FR3030877A1 - - Google Patents

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Publication number
FR3030877A1
FR3030877A1 FR1563137A FR1563137A FR3030877A1 FR 3030877 A1 FR3030877 A1 FR 3030877A1 FR 1563137 A FR1563137 A FR 1563137A FR 1563137 A FR1563137 A FR 1563137A FR 3030877 A1 FR3030877 A1 FR 3030877A1
Authority
FR
France
Prior art keywords
layer
mesa
group iiia
monocrystalline semiconductor
nitride layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR1563137A
Other languages
English (en)
French (fr)
Other versions
FR3030877B1 (fr
Inventor
Gang Wang
Michael R Seacrist
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
GlobalWafers Co Ltd
Original Assignee
SunEdison Semiconductor Pty Ltd
SunEdison Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Semiconductor Pty Ltd, SunEdison Semiconductor Ltd filed Critical SunEdison Semiconductor Pty Ltd
Publication of FR3030877A1 publication Critical patent/FR3030877A1/fr
Application granted granted Critical
Publication of FR3030877B1 publication Critical patent/FR3030877B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Element Separation (AREA)
FR1563137A 2014-12-22 2015-12-22 Fabrication de couches de nitrure de groupe iiia sur structures de semi-conducteur sur isolant Active FR3030877B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462095282P 2014-12-22 2014-12-22
US62095282 2014-12-22

Publications (2)

Publication Number Publication Date
FR3030877A1 true FR3030877A1 (enExample) 2016-06-24
FR3030877B1 FR3030877B1 (fr) 2019-11-08

Family

ID=55173948

Family Applications (2)

Application Number Title Priority Date Filing Date
FR1563137A Active FR3030877B1 (fr) 2014-12-22 2015-12-22 Fabrication de couches de nitrure de groupe iiia sur structures de semi-conducteur sur isolant
FR1911190A Active FR3087045B1 (fr) 2014-12-22 2019-10-09 Fabrication de couches de nitrure de groupe IIIA sur structures de semi-conducteur sur isolant

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR1911190A Active FR3087045B1 (fr) 2014-12-22 2019-10-09 Fabrication de couches de nitrure de groupe IIIA sur structures de semi-conducteur sur isolant

Country Status (3)

Country Link
US (2) US10262855B2 (enExample)
FR (2) FR3030877B1 (enExample)
WO (1) WO2016106231A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230197788A1 (en) * 2013-02-22 2023-06-22 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
RU2802796C1 (ru) * 2020-07-24 2023-09-04 Общество С Ограниченной Ответственностью "Вандер Технолоджис" Гетероэпитаксиальная структура с алмазным теплоотводом для полупроводниковых приборов и способ ее изготовления

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016106231A1 (en) * 2014-12-22 2016-06-30 Sunedison Semiconductor Limited Manufacture of group iiia-nitride layers on semiconductor on insulator structures
US10302864B2 (en) * 2016-06-02 2019-05-28 Ohio State Innovation Foundation Method of forming a deterministic thin film from a crystal substrate by etching a bilayer bonding interface to create a channel
US20180019169A1 (en) * 2016-07-12 2018-01-18 QMAT, Inc. Backing substrate stabilizing donor substrate for implant or reclamation
US10186630B2 (en) * 2016-08-02 2019-01-22 QMAT, Inc. Seed wafer for GaN thickening using gas- or liquid-phase epitaxy
WO2018087704A2 (en) * 2016-11-11 2018-05-17 QMAT, Inc. Micro-light emitting diode (led) fabrication by layer transfer
KR102614121B1 (ko) * 2016-11-24 2023-12-14 현대자동차주식회사 클러치
CN109273526B (zh) * 2018-10-24 2024-06-14 江西华讯方舟智能技术有限公司 一种高性能晶体管及其制造方法
CN111362701B (zh) * 2018-12-25 2022-01-07 比亚迪股份有限公司 一种碳化硅晶块的制备装置、碳化硅晶块及其制备方法
EP4324019A4 (en) * 2021-04-16 2025-03-26 Tectus Corporation SILICON DOUBLE WAFER SUSTRATES FOR GALLIUM NITRIDE LEDS
JP7295351B1 (ja) * 2021-09-22 2023-06-20 日本碍子株式会社 支持基板と１３族元素窒化物結晶基板との貼り合わせ基板

