GB1173097A - A Method for Controlling the Surface Potential of a Semiconductor - Google Patents

A Method for Controlling the Surface Potential of a Semiconductor

Info

Publication number
GB1173097A
GB1173097A GB55704/67A GB5570467A GB1173097A GB 1173097 A GB1173097 A GB 1173097A GB 55704/67 A GB55704/67 A GB 55704/67A GB 5570467 A GB5570467 A GB 5570467A GB 1173097 A GB1173097 A GB 1173097A
Authority
GB
United Kingdom
Prior art keywords
deposition
surface potential
source
sio
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB55704/67A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1173097A publication Critical patent/GB1173097A/en
Expired legal-status Critical Current

Links

Classifications

    • H10P14/69215
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • C23C16/402Silicon dioxide
    • H10P14/6328
    • H10P14/6334
    • H10P14/662
    • H10P14/6929
    • H10P14/69391

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
GB55704/67A 1967-01-13 1967-12-07 A Method for Controlling the Surface Potential of a Semiconductor Expired GB1173097A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US60920067A 1967-01-13 1967-01-13

Publications (1)

Publication Number Publication Date
GB1173097A true GB1173097A (en) 1969-12-03

Family

ID=24439760

Family Applications (1)

Application Number Title Priority Date Filing Date
GB55704/67A Expired GB1173097A (en) 1967-01-13 1967-12-07 A Method for Controlling the Surface Potential of a Semiconductor

Country Status (8)

Country Link
JP (2) JPS4945627B1 (cg-RX-API-DMAC10.html)
BE (1) BE706603A (cg-RX-API-DMAC10.html)
CH (1) CH487506A (cg-RX-API-DMAC10.html)
DE (1) DE1621272C3 (cg-RX-API-DMAC10.html)
FR (1) FR1548847A (cg-RX-API-DMAC10.html)
GB (1) GB1173097A (cg-RX-API-DMAC10.html)
NL (1) NL168369C (cg-RX-API-DMAC10.html)
SE (1) SE365651B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2268327A (en) * 1992-06-30 1994-01-05 Texas Instruments Ltd Passivated gallium arsenide device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1255995A (en) * 1968-03-04 1971-12-08 Hitachi Ltd Semiconductor device and method of making same
JPS5356729U (cg-RX-API-DMAC10.html) * 1976-10-18 1978-05-15
JPS53129436U (cg-RX-API-DMAC10.html) * 1977-03-18 1978-10-14
JPS5477639U (cg-RX-API-DMAC10.html) * 1977-11-14 1979-06-02
DE3330864A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstrate unter anwendung einer cvd-beschichtungstechnik
DE3330865A1 (de) * 1983-08-26 1985-03-14 Siemens AG, 1000 Berlin und 8000 München Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstraten unter anwendung einer cvd-beschichtungstechnik

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2268327A (en) * 1992-06-30 1994-01-05 Texas Instruments Ltd Passivated gallium arsenide device

Also Published As

Publication number Publication date
SE365651B (cg-RX-API-DMAC10.html) 1974-03-25
DE1621272A1 (de) 1971-04-29
NL168369B (nl) 1981-10-16
BE706603A (cg-RX-API-DMAC10.html) 1968-04-01
DE1621272C3 (de) 1979-08-23
CH487506A (de) 1970-03-15
DE1621272B2 (de) 1977-03-31
NL168369C (nl) 1982-03-16
JPS4945627B1 (cg-RX-API-DMAC10.html) 1974-12-05
NL6800382A (cg-RX-API-DMAC10.html) 1968-07-15
FR1548847A (cg-RX-API-DMAC10.html) 1968-12-06
JPS4945628B1 (cg-RX-API-DMAC10.html) 1974-12-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee