GB1442515A - Device for use in the deposition of thin layers under vacuum - Google Patents

Device for use in the deposition of thin layers under vacuum

Info

Publication number
GB1442515A
GB1442515A GB2954374A GB2954374A GB1442515A GB 1442515 A GB1442515 A GB 1442515A GB 2954374 A GB2954374 A GB 2954374A GB 2954374 A GB2954374 A GB 2954374A GB 1442515 A GB1442515 A GB 1442515A
Authority
GB
United Kingdom
Prior art keywords
deposition
under vacuum
thin layers
layers under
july
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2954374A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel CIT SA
Original Assignee
Alcatel CIT SA
Compagnie Industrielle de Telecommunication CIT Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA, Compagnie Industrielle de Telecommunication CIT Alcatel SA filed Critical Alcatel CIT SA
Publication of GB1442515A publication Critical patent/GB1442515A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/228Gas flow assisted PVD deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/32Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates

Abstract

1442515 Coating by vapour deposition COMPAGNIE INDUSTRIELLE DES TELECOMMUNICATIONS CIT-ALCATEL 3 July 1974 [13 July 1973] 29543/74 Heading C7F [Also in Division H5] In the vapour deposition of material 7 which is vapourized by an induction coil 12 and fed into the deposition chamber by gas from a pipe 9, the electro-magnetic field is concentrated by conductive e.g. copper, members 14, 15, and cylinders 26, 27 which confine the field in a vertical direction. A coil 16 cools the cylinder 15. In a modification Fig. 3, (not shown) the source may rotate about the axis of the chamber.
GB2954374A 1973-07-13 1974-07-03 Device for use in the deposition of thin layers under vacuum Expired GB1442515A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7325855A FR2236963B1 (en) 1973-07-13 1973-07-13

Publications (1)

Publication Number Publication Date
GB1442515A true GB1442515A (en) 1976-07-14

Family

ID=9122584

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2954374A Expired GB1442515A (en) 1973-07-13 1974-07-03 Device for use in the deposition of thin layers under vacuum

Country Status (9)

Country Link
US (1) US3886896A (en)
JP (1) JPS5039288A (en)
BE (1) BE816798A (en)
CH (1) CH584294A5 (en)
DE (1) DE2433382C2 (en)
FR (1) FR2236963B1 (en)
GB (1) GB1442515A (en)
IT (1) IT1016580B (en)
NL (1) NL7409415A (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290126A1 (en) * 1974-10-31 1976-05-28 Anvar IMPROVEMENTS TO EXCITATION DEVICES, BY HF WAVES, OF A GAS COLUMN ENCLOSED IN A ENCLOSURE
FR2456787A1 (en) * 1979-05-18 1980-12-12 Thomson Csf MICROWAVE DEVICE FOR DEPOSITING THIN FILMS ON SOLIDS
GB2085482B (en) * 1980-10-06 1985-03-06 Optical Coating Laboratory Inc Forming thin film oxide layers using reactive evaporation techniques
JPS5863399A (en) * 1981-10-14 1983-04-15 Nitto Boseki Co Ltd Novel substrate for measuring plasmin
US4466380A (en) * 1983-01-10 1984-08-21 Xerox Corporation Plasma deposition apparatus for photoconductive drums
US5216330A (en) * 1992-01-14 1993-06-01 Honeywell Inc. Ion beam gun
KR100238627B1 (en) * 1993-01-12 2000-01-15 히가시 데쓰로 Plasma processing apparatus
US6136140A (en) * 1993-01-12 2000-10-24 Tokyo Electron Limited Plasma processing apparatus
USRE40963E1 (en) * 1993-01-12 2009-11-10 Tokyo Electron Limited Method for plasma processing by shaping an induced electric field
JP3553688B2 (en) * 1995-05-10 2004-08-11 アネルバ株式会社 Plasma processing apparatus and plasma processing method
US5630880A (en) * 1996-03-07 1997-05-20 Eastlund; Bernard J. Method and apparatus for a large volume plasma processor that can utilize any feedstock material
CA2443129A1 (en) 2001-04-12 2002-10-24 Emilia Anderson High index-contrast fiber waveguides and applications
US20040141702A1 (en) * 2002-11-22 2004-07-22 Vladimir Fuflyigin Dielectric waveguide and method of making the same
ES2321444T3 (en) * 2005-05-04 2009-06-05 Oerlikon Trading Ag, Trubbach PLASMA INTENSIFIER FOR A PLASMA TREATMENT INSTALLATION.
JP4405973B2 (en) * 2006-01-17 2010-01-27 キヤノンアネルバ株式会社 Thin film production equipment

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH417118A (en) * 1961-11-23 1966-07-15 Ciba Geigy Process for the production of tantalum or niobium by reducing tantalum or niobium pentachloride in a hydrogen plasma jet
US3264508A (en) * 1962-06-27 1966-08-02 Lai William Plasma torch
GB1160895A (en) * 1965-08-25 1969-08-06 Rank Xerox Ltd Coating Surfaces by Vapour Deposition
US3736175A (en) * 1972-06-02 1973-05-29 Du Pont Vacuum coating method

Also Published As

Publication number Publication date
BE816798A (en) 1974-12-27
CH584294A5 (en) 1977-01-31
NL7409415A (en) 1975-01-15
JPS5039288A (en) 1975-04-11
IT1016580B (en) 1977-06-20
FR2236963B1 (en) 1977-02-18
DE2433382A1 (en) 1975-01-30
US3886896A (en) 1975-06-03
DE2433382C2 (en) 1982-08-19
FR2236963A1 (en) 1975-02-07

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee