GB1127616A - Field-effect transistor with insulated control electrode - Google Patents

Field-effect transistor with insulated control electrode

Info

Publication number
GB1127616A
GB1127616A GB46987/65A GB4698765A GB1127616A GB 1127616 A GB1127616 A GB 1127616A GB 46987/65 A GB46987/65 A GB 46987/65A GB 4698765 A GB4698765 A GB 4698765A GB 1127616 A GB1127616 A GB 1127616A
Authority
GB
United Kingdom
Prior art keywords
source
field
nov
effect transistor
control electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB46987/65A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of GB1127616A publication Critical patent/GB1127616A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • G—PHYSICS
    • G08—SIGNALLING
    • G08B—SIGNALLING OR CALLING SYSTEMS; ORDER TELEGRAPHS; ALARM SYSTEMS
    • G08B17/00—Fire alarms; Alarms responsive to explosion
    • G08B17/10—Actuation by presence of smoke or gases, e.g. automatic alarm devices for analysing flowing fluid materials by the use of optical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Business, Economics & Management (AREA)
  • Emergency Management (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

1,127,616. Insulated - gate field - effect transistors. TELEFUNKEN PATENTVERWERTUNGS G.m.b.H. 5 Nov., 1965 [6 Nov., 1964], No. 46987/65. Heading H1K. The source-drain current is not affected until the control voltage reaches a threshold value which is predetermined by the contour of the energy bands at the surface of the region between the source and drain electrodes. As shown, the oxidization of a PNP device in moist oxygen yields an oxide layer 8 and an N + layer 14 which is previously compensated for to a desired extent by an additional diffusion of boron. Alternative methods of adjusting the properties of the source-drain channel include out-diffusion and epitaxial deposition.
GB46987/65A 1964-11-06 1965-11-05 Field-effect transistor with insulated control electrode Expired GB1127616A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0027377 1964-11-06

Publications (1)

Publication Number Publication Date
GB1127616A true GB1127616A (en) 1968-09-18

Family

ID=7553446

Family Applications (1)

Application Number Title Priority Date Filing Date
GB46987/65A Expired GB1127616A (en) 1964-11-06 1965-11-05 Field-effect transistor with insulated control electrode

Country Status (3)

Country Link
DE (1) DE1439740A1 (en)
FR (1) FR1453565A (en)
GB (1) GB1127616A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126036B1 (en) * 1970-06-19 1976-08-04
JPS5128512B1 (en) * 1970-11-21 1976-08-19

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1614861C3 (en) * 1967-09-01 1982-03-11 Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm Process for the manufacture of a junction field effect transistor
GB1261723A (en) * 1968-03-11 1972-01-26 Associated Semiconductor Mft Improvements in and relating to semiconductor devices
USRE28704E (en) * 1968-03-11 1976-02-03 U.S. Philips Corporation Semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5126036B1 (en) * 1970-06-19 1976-08-04
JPS5128512B1 (en) * 1970-11-21 1976-08-19

Also Published As

Publication number Publication date
FR1453565A (en) 1966-06-03
DE1439740A1 (en) 1970-01-22

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