GB1044469A - Power transistor - Google Patents

Power transistor

Info

Publication number
GB1044469A
GB1044469A GB39024/63A GB3902463A GB1044469A GB 1044469 A GB1044469 A GB 1044469A GB 39024/63 A GB39024/63 A GB 39024/63A GB 3902463 A GB3902463 A GB 3902463A GB 1044469 A GB1044469 A GB 1044469A
Authority
GB
United Kingdom
Prior art keywords
emitter
contact
electrode
emitter electrode
evaporated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB39024/63A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
TDK Micronas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Micronas GmbH filed Critical TDK Micronas GmbH
Publication of GB1044469A publication Critical patent/GB1044469A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)
GB39024/63A 1962-10-04 1963-10-03 Power transistor Expired GB1044469A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ22459A DE1264615B (de) 1962-10-04 1962-10-04 Emitteranschluss eines Leistungstransistors

Publications (1)

Publication Number Publication Date
GB1044469A true GB1044469A (en) 1966-09-28

Family

ID=7200967

Family Applications (1)

Application Number Title Priority Date Filing Date
GB39024/63A Expired GB1044469A (en) 1962-10-04 1963-10-03 Power transistor

Country Status (4)

Country Link
DE (1) DE1264615B (enrdf_load_stackoverflow)
FR (1) FR1358189A (enrdf_load_stackoverflow)
GB (1) GB1044469A (enrdf_load_stackoverflow)
NL (1) NL296170A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2011431A1 (enrdf_load_stackoverflow) * 1968-06-21 1970-02-27 Philips Nv
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
JPS5128471B1 (enrdf_load_stackoverflow) * 1970-10-10 1976-08-19
DE3346518C1 (de) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Feldeffekttransistor mit isolierter Gate-Elektrode
EP0239960A3 (en) * 1986-03-31 1990-04-25 Kabushiki Kaisha Toshiba Power transistor device
WO2004017415A1 (en) * 2002-08-06 2004-02-26 Nanoteco Corporation Bipolar transistor for avoiding thermal runaway

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3504239A (en) * 1964-01-31 1970-03-31 Rca Corp Transistor with distributed resistor between emitter lead and emitter region
US3368123A (en) * 1965-02-04 1968-02-06 Gen Motors Corp Semiconductor device having uniform current density on emitter periphery
US3506886A (en) * 1965-03-08 1970-04-14 Itt High power transistor assembly
DE1514266C3 (de) * 1965-08-12 1984-05-03 N.V. Philips' Gloeilampenfabrieken, Eindhoven Halbleiterbauelement und Schaltung dafür
JPS5025306B1 (enrdf_load_stackoverflow) * 1968-04-04 1975-08-22
NL6813997A (enrdf_load_stackoverflow) * 1968-09-30 1970-04-01
NL7002117A (enrdf_load_stackoverflow) * 1970-02-14 1971-08-17
JPS5641186B2 (enrdf_load_stackoverflow) * 1972-03-03 1981-09-26
JPS57117276A (en) * 1981-01-14 1982-07-21 Hitachi Ltd Semiconductor device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1786107U (de) * 1956-09-25 1959-04-02 Siemens Ag Leistungstransistor.
US2998534A (en) * 1958-09-04 1961-08-29 Clevite Corp Symmetrical junction transistor device and circuit

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2011431A1 (enrdf_load_stackoverflow) * 1968-06-21 1970-02-27 Philips Nv
JPS5128471B1 (enrdf_load_stackoverflow) * 1970-10-10 1976-08-19
DE2251727A1 (de) * 1972-10-21 1974-04-25 Licentia Gmbh Halbleiteranordnung mit mindestens zwei zonen entgegengesetzten leitfaehigkeitstyps
DE3346518C1 (de) * 1983-12-22 1989-01-12 Texas Instruments Deutschland Gmbh, 8050 Freising Feldeffekttransistor mit isolierter Gate-Elektrode
US4845536A (en) * 1983-12-22 1989-07-04 Texas Instruments Incorporated Transistor structure
EP0239960A3 (en) * 1986-03-31 1990-04-25 Kabushiki Kaisha Toshiba Power transistor device
WO2004017415A1 (en) * 2002-08-06 2004-02-26 Nanoteco Corporation Bipolar transistor for avoiding thermal runaway

Also Published As

Publication number Publication date
NL296170A (enrdf_load_stackoverflow)
FR1358189A (fr) 1964-04-10
DE1264615B (de) 1968-03-28

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