GB1193113A - Improvements in and relating to Transistors. - Google Patents

Improvements in and relating to Transistors.

Info

Publication number
GB1193113A
GB1193113A GB29402/67A GB2940267A GB1193113A GB 1193113 A GB1193113 A GB 1193113A GB 29402/67 A GB29402/67 A GB 29402/67A GB 2940267 A GB2940267 A GB 2940267A GB 1193113 A GB1193113 A GB 1193113A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
insulation
contact
zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB29402/67A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electronics UK Ltd
Original Assignee
Philips Electronic and Associated Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronic and Associated Industries Ltd filed Critical Philips Electronic and Associated Industries Ltd
Publication of GB1193113A publication Critical patent/GB1193113A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1,193,113. Semi-conductor devices. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 26 June, 1967 [29 June, 1966], No. 29402/67. Heading H1K. The contact 51 to the emitter zone 43 of a planar transistor passes through an aperture 50 in an insulating layer 45 and extends over that layer to provide a substantial area within which a lead-out conductor 52 may be attached. This area it to one side of the emitter zone and the extent of its spread over the insulation is such that it nowhere extends beyond the line of contact of the collector-base junction 46 with the semi-conductor surface 44. Thus the extended contact 51 is insulated from the collector zone 41 by both the insulation 45 and the base zone 42. This arrangement minimizes the emitter-collector breakdown voltage, and so makes the transistor particularly suitable for grounded base operation. The base contact 54 also occupies an extended area wholly within the perimeter defined by the collector-base junction. It may, as shown, extend over the insulation in the same way as the emitter contact, or it may lie wholly within an extended area aperture in the insulation. The Specification includes a detailed description of a manufacturing process resulting in a transistor generally similar to that of Fig. 5, the various stages of the process being depicted in Figs. 7 to 16 (not shown). In a modified construction shown in plan in Fig. 17, the base zone perimeter 87 is dumb-bell shaped and the insulation contains two apertures 82 for contacting the base and one, 81, for contacting the emitter. The extended area emitter and base contacts, 83 and 84 respectively, interdigitate as shown.
GB29402/67A 1966-06-29 1967-06-26 Improvements in and relating to Transistors. Expired GB1193113A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6609002A NL6609002A (en) 1966-06-29 1966-06-29

Publications (1)

Publication Number Publication Date
GB1193113A true GB1193113A (en) 1970-05-28

Family

ID=19797000

Family Applications (1)

Application Number Title Priority Date Filing Date
GB29402/67A Expired GB1193113A (en) 1966-06-29 1967-06-26 Improvements in and relating to Transistors.

Country Status (10)

Country Link
US (1) US3482150A (en)
AT (1) AT278094B (en)
BE (1) BE700582A (en)
CH (1) CH465063A (en)
DK (1) DK119715B (en)
ES (1) ES342362A1 (en)
GB (1) GB1193113A (en)
NL (1) NL6609002A (en)
NO (1) NO120434B (en)
SE (1) SE326776B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911468A (en) * 1970-05-22 1975-10-07 Kyoichiro Fujikawa Magnetic-to-electric conversion semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183576A (en) * 1962-06-26 1965-05-18 Ibm Method of making transistor structures
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
DE1464921B2 (en) * 1963-10-03 1971-10-07 Fujitsu Ltd , Kawasaki, Kanagawa (Japan) METHOD OF MANUFACTURING A SEMICONDUCTOR ARRANGEMENT
DE1273698B (en) * 1964-01-08 1968-07-25 Telefunken Patent Semiconductor device
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
NL134388C (en) * 1964-05-15 1900-01-01
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating

Also Published As

Publication number Publication date
NL6609002A (en) 1968-01-02
US3482150A (en) 1969-12-02
DE1614261A1 (en) 1970-05-27
DE1614261B2 (en) 1972-07-13
BE700582A (en) 1967-12-27
AT278094B (en) 1970-01-26
ES342362A1 (en) 1968-10-16
DK119715B (en) 1971-02-15
NO120434B (en) 1970-10-19
CH465063A (en) 1968-11-15
SE326776B (en) 1970-08-03

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee