FR3048288B1 - Detecteur electronique integre de variations de potentiel a haute sensibilite - Google Patents

Detecteur electronique integre de variations de potentiel a haute sensibilite Download PDF

Info

Publication number
FR3048288B1
FR3048288B1 FR1651570A FR1651570A FR3048288B1 FR 3048288 B1 FR3048288 B1 FR 3048288B1 FR 1651570 A FR1651570 A FR 1651570A FR 1651570 A FR1651570 A FR 1651570A FR 3048288 B1 FR3048288 B1 FR 3048288B1
Authority
FR
France
Prior art keywords
configuration
integrated electronic
mos transistor
high sensitivity
electronic sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1651570A
Other languages
English (en)
Other versions
FR3048288A1 (fr
Inventor
Stephane Monfray
Gaspard Hiblot
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics Crolles 2 SAS
Original Assignee
STMicroelectronics Crolles 2 SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics Crolles 2 SAS filed Critical STMicroelectronics Crolles 2 SAS
Priority to FR1651570A priority Critical patent/FR3048288B1/fr
Priority to US15/251,009 priority patent/US10074649B2/en
Publication of FR3048288A1 publication Critical patent/FR3048288A1/fr
Application granted granted Critical
Publication of FR3048288B1 publication Critical patent/FR3048288B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
    • G01N27/4145—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/483—Physical analysis of biological material
    • G01N33/487—Physical analysis of biological material of liquid biological material
    • G01N33/49—Blood
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/165—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values
    • G01R19/16504—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed
    • G01R19/16519—Indicating that current or voltage is either above or below a predetermined value or within or outside a predetermined range of values characterised by the components employed using FET's

Abstract

Le détecteur électronique intégré est configuré pour détecter l'apparition d'une variation de potentiel sur sa borne d'entrée et comporte un transistor MOS (11) dont le drain (D) forme une borne de sortie, et dans lequel la variation du courant de drain (Id) est représentative de ladite variation de potentiel sur la borne d'entrée. Le détecteur comprend en outre un transistor bipolaire (12) dont la base forme la borne d'entrée et dont le collecteur (C) est électriquement connecté à la grille (G) du transistor MOS, et possède une première configuration dans laquelle le transistor bipolaire (12) est passant et le transistor MOS est bloqué, et une deuxième configuration dans laquelle le transistor bipolaire (12) est bloqué et le transistor MOS (11) est dans un fonctionnement sous-seuil, le détecteur étant configuré pour passer de sa première configuration à sa deuxième configuration lors de l'apparition de ladite variation de potentiel.
FR1651570A 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite Expired - Fee Related FR3048288B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1651570A FR3048288B1 (fr) 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite
US15/251,009 US10074649B2 (en) 2016-02-25 2016-08-30 High-sensitivity electronic detector

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1651570 2016-02-25
FR1651570A FR3048288B1 (fr) 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite

Publications (2)

Publication Number Publication Date
FR3048288A1 FR3048288A1 (fr) 2017-09-01
FR3048288B1 true FR3048288B1 (fr) 2018-03-23

Family

ID=57348744

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1651570A Expired - Fee Related FR3048288B1 (fr) 2016-02-25 2016-02-25 Detecteur electronique integre de variations de potentiel a haute sensibilite

Country Status (2)

Country Link
US (1) US10074649B2 (fr)
FR (1) FR3048288B1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11482521B2 (en) * 2020-02-06 2022-10-25 Globalfoundries U.S. Inc. Integrated circuit with P-N-P junction and vertically aligned field effect transistor, and method to form same

