FR3026892B1 - Transistor a effet de champ avec contact de drain mixte optimise et procede de fabrication - Google Patents

Transistor a effet de champ avec contact de drain mixte optimise et procede de fabrication

Info

Publication number
FR3026892B1
FR3026892B1 FR1402238A FR1402238A FR3026892B1 FR 3026892 B1 FR3026892 B1 FR 3026892B1 FR 1402238 A FR1402238 A FR 1402238A FR 1402238 A FR1402238 A FR 1402238A FR 3026892 B1 FR3026892 B1 FR 3026892B1
Authority
FR
France
Prior art keywords
manufacture
field effect
effect transistor
drain contact
mixed drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1402238A
Other languages
English (en)
French (fr)
Other versions
FR3026892A1 (fr
Inventor
Sylvain Delage
Bernard Carnez
Raphael Aubry
Olivier Jardel
Nicolas Michel
Mourad Oualli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thales SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thales SA filed Critical Thales SA
Priority to FR1402238A priority Critical patent/FR3026892B1/fr
Priority to EP15774593.6A priority patent/EP3201949A1/fr
Priority to CN201580060895.0A priority patent/CN107078153A/zh
Priority to PCT/EP2015/072624 priority patent/WO2016050879A1/fr
Publication of FR3026892A1 publication Critical patent/FR3026892A1/fr
Application granted granted Critical
Publication of FR3026892B1 publication Critical patent/FR3026892B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1402238A 2014-10-03 2014-10-03 Transistor a effet de champ avec contact de drain mixte optimise et procede de fabrication Active FR3026892B1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
FR1402238A FR3026892B1 (fr) 2014-10-03 2014-10-03 Transistor a effet de champ avec contact de drain mixte optimise et procede de fabrication
EP15774593.6A EP3201949A1 (fr) 2014-10-03 2015-09-30 Transistor à effet de champ avec contact de drain mixte optimisé et procédé de fabrication
CN201580060895.0A CN107078153A (zh) 2014-10-03 2015-09-30 具有优化的混合漏极接触的场效应晶体管及其制造方法
PCT/EP2015/072624 WO2016050879A1 (fr) 2014-10-03 2015-09-30 Transistor à effet de champ avec contact de drain mixte optimisé et procédé de fabrication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1402238A FR3026892B1 (fr) 2014-10-03 2014-10-03 Transistor a effet de champ avec contact de drain mixte optimise et procede de fabrication

Publications (2)

Publication Number Publication Date
FR3026892A1 FR3026892A1 (fr) 2016-04-08
FR3026892B1 true FR3026892B1 (fr) 2017-12-01

Family

ID=52779682

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1402238A Active FR3026892B1 (fr) 2014-10-03 2014-10-03 Transistor a effet de champ avec contact de drain mixte optimise et procede de fabrication

Country Status (4)

Country Link
EP (1) EP3201949A1 (zh)
CN (1) CN107078153A (zh)
FR (1) FR3026892B1 (zh)
WO (1) WO2016050879A1 (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110190126A (zh) * 2019-04-30 2019-08-30 福建省福联集成电路有限公司 一种抗反激信号的半导体器件及制作方法
US11145735B2 (en) * 2019-10-11 2021-10-12 Raytheon Company Ohmic alloy contact region sealing layer
CN111952356A (zh) * 2020-07-13 2020-11-17 中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室）） Hemt器件结构及其制备方法
CN117133805A (zh) * 2023-10-16 2023-11-28 重庆邮电大学 一种混合漏极增强型GaN高电子迁移率晶体管

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS546777A (en) * 1977-06-17 1979-01-19 Nec Corp Field effect type transistor
JP2577719B2 (ja) * 1984-07-06 1997-02-05 テキサス インスツルメンツ インコ−ポレイテツド 電界効果トランジスタのソース電極構造
JPH03238831A (ja) * 1990-02-15 1991-10-24 Nec Corp 化合物半導体電界効果トランジスタ
JP2008098400A (ja) * 2006-10-12 2008-04-24 Mitsubishi Electric Corp 電界効果型トランジスタ及びその製造方法
US8564020B2 (en) * 2009-07-27 2013-10-22 The Hong Kong University Of Science And Technology Transistors and rectifiers utilizing hybrid electrodes and methods of fabricating the same
KR101120921B1 (ko) * 2010-03-25 2012-02-27 삼성전기주식회사 반도체 소자 및 그 제조 방법
JP5866766B2 (ja) * 2011-02-10 2016-02-17 富士通株式会社 化合物半導体装置及びその製造方法
KR20120120828A (ko) * 2011-04-25 2012-11-02 삼성전기주식회사 질화물 반도체 소자 및 그 제조방법
CN102810559A (zh) * 2012-08-21 2012-12-05 中山大学 一种兼具反向导通的异质结构场效应晶体管及其制作方法
CN104037212B (zh) * 2013-03-05 2019-03-22 首尔半导体株式会社 氮化物半导体元件及其制造方法

Also Published As

Publication number Publication date
CN107078153A (zh) 2017-08-18
WO2016050879A1 (fr) 2016-04-07
FR3026892A1 (fr) 2016-04-08
EP3201949A1 (fr) 2017-08-09

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