FR2778494B1 - Procede de formation d'une structure a double incrustation pour un circuit integre - Google Patents
Procede de formation d'une structure a double incrustation pour un circuit integreInfo
- Publication number
- FR2778494B1 FR2778494B1 FR9808394A FR9808394A FR2778494B1 FR 2778494 B1 FR2778494 B1 FR 2778494B1 FR 9808394 A FR9808394 A FR 9808394A FR 9808394 A FR9808394 A FR 9808394A FR 2778494 B1 FR2778494 B1 FR 2778494B1
- Authority
- FR
- France
- Prior art keywords
- double
- forming
- integrated circuit
- inclusive structure
- inclusive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW87106886 | 1998-05-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2778494A1 FR2778494A1 (fr) | 1999-11-12 |
FR2778494B1 true FR2778494B1 (fr) | 2000-06-23 |
Family
ID=21630039
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9808394A Expired - Fee Related FR2778494B1 (fr) | 1998-05-05 | 1998-07-01 | Procede de formation d'une structure a double incrustation pour un circuit integre |
Country Status (4)
Country | Link |
---|---|
US (1) | US6001735A (fr) |
JP (1) | JPH11330077A (fr) |
DE (1) | DE19829152A1 (fr) |
FR (1) | FR2778494B1 (fr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW383463B (en) * | 1998-06-01 | 2000-03-01 | United Microelectronics Corp | Manufacturing method for dual damascene structure |
US6207545B1 (en) * | 1998-11-30 | 2001-03-27 | Taiwan Semiconductor Manufacturing Corporation | Method for forming a T-shaped plug having increased contact area |
KR100280288B1 (ko) | 1999-02-04 | 2001-01-15 | 윤종용 | 반도체 집적회로의 커패시터 제조방법 |
US6140220A (en) * | 1999-07-08 | 2000-10-31 | Industrial Technology Institute Reseach | Dual damascene process and structure with dielectric barrier layer |
US6174808B1 (en) * | 1999-08-04 | 2001-01-16 | Taiwan Semiconductor Manufacturing Company | Intermetal dielectric using HDP-CVD oxide and SACVD O3-TEOS |
US8883638B2 (en) * | 2012-01-18 | 2014-11-11 | United Microelectronics Corp. | Method for manufacturing damascene structure involving dummy via holes |
GB2575888B (en) | 2018-10-03 | 2020-09-23 | X Fab Sarawak Sdn Bhd | Improvements relating to passivation layers |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4789648A (en) * | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
US4671851A (en) * | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
JP2556138B2 (ja) * | 1989-06-30 | 1996-11-20 | 日本電気株式会社 | 半導体装置の製造方法 |
US5420067A (en) * | 1990-09-28 | 1995-05-30 | The United States Of America As Represented By The Secretary Of The Navy | Method of fabricatring sub-half-micron trenches and holes |
JP2665568B2 (ja) * | 1990-11-21 | 1997-10-22 | シャープ株式会社 | 半導体装置の製造方法 |
US5246884A (en) * | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
DE4435586A1 (de) * | 1994-10-05 | 1996-04-11 | Itt Ind Gmbh Deutsche | Verfahren zum Planarisieren von Oberflächen integrierter Halbleiterschaltungen |
US5635423A (en) * | 1994-10-11 | 1997-06-03 | Advanced Micro Devices, Inc. | Simplified dual damascene process for multi-level metallization and interconnection structure |
US5614765A (en) * | 1995-06-07 | 1997-03-25 | Advanced Micro Devices, Inc. | Self aligned via dual damascene |
US5705430A (en) * | 1995-06-07 | 1998-01-06 | Advanced Micro Devices, Inc. | Dual damascene with a sacrificial via fill |
US5834159A (en) * | 1996-04-22 | 1998-11-10 | Advanced Micro Devices, Inc. | Image reversal technique for forming small structures in integrated circuits |
US5723358A (en) * | 1996-04-29 | 1998-03-03 | Vlsi Technology, Inc. | Method of manufacturing amorphous silicon antifuse structures |
US5814557A (en) * | 1996-05-20 | 1998-09-29 | Motorola, Inc. | Method of forming an interconnect structure |
KR0184158B1 (ko) * | 1996-07-13 | 1999-04-15 | 문정환 | 반도체장치의 자기 정합정 금속 배선 형성 방법 |
US5789315A (en) * | 1996-07-17 | 1998-08-04 | Advanced Micro Devices, Inc. | Eliminating metal extrusions by controlling the liner deposition temperature |
KR100219508B1 (ko) * | 1996-12-30 | 1999-09-01 | 윤종용 | 반도체장치의 금속배선층 형성방법 |
US5801094A (en) * | 1997-02-28 | 1998-09-01 | United Microelectronics Corporation | Dual damascene process |
US5906911A (en) * | 1997-03-28 | 1999-05-25 | International Business Machines Corporation | Process of forming a dual damascene structure in a single photoresist film |
US5814564A (en) * | 1997-05-15 | 1998-09-29 | Vanguard International Semiconductor Corporation | Etch back method to planarize an interlayer having a critical HDP-CVD deposition process |
US5891799A (en) * | 1997-08-18 | 1999-04-06 | Industrial Technology Research Institute | Method for making stacked and borderless via structures for multilevel metal interconnections on semiconductor substrates |
US5882996A (en) * | 1997-10-14 | 1999-03-16 | Industrial Technology Research Institute | Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer |
US5877075A (en) * | 1997-10-14 | 1999-03-02 | Industrial Technology Research Institute | Dual damascene process using single photoresist process |
-
1998
- 1998-06-30 DE DE19829152A patent/DE19829152A1/de not_active Ceased
- 1998-07-01 JP JP10186244A patent/JPH11330077A/ja active Pending
- 1998-07-01 FR FR9808394A patent/FR2778494B1/fr not_active Expired - Fee Related
- 1998-07-06 US US09/110,545 patent/US6001735A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US6001735A (en) | 1999-12-14 |
JPH11330077A (ja) | 1999-11-30 |
FR2778494A1 (fr) | 1999-11-12 |
DE19829152A1 (de) | 1999-11-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |