GB2191787B - Process and arrangement for sputtering a material by means of high frequency - Google Patents

Process and arrangement for sputtering a material by means of high frequency

Info

Publication number
GB2191787B
GB2191787B GB8710331A GB8710331A GB2191787B GB 2191787 B GB2191787 B GB 2191787B GB 8710331 A GB8710331 A GB 8710331A GB 8710331 A GB8710331 A GB 8710331A GB 2191787 B GB2191787 B GB 2191787B
Authority
GB
United Kingdom
Prior art keywords
sputtering
arrangement
high frequency
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8710331A
Other versions
GB2191787A (en
GB8710331D0 (en
Inventor
Klaus Wellerdieck
Urs Wegmann
Karl Hofler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of GB8710331D0 publication Critical patent/GB8710331D0/en
Publication of GB2191787A publication Critical patent/GB2191787A/en
Application granted granted Critical
Publication of GB2191787B publication Critical patent/GB2191787B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
GB8710331A 1986-06-23 1987-04-30 Process and arrangement for sputtering a material by means of high frequency Expired - Lifetime GB2191787B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH251686A CH668565A5 (en) 1986-06-23 1986-06-23 METHOD AND ARRANGEMENT FOR SPRAYING A MATERIAL AT HIGH FREQUENCY.

Publications (3)

Publication Number Publication Date
GB8710331D0 GB8710331D0 (en) 1987-06-03
GB2191787A GB2191787A (en) 1987-12-23
GB2191787B true GB2191787B (en) 1991-03-13

Family

ID=4235545

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8710331A Expired - Lifetime GB2191787B (en) 1986-06-23 1987-04-30 Process and arrangement for sputtering a material by means of high frequency

Country Status (5)

Country Link
JP (1) JP2898635B2 (en)
CH (1) CH668565A5 (en)
DE (1) DE3706698C2 (en)
FR (1) FR2600269B1 (en)
GB (1) GB2191787B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6264804B1 (en) 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3920834A1 (en) * 1989-06-24 1991-02-21 Leybold Ag MICROWAVE CATHODE SPRAYING DEVICE
DE4042417C2 (en) * 1990-07-17 1993-11-25 Balzers Hochvakuum Etching or coating system and method for igniting or intermittent operation
DE4022708A1 (en) * 1990-07-17 1992-04-02 Balzers Hochvakuum ETCHING OR COATING PLANTS
JPH04280968A (en) * 1990-10-22 1992-10-06 Varian Assoc Inc High vacuum magnetron sputtering device
DE4306611B4 (en) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Device for the surface treatment of substrates by the action of plasma
DE19609248A1 (en) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Cathode sputtering apparatus - includes hollow cathode fixed to bottom of target on wall of vacuum chamber, uniform distribution diaphragm shielding bottom of target, and rotary substrate holding plate
DE19609249A1 (en) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Device for coating substrates by means of sputtering with a hollow target
JPH09228038A (en) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh Device for coating substrate by cathode sputtering provided with hollow target
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US6413381B1 (en) 2000-04-12 2002-07-02 Steag Hamatech Ag Horizontal sputtering system
DE10234859B4 (en) * 2002-07-31 2007-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for coating substrates
DE102006020291A1 (en) * 2006-04-27 2007-10-31 Ipt Ionen- Und Plasmatechnik Gmbh Plasma source, has process gas supplying device formed as metallic block, in which gas channel with two channel areas runs, where channel areas flow under angle of specific degrees to one another
DE102006062710A1 (en) * 2006-04-27 2007-11-15 Ipt Ionen- Und Plasmatechnik Gmbh Plasma source, has plasma container in housing for surrounding plasma cavity, and metal block electrically staying in connection with anode, where coating made of electrically high-conductive material is provided on external side of block
WO2010058366A1 (en) 2008-11-24 2010-05-27 Oc Oerlikon Balzers Ag Rf sputtering arrangement
EP2382648B1 (en) 2008-12-23 2016-10-05 Oerlikon Advanced Technologies AG Rf sputtering arrangement
DE102012110927A1 (en) * 2012-11-14 2014-05-15 Von Ardenne Anlagentechnik Gmbh Vacuum processing of substrates for treating substrate, comprises igniting magnetron discharge by supplying e.g. inert working gas, displacing first plasma zone, igniting additional magnetron discharge and concentrating second plasma zone

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB776515A (en) * 1955-09-30 1957-06-05 Standard Telephones Cables Ltd Improvements in or relating to ion trap arrangements
GB1111910A (en) * 1964-12-31 1968-05-01 Ibm Improvements in or relating to cathode sputtering
GB1258301A (en) * 1968-03-15 1971-12-30
GB1358411A (en) * 1972-11-02 1974-07-03 Electrical Res Ass Sputtering
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
GB1569117A (en) * 1976-11-03 1980-06-11 Tokudo Seisakusho Kk Sputtering device
GB1587566A (en) * 1976-07-07 1981-04-08 Philips Nv Sputtering device and method
GB2157715A (en) * 1984-04-19 1985-10-30 Balzers Hochvakuum Apparatus for cathodic sputtering

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
US4278528A (en) * 1979-10-09 1981-07-14 Coulter Systems Corporation Rectilinear sputtering apparatus and method
JPS5816078A (en) * 1981-07-17 1983-01-29 Toshiba Corp Plasma etching device
JPS58141387A (en) * 1982-02-16 1983-08-22 Anelva Corp Sputtering device
US4466872A (en) * 1982-12-23 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for depositing a continuous film of minimum thickness
JPS6058794A (en) * 1983-09-09 1985-04-04 Nec Corp Telephone exchange device
JPS6074436A (en) * 1984-09-11 1985-04-26 Ulvac Corp Sputter etching device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB776515A (en) * 1955-09-30 1957-06-05 Standard Telephones Cables Ltd Improvements in or relating to ion trap arrangements
GB1111910A (en) * 1964-12-31 1968-05-01 Ibm Improvements in or relating to cathode sputtering
GB1258301A (en) * 1968-03-15 1971-12-30
GB1358411A (en) * 1972-11-02 1974-07-03 Electrical Res Ass Sputtering
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
GB1587566A (en) * 1976-07-07 1981-04-08 Philips Nv Sputtering device and method
GB1569117A (en) * 1976-11-03 1980-06-11 Tokudo Seisakusho Kk Sputtering device
GB2157715A (en) * 1984-04-19 1985-10-30 Balzers Hochvakuum Apparatus for cathodic sputtering

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6264804B1 (en) 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system
US6406598B2 (en) 2000-04-12 2002-06-18 Steag Hamatech Ag System and method for transporting and sputter coating a substrate in a sputter deposition system

Also Published As

Publication number Publication date
DE3706698A1 (en) 1988-01-14
GB2191787A (en) 1987-12-23
FR2600269A1 (en) 1987-12-24
JPS634065A (en) 1988-01-09
FR2600269B1 (en) 1992-10-02
GB8710331D0 (en) 1987-06-03
DE3706698C2 (en) 1996-11-14
JP2898635B2 (en) 1999-06-02
CH668565A5 (en) 1989-01-13

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20070429