GB8710331D0 - Sputtering material - Google Patents

Sputtering material

Info

Publication number
GB8710331D0
GB8710331D0 GB878710331A GB8710331A GB8710331D0 GB 8710331 D0 GB8710331 D0 GB 8710331D0 GB 878710331 A GB878710331 A GB 878710331A GB 8710331 A GB8710331 A GB 8710331A GB 8710331 D0 GB8710331 D0 GB 8710331D0
Authority
GB
United Kingdom
Prior art keywords
sputtering material
sputtering
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878710331A
Other versions
GB2191787B (en
GB2191787A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Balzers AG filed Critical Balzers AG
Publication of GB8710331D0 publication Critical patent/GB8710331D0/en
Publication of GB2191787A publication Critical patent/GB2191787A/en
Application granted granted Critical
Publication of GB2191787B publication Critical patent/GB2191787B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
GB8710331A 1986-06-23 1987-04-30 Process and arrangement for sputtering a material by means of high frequency Expired - Lifetime GB2191787B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH251686A CH668565A5 (en) 1986-06-23 1986-06-23 METHOD AND ARRANGEMENT FOR SPRAYING A MATERIAL AT HIGH FREQUENCY.

Publications (3)

Publication Number Publication Date
GB8710331D0 true GB8710331D0 (en) 1987-06-03
GB2191787A GB2191787A (en) 1987-12-23
GB2191787B GB2191787B (en) 1991-03-13

Family

ID=4235545

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8710331A Expired - Lifetime GB2191787B (en) 1986-06-23 1987-04-30 Process and arrangement for sputtering a material by means of high frequency

Country Status (5)

Country Link
JP (1) JP2898635B2 (en)
CH (1) CH668565A5 (en)
DE (1) DE3706698C2 (en)
FR (1) FR2600269B1 (en)
GB (1) GB2191787B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3920834A1 (en) * 1989-06-24 1991-02-21 Leybold Ag MICROWAVE CATHODE SPRAYING DEVICE
DE4022708A1 (en) * 1990-07-17 1992-04-02 Balzers Hochvakuum ETCHING OR COATING PLANTS
DE4042417C2 (en) * 1990-07-17 1993-11-25 Balzers Hochvakuum Etching or coating system and method for igniting or intermittent operation
KR920008811A (en) * 1990-10-22 1992-05-28 죠셉 비, 패어 High vacuum magnetron sputter source
DE4306611B4 (en) * 1993-03-03 2004-04-15 Unaxis Deutschland Holding Gmbh Device for the surface treatment of substrates by the action of plasma
US5716505A (en) * 1996-02-23 1998-02-10 Balzers Prozess-Systems Gmbh Apparatus for coating substrates by cathode sputtering with a hollow target
DE19609249A1 (en) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Device for coating substrates by means of sputtering with a hollow target
DE19609248A1 (en) * 1996-02-23 1997-08-28 Balzers Prozes Systeme Gmbh Cathode sputtering apparatus - includes hollow cathode fixed to bottom of target on wall of vacuum chamber, uniform distribution diaphragm shielding bottom of target, and rotary substrate holding plate
JPH09228038A (en) * 1996-02-23 1997-09-02 Balzers Prozes Syst Gmbh Device for coating substrate by cathode sputtering provided with hollow target
US6514390B1 (en) * 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US6413381B1 (en) 2000-04-12 2002-07-02 Steag Hamatech Ag Horizontal sputtering system
US6264804B1 (en) 2000-04-12 2001-07-24 Ske Technology Corp. System and method for handling and masking a substrate in a sputter deposition system
DE10234859B4 (en) * 2002-07-31 2007-05-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for coating substrates
DE102006020290B4 (en) * 2006-04-27 2010-04-15 Ipt Ionen- Und Plasmatechnik Gmbh plasma source
DE102006020291A1 (en) * 2006-04-27 2007-10-31 Ipt Ionen- Und Plasmatechnik Gmbh Plasma source, has process gas supplying device formed as metallic block, in which gas channel with two channel areas runs, where channel areas flow under angle of specific degrees to one another
JP5648189B2 (en) 2008-11-24 2015-01-07 エリコン アドバンスド テクノロジーズ アーゲー High frequency sputtering equipment
CN102265375B (en) 2008-12-23 2014-12-24 欧瑞康先进科技股份有限公司 RF sputtering arrangement
DE102012110927A1 (en) * 2012-11-14 2014-05-15 Von Ardenne Anlagentechnik Gmbh Vacuum processing of substrates for treating substrate, comprises igniting magnetron discharge by supplying e.g. inert working gas, displacing first plasma zone, igniting additional magnetron discharge and concentrating second plasma zone

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB776515A (en) * 1955-09-30 1957-06-05 Standard Telephones Cables Ltd Improvements in or relating to ion trap arrangements
US3330752A (en) * 1964-12-31 1967-07-11 Ibm Method and apparatus for cathode sputtering including suppressing temperature rise adjacent the anode using a localized magnetic field
US3369991A (en) * 1965-01-28 1968-02-20 Ibm Apparatus for cathode sputtering including a shielded rf electrode
GB1258301A (en) * 1968-03-15 1971-12-30
US3661761A (en) * 1969-06-02 1972-05-09 Ibm Rf sputtering apparatus for promoting resputtering of film during deposition
GB1358411A (en) * 1972-11-02 1974-07-03 Electrical Res Ass Sputtering
US4166018A (en) * 1974-01-31 1979-08-28 Airco, Inc. Sputtering process and apparatus
NL7607473A (en) * 1976-07-07 1978-01-10 Philips Nv SPRAYING DEVICE AND METHOD FOR SPRAYING WITH SUCH A DEVICE
GB1569117A (en) * 1976-11-03 1980-06-11 Tokudo Seisakusho Kk Sputtering device
US4278528A (en) * 1979-10-09 1981-07-14 Coulter Systems Corporation Rectilinear sputtering apparatus and method
JPS5816078A (en) * 1981-07-17 1983-01-29 Toshiba Corp Plasma etching device
JPS58141387A (en) * 1982-02-16 1983-08-22 Anelva Corp Sputtering device
US4466872A (en) * 1982-12-23 1984-08-21 At&T Technologies, Inc. Methods of and apparatus for depositing a continuous film of minimum thickness
JPS6058794A (en) * 1983-09-09 1985-04-04 Nec Corp Telephone exchange device
CH659484A5 (en) * 1984-04-19 1987-01-30 Balzers Hochvakuum ARRANGEMENT FOR COATING SUBSTRATES BY CATHODE SPRAYING.
JPS6074436A (en) * 1984-09-11 1985-04-26 Ulvac Corp Sputter etching device

Also Published As

Publication number Publication date
FR2600269A1 (en) 1987-12-24
GB2191787B (en) 1991-03-13
DE3706698A1 (en) 1988-01-14
FR2600269B1 (en) 1992-10-02
GB2191787A (en) 1987-12-23
JP2898635B2 (en) 1999-06-02
JPS634065A (en) 1988-01-09
DE3706698C2 (en) 1996-11-14
CH668565A5 (en) 1989-01-13

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Effective date: 20070429