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51101478A (fr) * 1975-03-04 1976-09-07 Suwa Seikosha Kk
US5087579A (en) * 1987-05-28 1992-02-11 Texas Instruments Incorporated Method for fabricating an integrated bipolar-CMOS circuit isolation for providing different backgate and substrate bias
US5256582A (en) * 1989-02-10 1993-10-26 Texas Instruments Incorporated Method of forming complementary bipolar and MOS transistor having power and logic structures on the same integrated circuit substrate
US5171699A (en) * 1990-10-03 1992-12-15 Texas Instruments Incorporated Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication
US5296409A (en) * 1992-05-08 1994-03-22 National Semiconductor Corporation Method of making n-channel and p-channel junction field-effect transistors and CMOS transistors using a CMOS or bipolar/CMOS process
JPH06163907A (ja) * 1992-11-20 1994-06-10 Hitachi Ltd 電圧駆動型半導体装置
US5936454A (en) * 1993-06-01 1999-08-10 Motorola, Inc. Lateral bipolar transistor operating with independent base and gate biasing
US5717241A (en) * 1993-12-09 1998-02-10 Northern Telecom Limited Gate controlled lateral bipolar junction transistor
US5764106A (en) * 1993-12-09 1998-06-09 Northern Telecom Limited Gain-controlled amplifier and automatic gain control amplifier using GCLBT
JP3325396B2 (ja) * 1994-08-19 2002-09-17 株式会社東芝 半導体集積回路
US6071768A (en) * 1996-05-17 2000-06-06 Texas Instruments Incorporated Method of making an efficient NPN turn-on in a high voltage DENMOS transistor for ESD protection
EP0809293B1 (fr) * 1996-05-21 2001-08-29 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Structure semi-conductrice de puissance avec transistor latéral commandé par un transistor vertical
FR2789519B1 (fr) * 1999-02-05 2003-03-28 Commissariat Energie Atomique Transistor mos a tension de seuil dynamique equipe d'un limiteur de courant, et procede de realisation d'un tel transistor
JP4128700B2 (ja) * 1999-09-08 2008-07-30 ローム株式会社 誘導性負荷駆動回路
JP4091785B2 (ja) * 2001-12-13 2008-05-28 三菱電機株式会社 半導体回路
JP2005005446A (ja) * 2003-06-11 2005-01-06 Renesas Technology Corp 半導体装置およびその製造方法
US7489490B2 (en) * 2006-06-07 2009-02-10 International Rectifier Corporation Current limiting MOSFET structure for solid state relays
US8063443B2 (en) * 2007-10-30 2011-11-22 Fairchild Semiconductor Corporation Hybrid-mode LDMOS
JP4632068B2 (ja) * 2008-05-30 2011-02-16 三菱電機株式会社 半導体装置
US7989875B2 (en) * 2008-11-24 2011-08-02 Nxp B.V. BiCMOS integration of multiple-times-programmable non-volatile memories
JP4822292B2 (ja) * 2008-12-17 2011-11-24 三菱電機株式会社 半導体装置
KR101050761B1 (ko) * 2010-02-19 2011-07-21 경북대학교 산학협력단 배열형 수평 바이폴라 트랜지스터를 이용한 수소이온 감지소자
US8884682B2 (en) * 2011-04-04 2014-11-11 Renesas Electronics Corporation Power semiconductor device
US20130240744A1 (en) * 2011-05-03 2013-09-19 Trusted Semiconductor Solutions, Inc. Neutron detection chip assembly
FR2993406B1 (fr) * 2012-07-13 2014-08-22 Commissariat Energie Atomique Circuit integre sur soi comprenant un transistor bipolaire a tranchees d'isolation de profondeurs distinctes
US9214542B2 (en) * 2013-03-11 2015-12-15 Freescale Semiconductor, Inc. Semiconductor device with integrated electrostatic discharge (ESD) clamp
JP6731846B2 (ja) * 2013-06-20 2020-07-29 ケー．エクランド イノベーション 電荷検出のための集積センサデバイス

Also Published As

Publication number Publication date
FR3048288A1 (fr) 2017-09-01
US20170248543A1 (en) 2017-08-31
US10074649B2 (en) 2018-09-11

Similar Documents

Publication Publication Date Title
TW200636419A (en) Detecting excess current leakage of a CMOS device
US9753172B2 (en) Operation detecting apparatus for vehicle
JP2015187850A5 (ja) タッチセンサ
CN101133335A (zh) 零功率待机模式监视器
TW200603682A (en) Ion balancing sensor
FR3048288B1 (fr) Detecteur electronique integre de variations de potentiel a haute sensibilite
FR2422170A1 (fr) Circuit a jonctions de josephson sensible a la polarite du signal applique
EP3261108B1 (fr) Capteur de détection électrostatique
TW200624845A (en) Low voltage detection circuit
FR2381418A1 (fr) Dispositif de commutation electronique dont la condition de coupure est independante de la tension
FR3071100B1 (fr) Procede de detection d'un amincissement d'un substrat de circuit integre par sa face arriere, et circuit integre correspondant
US8425744B2 (en) Ion sensing circuit
US10914618B2 (en) Readout circuit for sensor and readout method thereof
JP2014142318A (ja) 移動体検出装置
RU2015120684A (ru) Способ управления подачей тока в многофункциональных системах
KR101729685B1 (ko) 이온 농도 검출 방법 및 장치
RU2017125407A (ru) Система и способ электрохимического измерения аналита
JP2017135702A5 (fr)
IL201223A (en) A device and method for reading electrical currents resulting from electromagnetic signal detectors
FR3040244B1 (fr) Prise electrique comprenant un circuit imprime
US7221208B2 (en) Switching circuit
FR3081223B1 (fr) Dispositif de detection capacitive redondante parallele
Farokhnejad et al. Effect of Schottky barrier contacts on measured capacitances in tunnel-fets
FR3076122B1 (fr) Circuit de controle pour transistor
FR3063387B1 (fr) Composant electronique muni d'un transistor et de doigts interdigites pour former au moins une partie d'un composant capacitif au sein du composant electronique

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20170901

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 5

ST Notification of lapse

Effective date: 20211005