GB0417749D0 - Improved bipolar MOSFET devices and methods for their use - Google Patents

Improved bipolar MOSFET devices and methods for their use

Info

Publication number
GB0417749D0
GB0417749D0 GBGB0417749.9A GB0417749A GB0417749D0 GB 0417749 D0 GB0417749 D0 GB 0417749D0 GB 0417749 A GB0417749 A GB 0417749A GB 0417749 D0 GB0417749 D0 GB 0417749D0
Authority
GB
United Kingdom
Prior art keywords
methods
mosfet devices
improved bipolar
bipolar mosfet
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB0417749.9A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eco Semiconductors Ltd
Original Assignee
Eco Semiconductors Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eco Semiconductors Ltd filed Critical Eco Semiconductors Ltd
Priority to GBGB0417749.9A priority Critical patent/GB0417749D0/en
Publication of GB0417749D0 publication Critical patent/GB0417749D0/en
Priority to JP2007525352A priority patent/JP5113961B2/ja
Priority to PCT/GB2005/003146 priority patent/WO2006016160A1/en
Priority to US11/659,812 priority patent/US7893457B2/en
Priority to EP05794178A priority patent/EP1782482A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/40—Thyristors with turn-on by field effect 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/131—Thyristors having built-in components
    • H10D84/138—Thyristors having built-in components the built-in components being FETs
GBGB0417749.9A 2004-08-10 2004-08-10 Improved bipolar MOSFET devices and methods for their use Ceased GB0417749D0 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GBGB0417749.9A GB0417749D0 (en) 2004-08-10 2004-08-10 Improved bipolar MOSFET devices and methods for their use
JP2007525352A JP5113961B2 (ja) 2004-08-10 2005-08-10 バイポーラｍｏｓｆｅｔ素子
PCT/GB2005/003146 WO2006016160A1 (en) 2004-08-10 2005-08-10 Bipolar mosfet devices
US11/659,812 US7893457B2 (en) 2004-08-10 2005-08-10 Bipolar mosfet devices and methods for their use
EP05794178A EP1782482A1 (en) 2004-08-10 2005-08-10 Bipolar mosfet devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB0417749.9A GB0417749D0 (en) 2004-08-10 2004-08-10 Improved bipolar MOSFET devices and methods for their use

Publications (1)

Publication Number Publication Date
GB0417749D0 true GB0417749D0 (en) 2004-09-08

Family

ID=32982782

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB0417749.9A Ceased GB0417749D0 (en) 2004-08-10 2004-08-10 Improved bipolar MOSFET devices and methods for their use

Country Status (5)

Country Link
US (1) US7893457B2 (https=)
EP (1) EP1782482A1 (https=)
JP (1) JP5113961B2 (https=)
GB (1) GB0417749D0 (https=)
WO (1) WO2006016160A1 (https=)

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US7582917B2 (en) * 2006-03-10 2009-09-01 Bae Systems Information And Electronic Systems Integration Inc. Monolithically integrated light-activated thyristor and method
ITTO20080046A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
ITTO20080045A1 (it) 2008-01-18 2009-07-19 St Microelectronics Srl Schiera di fotodiodi operanti in modalita' geiger reciprocamente isolati e relativo procedimento di fabbricazione
IT1392366B1 (it) * 2008-12-17 2012-02-28 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile, schiera di fotodiodi e relativo procedimento di fabbricazione
US20100213507A1 (en) * 2009-02-20 2010-08-26 Ching-Chung Ko Lateral bipolar junction transistor
US8674454B2 (en) 2009-02-20 2014-03-18 Mediatek Inc. Lateral bipolar junction transistor
US7897995B2 (en) * 2009-04-07 2011-03-01 Mediatek Inc. Lateral bipolar junction transistor with reduced base resistance
IT1393781B1 (it) * 2009-04-23 2012-05-08 St Microelectronics Rousset Fotodiodo operante in modalita' geiger con resistore di soppressione integrato e controllabile ad effetto jfet, schiera di fotodiodi e relativo procedimento di fabbricazione
US8264035B2 (en) * 2010-03-26 2012-09-11 Force Mos Technology Co., Ltd. Avalanche capability improvement in power semiconductor devices
IT1399690B1 (it) 2010-03-30 2013-04-26 St Microelectronics Srl Fotodiodo a valanga operante in modalita' geiger ad elevato rapporto segnale rumore e relativo procedimento di fabbricazione
JP5537359B2 (ja) * 2010-09-15 2014-07-02 株式会社東芝 半導体装置
JP5480084B2 (ja) 2010-09-24 2014-04-23 株式会社東芝 半導体装置
KR101352766B1 (ko) 2011-12-08 2014-01-15 서강대학교산학협력단 엔모스를 삽입한 수평형 절연게이트 바이폴라트랜지스터 소자
JP2014060362A (ja) 2012-09-19 2014-04-03 Toshiba Corp 半導体装置
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
CN104919595B (zh) 2013-06-24 2019-06-07 理想能量有限公司 具有双向双极晶体管的系统、电路、器件和方法
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9444449B2 (en) 2014-11-06 2016-09-13 Ideal Power Inc. Circuits, methods, and systems with optimized operation of double-base bipolar junction transistors
DE112015002120B4 (de) * 2014-12-19 2024-02-22 Fuji Electric Co., Ltd. Halbleitervorrichtung und Halbleitervorrichtungsherstellungsverfahren
US9520492B2 (en) * 2015-02-18 2016-12-13 Macronix International Co., Ltd. Semiconductor device having buried layer
DE112016004086T5 (de) * 2015-09-09 2018-06-14 Sumitomo Electric Industries, Ltd. Halbleiterbauelement
GB201604796D0 (en) * 2015-11-10 2016-05-04 Analog Devices Global A combined isolator and power switch
US9935628B2 (en) 2015-11-10 2018-04-03 Analog Devices Global FET—bipolar transistor combination, and a switch comprising such a FET—bipolar transistor combination
GB2606383B (en) * 2021-05-06 2026-03-25 Eco Semiconductors Ltd A semiconductor device

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Publication number Priority date Publication date Assignee Title
JP2941405B2 (ja) * 1990-10-25 1999-08-25 株式会社東芝 半導体装置
US5483087A (en) * 1994-07-08 1996-01-09 International Rectifier Corporation Bidirectional thyristor with MOS turn-off capability with a single gate
JP5054255B2 (ja) * 1997-02-07 2012-10-24 クーパー，ジェームズ・アルバート，ジュニアー シリコン・カーバイド・パワー・トランジスタの最大電圧を増大させるための構造
DE19816448C1 (de) * 1998-04-14 1999-09-30 Siemens Ag Universal-Halbleiterscheibe für Hochspannungs-Halbleiterbauelemente, ihr Herstellungsverfahren und ihre Verwendung
JP4761011B2 (ja) * 1999-05-26 2011-08-31 株式会社豊田中央研究所 サイリスタを有する半導体装置及びその製造方法
GB9921068D0 (en) * 1999-09-08 1999-11-10 Univ Montfort Bipolar mosfet device
JP2001177091A (ja) * 1999-12-07 2001-06-29 Analog & Power Electronics Corp ラッチ制御可能な絶縁ゲートバイポーラトランジスタ
DE10026925C2 (de) * 2000-05-30 2002-04-18 Infineon Technologies Ag Feldeffektgesteuertes, vertikales Halbleiterbauelement
JP3506676B2 (ja) * 2001-01-25 2004-03-15 Ｎｅｃエレクトロニクス株式会社 半導体装置
US6465304B1 (en) * 2001-10-04 2002-10-15 General Semiconductor, Inc. Method for fabricating a power semiconductor device having a floating island voltage sustaining layer
US7161208B2 (en) * 2002-05-14 2007-01-09 International Rectifier Corporation Trench mosfet with field relief feature
JP2004103980A (ja) * 2002-09-12 2004-04-02 Toshiba Corp 半導体装置
JP4209260B2 (ja) * 2003-06-04 2009-01-14 Ｎｅｃエレクトロニクス株式会社 半導体装置およびその製造方法

Also Published As

Publication number Publication date
JP5113961B2 (ja) 2013-01-09
EP1782482A1 (en) 2007-05-09
WO2006016160A1 (en) 2006-02-16
US20080191238A1 (en) 2008-08-14
JP2008510294A (ja) 2008-04-03
US7893457B2 (en) 2011-02-22

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Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)