SE326776B - - Google Patents

Info

Publication number
SE326776B
SE326776B SE09157/67*A SE915767A SE326776B SE 326776 B SE326776 B SE 326776B SE 915767 A SE915767 A SE 915767A SE 326776 B SE326776 B SE 326776B
Authority
SE
Sweden
Application number
SE09157/67*A
Inventor
G Wolfrum
T Enzlin
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of SE326776B publication Critical patent/SE326776B/xx

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • H10W20/40
    • H10W72/5363
    • H10W72/59
    • H10W72/932

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
SE09157/67*A 1966-06-29 1967-06-26 SE326776B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6609002A NL6609002A (enExample) 1966-06-29 1966-06-29

Publications (1)

Publication Number Publication Date
SE326776B true SE326776B (enExample) 1970-08-03

Family

ID=19797000

Family Applications (1)

Application Number Title Priority Date Filing Date
SE09157/67*A SE326776B (enExample) 1966-06-29 1967-06-26

Country Status (10)

Country Link
US (1) US3482150A (enExample)
AT (1) AT278094B (enExample)
BE (1) BE700582A (enExample)
CH (1) CH465063A (enExample)
DK (1) DK119715B (enExample)
ES (1) ES342362A1 (enExample)
GB (1) GB1193113A (enExample)
NL (1) NL6609002A (enExample)
NO (1) NO120434B (enExample)
SE (1) SE326776B (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3911468A (en) * 1970-05-22 1975-10-07 Kyoichiro Fujikawa Magnetic-to-electric conversion semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3183576A (en) * 1962-06-26 1965-05-18 Ibm Method of making transistor structures
US3302076A (en) * 1963-06-06 1967-01-31 Motorola Inc Semiconductor device with passivated junction
DE1464921B2 (de) * 1963-10-03 1971-10-07 Fujitsu Ltd , Kawasaki, Kanagawa (Japan) Verfahren zum herstellen einer halbleiteranordnung
DE1273698B (de) * 1964-01-08 1968-07-25 Telefunken Patent Halbleiteranordnung
US3363152A (en) * 1964-01-24 1968-01-09 Westinghouse Electric Corp Semiconductor devices with low leakage current across junction
NL134388C (enExample) * 1964-05-15 1900-01-01
US3305913A (en) * 1964-09-11 1967-02-28 Northern Electric Co Method for making a semiconductor device by diffusing impurities through spaced-apart holes in a non-conducting coating to form an overlapped diffused region by means oftransverse diffusion underneath the coating

Also Published As

Publication number Publication date
GB1193113A (en) 1970-05-28
CH465063A (de) 1968-11-15
US3482150A (en) 1969-12-02
DK119715B (da) 1971-02-15
DE1614261B2 (de) 1972-07-13
NL6609002A (enExample) 1968-01-02
ES342362A1 (es) 1968-10-16
BE700582A (enExample) 1967-12-27
DE1614261A1 (de) 1970-05-27
AT278094B (de) 1970-01-26
NO120434B (enExample) 1970-10-19

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