GB1111910A - Improvements in or relating to cathode sputtering - Google Patents
Improvements in or relating to cathode sputteringInfo
- Publication number
- GB1111910A GB1111910A GB53862/65A GB5386265A GB1111910A GB 1111910 A GB1111910 A GB 1111910A GB 53862/65 A GB53862/65 A GB 53862/65A GB 5386265 A GB5386265 A GB 5386265A GB 1111910 A GB1111910 A GB 1111910A
- Authority
- GB
- United Kingdom
- Prior art keywords
- substrate
- cathode
- sputtering
- anode
- rods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/08—Investigating permeability, pore-volume, or surface area of porous materials
- G01N15/088—Investigating volume, surface area, size or distribution of pores; Porosimetry
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
Abstract
Cathode sputtering apparatus comprises a vacuum chamber, a cathode, substrate support and means such as a horseshoe permanent or electromagnet for generating a localized field for deflecting charged particles away from the surface of the substrate to prevent the heating of the substrate and means for adjusting the relative positions of the magnetic deflecting field and the article to vary the cooling effect. Metals such as Fe, Ni, and Co, metalloids and non metals may be deposited and reactive sputtering may be effected such as sputtering of Si in oxygen to deposit SiO2 on to Si. As shown in Fig. 1 anode 16 e.g. of aluminium and cathode 14 are supported on rests 28, 30 mounted on rods 26 electrically earthed. The substrate 18 is attached to the <PICT:1111910/C6-C7/1> anode or may be attached to the rods 26. A horseshoe magnet 40 surrounded by cooling coils 44 generates a localized field 42 over the surface of substrate 18 substantially parallel to the substrate. Figs. 2 and 3 (not shown) show a rack and pinion mechanism for adjusting the position of the magnet relative to the substrate.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US422677A US3330752A (en) | 1964-12-31 | 1964-12-31 | Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1111910A true GB1111910A (en) | 1968-05-01 |
Family
ID=23675890
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB53862/65A Expired GB1111910A (en) | 1964-12-31 | 1965-12-20 | Improvements in or relating to cathode sputtering |
GB12862/67A Expired GB1111410A (en) | 1964-12-31 | 1967-03-20 | Porosity data apparatus and method |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB12862/67A Expired GB1111410A (en) | 1964-12-31 | 1967-03-20 | Porosity data apparatus and method |
Country Status (5)
Country | Link |
---|---|
US (1) | US3330752A (en) |
FR (1) | FR1459625A (en) |
GB (2) | GB1111910A (en) |
NL (1) | NL6516538A (en) |
SE (1) | SE326354B (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0095211A2 (en) * | 1982-05-21 | 1983-11-30 | Koninklijke Philips Electronics N.V. | Magnetron cathode sputtering system |
GB2191787A (en) * | 1986-06-23 | 1987-12-23 | Balzers Hochvakuum | Process and arrangement for sputtering a material by means of high frequency |
GB2211861B (en) * | 1987-10-30 | 1992-01-29 | Pioneer Electronic Corp | Photomagnetic memory medium having a non-columnar structure |
DE4022708A1 (en) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | ETCHING OR COATING PLANTS |
DE4042417A1 (en) * | 1990-07-17 | 1992-05-14 | Balzers Hochvakuum | Etching or coating appts. with divided chamber wall |
CN109470618A (en) * | 2018-11-19 | 2019-03-15 | 庄严 | A kind of concrete impervious instrument being converted to negative pressure actuation using magnetic force |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3467057A (en) * | 1966-07-27 | 1969-09-16 | Hitachi Ltd | Electron beam evaporator |
US3889019A (en) * | 1969-03-13 | 1975-06-10 | United Aircraft Corp | Vapor randomization in vacuum deposition of coatings |
US4013539A (en) * | 1973-01-12 | 1977-03-22 | Coulter Information Systems, Inc. | Thin film deposition apparatus |
