FR2844384B1 - Memoire flash capable de reduire le courant de crete - Google Patents

Memoire flash capable de reduire le courant de crete

Info

Publication number
FR2844384B1
FR2844384B1 FR0310374A FR0310374A FR2844384B1 FR 2844384 B1 FR2844384 B1 FR 2844384B1 FR 0310374 A FR0310374 A FR 0310374A FR 0310374 A FR0310374 A FR 0310374A FR 2844384 B1 FR2844384 B1 FR 2844384B1
Authority
FR
France
Prior art keywords
crete
reducing
current
flash memory
memory capable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR0310374A
Other languages
English (en)
Other versions
FR2844384A1 (fr
Inventor
Chang Ho You
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2844384A1 publication Critical patent/FR2844384A1/fr
Application granted granted Critical
Publication of FR2844384B1 publication Critical patent/FR2844384B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
FR0310374A 2002-09-04 2003-09-02 Memoire flash capable de reduire le courant de crete Expired - Lifetime FR2844384B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2002-0053120A KR100476930B1 (ko) 2002-09-04 2002-09-04 피이크전류를 줄이는 플래쉬메모리

Publications (2)

Publication Number Publication Date
FR2844384A1 FR2844384A1 (fr) 2004-03-12
FR2844384B1 true FR2844384B1 (fr) 2006-04-14

Family

ID=31884998

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0310374A Expired - Lifetime FR2844384B1 (fr) 2002-09-04 2003-09-02 Memoire flash capable de reduire le courant de crete

Country Status (3)

Country Link
US (1) US6950346B2 (fr)
KR (1) KR100476930B1 (fr)
FR (1) FR2844384B1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7734464B2 (en) * 2005-05-20 2010-06-08 Tektronix, Inc. RF autocorrelation signal trigger generator
KR100736408B1 (ko) * 2006-06-10 2007-07-09 삼성전자주식회사 비트 라인의 전압 강하를 보상할 수 있는 반도체 장치와 그보상 방법
US7345916B2 (en) * 2006-06-12 2008-03-18 Spansion Llc Method and apparatus for high voltage operation for a high performance semiconductor memory device
KR100822805B1 (ko) 2006-10-20 2008-04-18 삼성전자주식회사 다중 배속 동작 모드를 가지는 플래시 메모리 장치
US7679967B2 (en) * 2007-12-21 2010-03-16 Spansion Llc Controlling AC disturbance while programming
US7719902B2 (en) * 2008-05-23 2010-05-18 Sandisk Corporation Enhanced bit-line pre-charge scheme for increasing channel boosting in non-volatile storage
KR102081757B1 (ko) 2013-06-26 2020-02-26 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
JP6756878B1 (ja) * 2019-06-17 2020-09-16 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
JP6781301B1 (ja) 2019-06-17 2020-11-04 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5343433A (en) * 1984-08-02 1994-08-30 Texas Instruments Incorporated CMOS sense amplifier
JPS6425394A (en) * 1987-07-21 1989-01-27 Mitsubishi Electric Corp Nonvolatile semiconductor memory device
JP3062730B2 (ja) * 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
KR100190089B1 (ko) * 1996-08-30 1999-06-01 윤종용 플래쉬 메모리장치 및 그 구동방법
KR100252476B1 (ko) * 1997-05-19 2000-04-15 윤종용 플레이트 셀 구조의 전기적으로 소거 및 프로그램 가능한 셀들을 구비한 불 휘발성 반도체 메모리 장치및 그것의 프로그램 방법
JP3425340B2 (ja) * 1997-10-09 2003-07-14 株式会社東芝 不揮発性半導体記憶装置
JP3123968B2 (ja) * 1998-02-04 2001-01-15 九州日本電気株式会社 半導体記憶装置
KR100293634B1 (ko) * 1998-03-26 2001-07-12 박종섭 플래쉬 메모리 장치의 소거 제어 회로
JP3614747B2 (ja) * 2000-03-07 2005-01-26 Ｎｅｃエレクトロニクス株式会社 昇圧回路、それを搭載したｉｃカード及びそれを搭載した電子機器
JP4044755B2 (ja) * 2000-12-12 2008-02-06 三星電子株式会社 不揮発性半導体メモリ装置及びそれのプログラム方法
US6480419B2 (en) 2001-02-22 2002-11-12 Samsung Electronics Co., Ltd. Bit line setup and discharge circuit for programming non-volatile memory
US6438032B1 (en) * 2001-03-27 2002-08-20 Micron Telecommunications, Inc. Non-volatile memory with peak current noise reduction

Also Published As

Publication number Publication date
KR20040021773A (ko) 2004-03-11
KR100476930B1 (ko) 2005-03-16
US6950346B2 (en) 2005-09-27
US20040042324A1 (en) 2004-03-04
FR2844384A1 (fr) 2004-03-12

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