FR3084966B1 - Transistor a haute mobilite electronique - Google Patents

Transistor a haute mobilite electronique Download PDF

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Publication number
FR3084966B1
FR3084966B1 FR1857480A FR1857480A FR3084966B1 FR 3084966 B1 FR3084966 B1 FR 3084966B1 FR 1857480 A FR1857480 A FR 1857480A FR 1857480 A FR1857480 A FR 1857480A FR 3084966 B1 FR3084966 B1 FR 3084966B1
Authority
FR
France
Prior art keywords
layer
interface
barrier
face
barrier layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1857480A
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English (en)
Other versions
FR3084966A1 (fr
Inventor
Nicolas Herbecq
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics France SAS
Original Assignee
Exagan SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Exagan SAS filed Critical Exagan SAS
Priority to FR1857480A priority Critical patent/FR3084966B1/fr
Priority to PCT/FR2019/051885 priority patent/WO2020035644A1/fr
Publication of FR3084966A1 publication Critical patent/FR3084966A1/fr
Application granted granted Critical
Publication of FR3084966B1 publication Critical patent/FR3084966B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

L'invention concerne un transistor (100) à haute mobilité électronique comprenant : • Une structure (10) comportant un empilement (1) en matériaux semi-conducteurs de type III-N définissant une interface (2) et apte à former une couche de conduction (3) sous forme d'une couche de gaz d'électrons à deux dimensions, sensiblement sous ladite interface (2), l'empilement comprenant au moins une couche canal (4) et une couche barrière (5) de part et d'autre de l'interface (2), et la couche barrière (5) étant un composé ternaire ou quaternaire III-N comprenant de l'aluminium, • Une électrode de grille (40) disposée dans un renfoncement (5c) de la couche barrière (5), une épaisseur résiduelle (er) de couche barrière (5) se trouvant sous l'électrode de grille (40). La couche barrière (5) présente un gradient de concentration en aluminium continu sur son épaisseur (e) : le gradient est croissant entre une première face (5a) disposée sur l'interface (2) et une deuxième face (5b) de la couche barrière (5), de sorte que la concentration en aluminium soit inférieure ou égale à 20% dans l'épaisseur résiduelle (er) et que la concentration en aluminium au niveau de la deuxième face (5b) soit supérieure ou égale à 40%.
FR1857480A 2018-08-13 2018-08-13 Transistor a haute mobilite electronique Active FR3084966B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1857480A FR3084966B1 (fr) 2018-08-13 2018-08-13 Transistor a haute mobilite electronique
PCT/FR2019/051885 WO2020035644A1 (fr) 2018-08-13 2019-07-31 Transistor a haute mobilite electronique

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1857480 2018-08-13
FR1857480A FR3084966B1 (fr) 2018-08-13 2018-08-13 Transistor a haute mobilite electronique

Publications (2)

Publication Number Publication Date
FR3084966A1 FR3084966A1 (fr) 2020-02-14
FR3084966B1 true FR3084966B1 (fr) 2020-07-17

Family

ID=65685454

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1857480A Active FR3084966B1 (fr) 2018-08-13 2018-08-13 Transistor a haute mobilite electronique

Country Status (2)

Country Link
FR (1) FR3084966B1 (fr)
WO (1) WO2020035644A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5334149B2 (ja) * 2006-06-02 2013-11-06 独立行政法人産業技術総合研究所 窒化物半導体電界効果トランジスタ
JP5580009B2 (ja) * 2009-08-28 2014-08-27 日本碍子株式会社 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法
US9171946B2 (en) * 2013-03-05 2015-10-27 Seoul Semiconductor Co., Ltd. Nitride semiconductor device and method of manufacturing the same
US20140252371A1 (en) * 2013-03-08 2014-09-11 Seoul Semiconductor Co., Ltd. Heterojunction transistor and method of fabricating the same

Also Published As

Publication number Publication date
WO2020035644A1 (fr) 2020-02-20
FR3084966A1 (fr) 2020-02-14

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