1764251B2 (enrdf_load_stackoverflow) 1979-09-27
DE1764251C3 (de) 1980-06-19
DE1639173B2 (de) 1971-09-23
DE1589707A1 (de) 1970-05-06
GB1230879A (enrdf_load_stackoverflow) 1971-05-05
DE1589707B2 (de) 1971-02-04
DE1639173C3 (de) 1979-03-15
NL6817648A (enrdf_load_stackoverflow) 1969-06-11

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