GB1173097A - A Method for Controlling the Surface Potential of a Semiconductor - Google Patents
A Method for Controlling the Surface Potential of a SemiconductorInfo
- Publication number
- GB1173097A GB1173097A GB55704/67A GB5570467A GB1173097A GB 1173097 A GB1173097 A GB 1173097A GB 55704/67 A GB55704/67 A GB 55704/67A GB 5570467 A GB5570467 A GB 5570467A GB 1173097 A GB1173097 A GB 1173097A
- Authority
- GB
- United Kingdom
- Prior art keywords
- deposition
- surface potential
- source
- sio
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P14/69215—
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- H10P14/6328—
-
- H10P14/6334—
-
- H10P14/662—
-
- H10P14/6929—
-
- H10P14/69391—
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Formation Of Insulating Films (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US60920067A | 1967-01-13 | 1967-01-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1173097A true GB1173097A (en) | 1969-12-03 |
Family
ID=24439760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB55704/67A Expired GB1173097A (en) | 1967-01-13 | 1967-12-07 | A Method for Controlling the Surface Potential of a Semiconductor |
Country Status (8)
| Country | Link |
|---|---|
| JP (2) | JPS4945627B1 (cg-RX-API-DMAC10.html) |
| BE (1) | BE706603A (cg-RX-API-DMAC10.html) |
| CH (1) | CH487506A (cg-RX-API-DMAC10.html) |
| DE (1) | DE1621272C3 (cg-RX-API-DMAC10.html) |
| FR (1) | FR1548847A (cg-RX-API-DMAC10.html) |
| GB (1) | GB1173097A (cg-RX-API-DMAC10.html) |
| NL (1) | NL168369C (cg-RX-API-DMAC10.html) |
| SE (1) | SE365651B (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2268327A (en) * | 1992-06-30 | 1994-01-05 | Texas Instruments Ltd | Passivated gallium arsenide device |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1255995A (en) * | 1968-03-04 | 1971-12-08 | Hitachi Ltd | Semiconductor device and method of making same |
| JPS5356729U (cg-RX-API-DMAC10.html) * | 1976-10-18 | 1978-05-15 | ||
| JPS53129436U (cg-RX-API-DMAC10.html) * | 1977-03-18 | 1978-10-14 | ||
| JPS5477639U (cg-RX-API-DMAC10.html) * | 1977-11-14 | 1979-06-02 | ||
| DE3330864A1 (de) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstrate unter anwendung einer cvd-beschichtungstechnik |
| DE3330865A1 (de) * | 1983-08-26 | 1985-03-14 | Siemens AG, 1000 Berlin und 8000 München | Vorrichtung zum aufbringen von siliziumoxidschichten auf halbleitersubstraten unter anwendung einer cvd-beschichtungstechnik |
-
1967
- 1967-11-16 BE BE706603D patent/BE706603A/xx not_active IP Right Cessation
- 1967-12-07 FR FR1548847D patent/FR1548847A/fr not_active Expired
- 1967-12-07 GB GB55704/67A patent/GB1173097A/en not_active Expired
- 1967-12-18 DE DE1621272A patent/DE1621272C3/de not_active Expired
-
1968
- 1968-01-09 CH CH35668A patent/CH487506A/de not_active IP Right Cessation
- 1968-01-11 NL NLAANVRAGE6800382,A patent/NL168369C/xx not_active IP Right Cessation
- 1968-01-12 SE SE00413/68A patent/SE365651B/xx unknown
-
1971
- 1971-10-01 JP JP46076431A patent/JPS4945627B1/ja active Pending
-
1973
- 1973-02-28 JP JP48023401A patent/JPS4945628B1/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2268327A (en) * | 1992-06-30 | 1994-01-05 | Texas Instruments Ltd | Passivated gallium arsenide device |
Also Published As
| Publication number | Publication date |
|---|---|
| SE365651B (cg-RX-API-DMAC10.html) | 1974-03-25 |
| DE1621272A1 (de) | 1971-04-29 |
| NL168369B (nl) | 1981-10-16 |
| BE706603A (cg-RX-API-DMAC10.html) | 1968-04-01 |
| DE1621272C3 (de) | 1979-08-23 |
| CH487506A (de) | 1970-03-15 |
| DE1621272B2 (de) | 1977-03-31 |
| NL168369C (nl) | 1982-03-16 |
| JPS4945627B1 (cg-RX-API-DMAC10.html) | 1974-12-05 |
| NL6800382A (cg-RX-API-DMAC10.html) | 1968-07-15 |
| FR1548847A (cg-RX-API-DMAC10.html) | 1968-12-06 |
| JPS4945628B1 (cg-RX-API-DMAC10.html) | 1974-12-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |