FR96065E - Procédé de gravure précise de semiconducteurs. - Google Patents

Procédé de gravure précise de semiconducteurs.

Info

Publication number
FR96065E
FR96065E FR172255A FR96065DA FR96065E FR 96065 E FR96065 E FR 96065E FR 172255 A FR172255 A FR 172255A FR 96065D A FR96065D A FR 96065DA FR 96065 E FR96065 E FR 96065E
Authority
FR
France
Prior art keywords
etching process
semiconductor etching
precise semiconductor
precise
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR172255A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication date
Application granted granted Critical
Publication of FR96065E publication Critical patent/FR96065E/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H10P50/693—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials characterised by their size, orientation, disposition, behaviour or shape, in horizontal or vertical plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/051—Etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/115—Orientation
FR172255A 1967-11-01 Procédé de gravure précise de semiconducteurs. Expired FR96065E (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US67981867A 1967-11-01 1967-11-01

Publications (1)

Publication Number Publication Date
FR96065E true FR96065E (fr) 1972-05-19

Family

ID=24728489

Family Applications (1)

Application Number Title Priority Date Filing Date
FR172255A Expired FR96065E (fr) 1967-11-01 Procédé de gravure précise de semiconducteurs.

Country Status (7)

Country Link
US (1) US3506509A (https=)
BE (1) BE723234A (https=)
FR (1) FR96065E (https=)
GB (1) GB1250653A (https=)
MY (1) MY7300448A (https=)
NL (1) NL152115B (https=)
SE (1) SE353185B (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770533A (en) * 1971-07-02 1973-11-06 Philips Corp Method of producing high resolution patterns in single crystals
US3909325A (en) * 1974-06-28 1975-09-30 Motorola Inc Polycrystalline etch
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
US4859280A (en) * 1986-12-01 1989-08-22 Harris Corporation Method of etching silicon by enhancing silicon etching capability of alkali hydroxide through the addition of positive valence impurity ions
US4810557A (en) * 1988-03-03 1989-03-07 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making an article comprising a tandem groove, and article produced by the method
US4918030A (en) * 1989-03-31 1990-04-17 Electric Power Research Institute Method of forming light-trapping surface for photovoltaic cell and resulting structure
DE3920644C1 (https=) * 1989-06-23 1990-12-20 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De
US5431777A (en) * 1992-09-17 1995-07-11 International Business Machines Corporation Methods and compositions for the selective etching of silicon
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
US6326689B1 (en) * 1999-07-26 2001-12-04 Stmicroelectronics, Inc. Backside contact for touchchip
WO2007129555A1 (ja) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL105904C (https=) * 1955-12-30
US3041226A (en) * 1958-04-02 1962-06-26 Hughes Aircraft Co Method of preparing semiconductor crystals
US3425879A (en) * 1965-10-24 1969-02-04 Texas Instruments Inc Method of making shaped epitaxial deposits

Also Published As

Publication number Publication date
MY7300448A (en) 1973-12-31
US3506509A (en) 1970-04-14
DE1806225A1 (de) 1971-01-28
BE723234A (https=) 1969-04-01
DE1806225B2 (de) 1972-08-24
GB1250653A (https=) 1971-10-20
SE353185B (https=) 1973-01-22
NL152115B (nl) 1977-01-17
NL6815372A (https=) 1969-05-05

Similar Documents

Publication Publication Date Title
CH491207A (de) Maskenloses Aufdampfverfahren
FR1523867A (fr) Microcircuits semiconducteurs
FI48727C (fi) Menetelmä asetyyliguanidiinien valmistamiseksi.
FR96065E (fr) Procédé de gravure précise de semiconducteurs.
FI49473C (fi) Menetelmä tablettien päällystämiseksi.
CH484519A (de) Steuerbares Halbleiterbauelement
FR94682E (fr) Procédé de photoélectropolymérisation.
BR6804325D0 (pt) Processo de polimerizacao
AT273300B (de) Halbleiterbauelement
FR1545612A (fr) Procédé de fabrication de comprimés
BR6897822D0 (pt) Dispositivos semicondutores
BR6896633D0 (pt) Processo de fabricacao de l-aspartato de l-arcinina
CH483724A (de) Halbleiterbauelement
FR2000270A1 (fr) Procede de fabrication de corps semi-conducteurs
DK116949B (da) Fremgangsmåde til fremstilling af halvlederorganer.
DK124644B (da) Optoelektronisk halvleder.
CH506184A (de) Halbleiterbauelement
CH474862A (de) Halbleiterbauelement
OA03882A (fr) Procédé de résolution.
DK119169B (da) Stabiliseret halvlederapparat.
AT281120B (de) Halbleiterbauelement
CH474154A (de) Halbleiterbauelement
CH494471A (de) Halbleiterbauelement
FI45324C (fi) Menetelmä 17beta-(1-alkoksi-sykloalkyyli)oksi-2alfa,3alfa-epitio-5alfa -androstaanien valmistamiseksi.
DE1966001B2 (de) Halbleiterbauelement