JPS63164252U - - Google Patents

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Publication number
JPS63164252U
JPS63164252U JP2970687U JP2970687U JPS63164252U JP S63164252 U JPS63164252 U JP S63164252U JP 2970687 U JP2970687 U JP 2970687U JP 2970687 U JP2970687 U JP 2970687U JP S63164252 U JPS63164252 U JP S63164252U
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JP
Japan
Prior art keywords
region
base
emitter
power semiconductor
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2970687U
Other languages
English (en)
Japanese (ja)
Other versions
JP2524553Y2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1987029706U priority Critical patent/JP2524553Y2/ja
Publication of JPS63164252U publication Critical patent/JPS63164252U/ja
Application granted granted Critical
Publication of JP2524553Y2 publication Critical patent/JP2524553Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Landscapes

  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
JP1987029706U 1987-02-27 1987-02-27 電力用半導体素子 Expired - Lifetime JP2524553Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1987029706U JP2524553Y2 (ja) 1987-02-27 1987-02-27 電力用半導体素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1987029706U JP2524553Y2 (ja) 1987-02-27 1987-02-27 電力用半導体素子

Publications (2)

Publication Number Publication Date
JPS63164252U true JPS63164252U (enrdf_load_stackoverflow) 1988-10-26
JP2524553Y2 JP2524553Y2 (ja) 1997-02-05

Family

ID=30833833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1987029706U Expired - Lifetime JP2524553Y2 (ja) 1987-02-27 1987-02-27 電力用半導体素子

Country Status (1)

Country Link
JP (1) JP2524553Y2 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000067330A1 (en) * 1999-04-30 2000-11-09 Rohm Co., Ltd. Semiconductor device having bipolar transistors

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165672A (en) * 1979-06-11 1980-12-24 Fujitsu Ltd Semiconductor device
JPS58116243U (ja) * 1982-02-03 1983-08-08 三洋電機株式会社 トランジスタ構造

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55165672A (en) * 1979-06-11 1980-12-24 Fujitsu Ltd Semiconductor device
JPS58116243U (ja) * 1982-02-03 1983-08-08 三洋電機株式会社 トランジスタ構造

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000067330A1 (en) * 1999-04-30 2000-11-09 Rohm Co., Ltd. Semiconductor device having bipolar transistors

Also Published As

Publication number Publication date
JP2524553Y2 (ja) 1997-02-05

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