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US262855A (en) * 1882-08-15 Pipe-coupling
US483379A (en) * 1892-09-27 Spoon
JP2617798B2 (ja) 1989-09-22 1997-06-04 三菱電機株式会社 積層型半導体装置およびその製造方法
US6982460B1 (en) * 2000-07-07 2006-01-03 International Business Machines Corporation Self-aligned gate MOSFET with separate gates
US20080071701A1 (en) 2006-09-14 2008-03-20 Lehman Brothers Inc. Methods and Systems for Providing Swap Indices
US8236638B2 (en) * 2007-04-18 2012-08-07 Freescale Semiconductor, Inc. Shallow trench isolation for SOI structures combining sidewall spacer and bottom liner
KR100901822B1 (ko) 2007-09-11 2009-06-09 주식회사 실트론 질화갈륨 성장용 기판 및 질화갈륨 기판 제조 방법
US7915643B2 (en) * 2007-09-17 2011-03-29 Transphorm Inc. Enhancement mode gallium nitride power devices
US8846505B2 (en) * 2009-03-09 2014-09-30 Skokie Swift Corporation Method of growing semiconductor micro-crystalline islands on an amorphous substrate
TW201108328A (en) 2009-08-21 2011-03-01 Univ Nat Central Method for fabricating a semi-polar nitride semiconductor
JP5627649B2 (ja) 2010-09-07 2014-11-19 株式会社東芝 窒化物半導体結晶層の製造方法
JP5117588B2 (ja) 2010-09-07 2013-01-16 株式会社東芝 窒化物半導体結晶層の製造方法
US8723185B2 (en) 2010-11-30 2014-05-13 Taiwan Semiconductor Manufacturing Company, Ltd. Reducing wafer distortion through a high CTE layer
CN102117869B (zh) 2011-01-21 2013-12-11 厦门市三安光电科技有限公司 一种剥离发光二极管衬底的方法
US8786053B2 (en) * 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
EP2815423B1 (en) * 2012-02-14 2017-05-24 Hexagem AB Gallium nitride nanowire based electronics
US9650723B1 (en) * 2013-04-11 2017-05-16 Soraa, Inc. Large area seed crystal for ammonothermal crystal growth and method of making
US9520695B2 (en) * 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
KR102171286B1 (ko) * 2014-07-11 2020-10-29 삼성전자주식회사 반도체 패키지 및 그 제조방법
US9899499B2 (en) * 2014-09-04 2018-02-20 Sunedison Semiconductor Limited (Uen201334164H) High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate loss
WO2016106231A1 (en) * 2014-12-22 2016-06-30 Sunedison Semiconductor Limited Manufacture of group iiia-nitride layers on semiconductor on insulator structures

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230197788A1 (en) * 2013-02-22 2023-06-22 Micron Technology, Inc. Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
RU2802796C1 (ru) * 2020-07-24 2023-09-04 Общество С Ограниченной Ответственностью "Вандер Технолоджис" Гетероэпитаксиальная структура с алмазным теплоотводом для полупроводниковых приборов и способ ее изготовления

Also Published As

Publication number Publication date
FR3030877B1 (fr) 2019-11-08
FR3087045B1 (fr) 2023-02-24
WO2016106231A1 (en) 2016-06-30
US20190206675A1 (en) 2019-07-04
FR3087045A1 (fr) 2020-04-10
US20180005815A1 (en) 2018-01-04
US10796905B2 (en) 2020-10-06
US10262855B2 (en) 2019-04-16

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