US3977955A (en) * | 1974-05-10 | 1976-08-31 | Bell Telephone Laboratories, Incorporated | Method for cathodic sputtering including suppressing temperature rise |
US4025410A (en) * | 1975-08-25 | 1977-05-24 | Western Electric Company, Inc. | Sputtering apparatus and methods using a magnetic field |
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
DE3030374C2 (en) * | 1980-08-11 | 1983-11-10 | Harro Prof. Dr. 5900 Siegen Lentz | Mercury porosimeter |
US4778561A (en) * | 1987-10-30 | 1988-10-18 | Veeco Instruments, Inc. | Electron cyclotron resonance plasma source |
RU2527656C2 (en) * | 2012-07-25 | 2014-09-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Тамбовский государственный технический университет" ФГБО ВПО ТГТУ | Method of measuring porosity of particles of bulk materials |
CN110987759A (en) * | 2019-12-11 | 2020-04-10 | 东南大学 | Device and method for testing porosity of porous material by using gas |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2754259A (en) * | 1952-11-29 | 1956-07-10 | Sprague Electric Co | Process and apparatus for growing single crystals |
US3077444A (en) * | 1956-06-13 | 1963-02-12 | Siegfried R Hoh | Laminated magnetic materials and methods |
US3117065A (en) * | 1959-09-02 | 1964-01-07 | Magnetic Film And Tape Company | Method and apparatus for making magnetic recording tape |
US3133874A (en) * | 1960-12-05 | 1964-05-19 | Robert W Morris | Production of thin film metallic patterns |
US3170810A (en) * | 1962-05-24 | 1965-02-23 | Western Electric Co | Methods of and apparatus for forming substances on preselected areas of substrates |
-
1964
- 1964-12-31 US US422677A patent/US3330752A/en not_active Expired - Lifetime
-
1965
- 1965-12-15 FR FR42302A patent/FR1459625A/en not_active Expired
- 1965-12-20 NL NL6516538A patent/NL6516538A/xx unknown
- 1965-12-20 GB GB53862/65A patent/GB1111910A/en not_active Expired
- 1965-12-29 SE SE16874/65A patent/SE326354B/xx unknown
-
1967
- 1967-03-20 GB GB12862/67A patent/GB1111410A/en not_active Expired
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0095211A2 (en) * | 1982-05-21 | 1983-11-30 | Koninklijke Philips Electronics N.V. | Magnetron cathode sputtering system |
EP0095211A3 (en) * | 1982-05-21 | 1984-05-09 | N.V. Philips' Gloeilampenfabrieken | Magnetron cathode sputtering system |
GB2191787A (en) * | 1986-06-23 | 1987-12-23 | Balzers Hochvakuum | Process and arrangement for sputtering a material by means of high frequency |
GB2191787B (en) * | 1986-06-23 | 1991-03-13 | Balzers Hochvakuum | Process and arrangement for sputtering a material by means of high frequency |
GB2211861B (en) * | 1987-10-30 | 1992-01-29 | Pioneer Electronic Corp | Photomagnetic memory medium having a non-columnar structure |
US5135819A (en) * | 1987-10-30 | 1992-08-04 | Pioneer Electronic Corporation | Photomagnetic memory medium having a non-columnar structure |
DE4022708A1 (en) * | 1990-07-17 | 1992-04-02 | Balzers Hochvakuum | ETCHING OR COATING PLANTS |
DE4042417A1 (en) * | 1990-07-17 | 1992-05-14 | Balzers Hochvakuum | Etching or coating appts. with divided chamber wall |
US5460707A (en) * | 1990-07-17 | 1995-10-24 | Balzers Aktiengesellschaft | Etching or coating method and a plant therefor |
CN109470618A (en) * | 2018-11-19 | 2019-03-15 | 庄严 | A kind of concrete impervious instrument being converted to negative pressure actuation using magnetic force |
CN109470618B (en) * | 2018-11-19 | 2021-12-17 | 莆田市荔城区任西贸易有限公司 | Adopt magnetic force to convert concrete impermeability appearance of negative pressure actuation into |
Also Published As
Publication number | Publication date |
---|---|
FR1459625A (en) | 1966-11-18 |
SE326354B (en) | 1970-07-20 |
NL6516538A (en) | 1966-07-04 |
US3330752A (en) | 1967-07-11 |
GB1111410A (en) | 1968-04-24 |
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