GB1054587A - - Google Patents

Info

Publication number
GB1054587A
GB1054587A GB1054587DA GB1054587A GB 1054587 A GB1054587 A GB 1054587A GB 1054587D A GB1054587D A GB 1054587DA GB 1054587 A GB1054587 A GB 1054587A
Authority
GB
United Kingdom
Prior art keywords
pit
germanium
wafer
pits
parts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of GB1054587A publication Critical patent/GB1054587A/en
Active legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/61—Electrolytic etching
    • H10P50/613—Electrolytic etching of Group IV materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
GB1054587D 1963-07-11 Active GB1054587A (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US294383A US3267014A (en) 1963-07-11 1963-07-11 Process for rapidly etching a flatbottomed pit in a germanium wafer

Publications (1)

Publication Number Publication Date
GB1054587A true GB1054587A (enExample)

Family

ID=23133177

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1054587D Active GB1054587A (enExample) 1963-07-11

Country Status (2)

Country Link
US (1) US3267014A (enExample)
GB (1) GB1054587A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3403084A (en) * 1965-07-26 1968-09-24 Gen Electric Electrolytic material removal wherein the current-voltage relationship is in the kellogg region
US3403085A (en) * 1965-12-20 1968-09-24 Gen Electric Electrolytic material removal wherein the charge in the electrolyte is partially dissipate
US4125440A (en) * 1977-07-25 1978-11-14 International Business Machines Corporation Method for non-destructive testing of semiconductor articles
US5641391A (en) * 1995-05-15 1997-06-24 Hunter; Ian W. Three dimensional microfabrication by localized electrodeposition and etching

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2844531A (en) * 1954-05-24 1958-07-22 Bell Telephone Labor Inc Method of producing cavities in semiconductive surfaces
US2850444A (en) * 1954-11-01 1958-09-02 Rca Corp Pulse method of etching semiconductor junction devices
US2854387A (en) * 1955-11-21 1958-09-30 Philco Corp Method of jet plating
US2998362A (en) * 1958-10-16 1961-08-29 Transitron Electronic Corp Method of selectively electrolytically etching semiconductor silicon materials
GB919158A (en) * 1959-02-26 1963-02-20 Mullard Ltd Improvements in methods of etching bodies

Also Published As

Publication number Publication date
US3267014A (en) 1966-08-16

Similar Documents

Publication Publication Date Title
JPS539469A (en) Semiconductor device having electrode of stepped structure and its production
JPS51128268A (en) Semiconductor unit
JPS5559768A (en) Darlington power transistor
GB1054587A (enExample)
JPS52100885A (en) Production of semiconductor device by liquid epitaxial growth
JPS5261977A (en) Semiconductor integrated circuit device and its production
ES280288A1 (es) Un dispositivo transistor de juntura
JPS5346285A (en) Mesa type high breakdown voltage semiconductor device
JPS5261976A (en) Semiconductor integrated circuit device and its production
JPS5234674A (en) Semiconductor device
JPS5274280A (en) Semiconductor device and its production
JPS5244576A (en) Process for production of semiconductor device
JPS5265689A (en) Semiconductor integrated circuit and its production
JPS5322383A (en) Iil simiconductor device
JPS55163873A (en) Manufacture of semiconductor device
JPS539485A (en) Mesa type semiconductor device
JPS5313883A (en) Semiconductor device and its production
JPS5368175A (en) Semiconductor device
JPS52150986A (en) Compound semiconductor integrated circuit device and its production
JPS5563879A (en) Semiconductor device
JPS5316587A (en) Semiconductor device
JPS5329081A (en) Superhigh frequency semiconductor diode device
JPS5231682A (en) Production method of semiconductor device
JPS5382276A (en) Production of semiconductor device
JPS5715466A (en) Semiconductor device