GB1193113A - Improvements in and relating to Transistors. - Google Patents

Improvements in and relating to Transistors.

Info

Publication number
GB1193113A
GB1193113A GB29402/67A GB2940267A GB1193113A GB 1193113 A GB1193113 A GB 1193113A GB 29402/67 A GB29402/67 A GB 29402/67A GB 2940267 A GB2940267 A GB 2940267A GB 1193113 A GB1193113 A GB 1193113A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
insulation
contact
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29402/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1193113A publication Critical patent/GB1193113A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
GB29402/67A 1966-06-29 1967-06-26 Improvements in and relating to Transistors. Expired GB1193113A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6609002A NL6609002A (enExample) 1966-06-29 1966-06-29

Publications (1)

Publication Number Publication Date
GB1193113A true GB1193113A (en) 1970-05-28

Family

ID=19797000

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29402/67A Expired GB1193113A (en) 1966-06-29 1967-06-26 Improvements in and relating to Transistors.

Country Status (10)

Country Link
US (1) US3482150A (enExample)
AT (1) AT278094B (enExample)
BE (1) BE700582A (enExample)
CH (1) CH465063A (enExample)
DK (1) DK119715B (enExample)
ES (1) ES342362A1 (enExample)
GB (1) GB1193113A (enExample)
NL (1) NL6609002A (enExample)
NO (1) NO120434B (enExample)
SE (1) SE326776B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911468A (en) * 1970-05-22 1975-10-07 Kyoichiro Fujikawa Magnetic-to-electric conversion semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183576A (en) * 1962-06-26 1965-05-18 Ibm Method of making transistor structures
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
DE1464921B2 (de) * 1963-10-03 1971-10-07 Fujitsu Ltd , Kawasaki, Kanagawa (Japan) Verfahren zum herstellen einer halbleiteranordnung
DE1273698B (de) * 1964-01-08 1968-07-25 Telefunken Patent Halbleiteranordnung
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
NL134388C (enExample) * 1964-05-15 1900-01-01
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating

Also Published As

Publication number Publication date
DE1614261B2 (de) 1972-07-13
DK119715B (da) 1971-02-15
ES342362A1 (es) 1968-10-16
BE700582A (enExample) 1967-12-27
CH465063A (de) 1968-11-15
AT278094B (de) 1970-01-26
US3482150A (en) 1969-12-02
NL6609002A (enExample) 1968-01-02
DE1614261A1 (de) 1970-05-27
SE326776B (enExample) 1970-08-03
NO120434B (enExample) 1970-10-19

Similar Documents

Publication Publication Date Title
GB1425986A (en) Semiconductor devices comprising insulated-gate- field-effect transistors
GB1524864A (en) Monolithic semiconductor arrangements
JPS4820951B1 (enExample)
GB1397086A (en) Semiconductor device having darlington circuit
GB1153497A (en) Improvements in and relating to Semiconductor Devices
GB1311446A (en) Semiconductor devices
ES404386A1 (es) Un dispositivo semiconductor.
GB1135555A (en) Improvements in or relating to semiconductor devices
GB1502122A (en) Semiconductor devices
GB1246864A (en) Transistor
ES342362A1 (es) Un dispositivo transistor.
GB1088776A (en) Semiconductor controlled rectifier having a shorted emitter
GB1450749A (en) Semiconductor darlington circuit
KR850003478A (ko) 절연기판 실리콘내에 형성된 레이터랄 바이폴라 트랜지스터
GB1529216A (en) Lateral bipolar transistor
GB1127629A (en) Improved semi-conductor element
GB1531811A (en) Complementary transistors and their manufacture
GB1094336A (en) Thyristors
GB1209740A (en) Transistors
GB1245765A (en) Surface diffused semiconductor devices
GB1362852A (en) High frequency planar transistor employing highly resistive guard ring
GB1480050A (en) Semiconductor device
JPS58161375A (ja) 絶縁ゲ−ト形電界効果半導体集積回路の入力保護回路
GB1300726A (en) Semiconductor devices
GB1090457A (en) Semiconductor devices

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee