FR2905799B1 - Realisation d'un substrat en gan - Google Patents

Realisation d'un substrat en gan

Info

Publication number
FR2905799B1
FR2905799B1 FR0607950A FR0607950A FR2905799B1 FR 2905799 B1 FR2905799 B1 FR 2905799B1 FR 0607950 A FR0607950 A FR 0607950A FR 0607950 A FR0607950 A FR 0607950A FR 2905799 B1 FR2905799 B1 FR 2905799B1
Authority
FR
France
Prior art keywords
implementing
gan substrate
gan
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0607950A
Other languages
English (en)
Other versions
FR2905799A1 (fr
Inventor
Bruce Faure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR0607950A priority Critical patent/FR2905799B1/fr
Priority to PCT/EP2007/059500 priority patent/WO2008031809A1/fr
Priority to KR1020097007430A priority patent/KR101236213B1/ko
Priority to EP07820110A priority patent/EP2070111A1/fr
Priority to JP2009527158A priority patent/JP2010502555A/ja
Priority to US12/310,345 priority patent/US8263984B2/en
Publication of FR2905799A1 publication Critical patent/FR2905799A1/fr
Application granted granted Critical
Publication of FR2905799B1 publication Critical patent/FR2905799B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02389—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02634—Homoepitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
FR0607950A 2006-09-12 2006-09-12 Realisation d'un substrat en gan Active FR2905799B1 (fr)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FR0607950A FR2905799B1 (fr) 2006-09-12 2006-09-12 Realisation d'un substrat en gan
PCT/EP2007/059500 WO2008031809A1 (fr) 2006-09-12 2007-09-11 PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE GaN
KR1020097007430A KR101236213B1 (ko) 2006-09-12 2007-09-11 질화갈륨 기판을 형성하기 위한 프로세스
EP07820110A EP2070111A1 (fr) 2006-09-12 2007-09-11 PROCÉDÉ DE FABRICATION D'UN SUBSTRAT DE GaN
JP2009527158A JP2010502555A (ja) 2006-09-12 2007-09-11 ＧａＮ基板の製造方法
US12/310,345 US8263984B2 (en) 2006-09-12 2007-11-11 Process for making a GaN substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0607950A FR2905799B1 (fr) 2006-09-12 2006-09-12 Realisation d'un substrat en gan

Publications (2)

Publication Number Publication Date
FR2905799A1 FR2905799A1 (fr) 2008-03-14
FR2905799B1 true FR2905799B1 (fr) 2008-12-26

Family

ID=37946233

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0607950A Active FR2905799B1 (fr) 2006-09-12 2006-09-12 Realisation d'un substrat en gan

Country Status (6)

Country Link
US (1) US8263984B2 (fr)
EP (1) EP2070111A1 (fr)
JP (1) JP2010502555A (fr)
KR (1) KR101236213B1 (fr)
FR (1) FR2905799B1 (fr)
WO (1) WO2008031809A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103180494A (zh) * 2011-10-07 2013-06-26 住友电气工业株式会社 GaN基膜的制造方法及为此使用的复合衬底
JP6019928B2 (ja) * 2011-10-07 2016-11-02 住友電気工業株式会社 ＧａＮ系膜の製造方法およびそれに用いられる複合基板
KR20150138479A (ko) 2014-05-29 2015-12-10 삼성전자주식회사 발광 소자 패키지의 제조 방법
WO2021046233A1 (fr) 2019-09-03 2021-03-11 Cancer Targeted Technology Llc Inhibiteurs de psma contenant un chélate
US11652146B2 (en) 2020-02-07 2023-05-16 Rfhic Corporation Method of forming a semiconductor wafer containing a gallium-nitride layer and two diamond layers

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3904449A (en) * 1974-05-09 1975-09-09 Bell Telephone Labor Inc Growth technique for high efficiency gallium arsenide impatt diodes
JPS60150450A (ja) * 1984-01-18 1985-08-08 Honda Motor Co Ltd 内燃エンジンのアイドル回転数フイ−ドバツク制御方法
CN100344004C (zh) * 1997-10-30 2007-10-17 住友电气工业株式会社 GaN单晶衬底及其制造方法
US6911707B2 (en) * 1998-12-09 2005-06-28 Advanced Micro Devices, Inc. Ultrathin high-K gate dielectric with favorable interface properties for improved semiconductor device performance
JP3615081B2 (ja) * 1999-03-30 2005-01-26 古河電気工業株式会社 ＧａＮ単結晶の作製方法
JP3968968B2 (ja) 2000-07-10 2007-08-29 住友電気工業株式会社 単結晶ＧａＮ基板の製造方法
FR2835096B1 (fr) * 2002-01-22 2005-02-18 Procede de fabrication d'un substrat auto-porte en materiau semi-conducteur monocristallin
US6649494B2 (en) * 2001-01-29 2003-11-18 Matsushita Electric Industrial Co., Ltd. Manufacturing method of compound semiconductor wafer
FR2843626B1 (fr) 2002-08-14 2005-03-11 Cryospace L Air Liquide Aerosp Dispositif de support susceptible de proteger au moins un equipement de forme lineaire contre des sollicitations aerothermiques
FR2843826B1 (fr) * 2002-08-26 2006-12-22 Recyclage d'une plaquette comprenant une couche tampon, apres y avoir preleve une couche mince
JPWO2005022610A1 (ja) * 2003-09-01 2007-11-01 株式会社Sumco 貼り合わせウェーハの製造方法
JP2005209803A (ja) * 2004-01-21 2005-08-04 Sumitomo Electric Ind Ltd ＧａＮ結晶基板の製造方法
FR2877491B1 (fr) * 2004-10-29 2007-01-19 Soitec Silicon On Insulator Structure composite a forte dissipation thermique
WO2006082467A1 (fr) * 2005-02-01 2006-08-10 S.O.I.Tec Silicon On Insulator Technologies Substrat destine a la cristallogenese d'un semi-conducteur de nitrure

Also Published As

Publication number Publication date
KR101236213B1 (ko) 2013-02-22
US20100012947A1 (en) 2010-01-21
FR2905799A1 (fr) 2008-03-14
KR20090060343A (ko) 2009-06-11
US8263984B2 (en) 2012-09-11
WO2008031809A1 (fr) 2008-03-20
EP2070111A1 (fr) 2009-06-17
JP2010502555A (ja) 2010-01-28

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