FR2741192B1 - Procede de conception et de fabrication de circuits integres et circuits integres realises selon ce procede - Google Patents

Procede de conception et de fabrication de circuits integres et circuits integres realises selon ce procede

Info

Publication number
FR2741192B1
FR2741192B1 FR9609594A FR9609594A FR2741192B1 FR 2741192 B1 FR2741192 B1 FR 2741192B1 FR 9609594 A FR9609594 A FR 9609594A FR 9609594 A FR9609594 A FR 9609594A FR 2741192 B1 FR2741192 B1 FR 2741192B1
Authority
FR
France
Prior art keywords
integrated circuits
procedure
design
manufacturing process
made according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9609594A
Other languages
English (en)
Other versions
FR2741192A1 (fr
Inventor
Minkyu Song
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2741192A1 publication Critical patent/FR2741192A1/fr
Application granted granted Critical
Publication of FR2741192B1 publication Critical patent/FR2741192B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/923—Active solid-state devices, e.g. transistors, solid-state diodes with means to optimize electrical conductor current carrying capacity, e.g. particular conductor aspect ratio

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Optics & Photonics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR9609594A 1995-11-10 1996-07-30 Procede de conception et de fabrication de circuits integres et circuits integres realises selon ce procede Expired - Fee Related FR2741192B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040800A KR0182006B1 (ko) 1995-11-10 1995-11-10 반도체 패키지 장치 및 몰딩물질에 의해 발생하는 기생용량의 산출방법

Publications (2)

Publication Number Publication Date
FR2741192A1 FR2741192A1 (fr) 1997-05-16
FR2741192B1 true FR2741192B1 (fr) 2001-11-23

Family

ID=19433740

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9609594A Expired - Fee Related FR2741192B1 (fr) 1995-11-10 1996-07-30 Procede de conception et de fabrication de circuits integres et circuits integres realises selon ce procede

Country Status (7)

Country Link
US (2) US5808366A (fr)
JP (1) JPH09148428A (fr)
KR (1) KR0182006B1 (fr)
CN (1) CN1134841C (fr)
FR (1) FR2741192B1 (fr)
GB (1) GB2307101B (fr)
TW (1) TW320755B (fr)

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US6752584B2 (en) 1996-07-15 2004-06-22 Semitool, Inc. Transfer devices for handling microelectronic workpieces within an environment of a processing machine and methods of manufacturing and using such devices in the processing of microelectronic workpieces
US6749390B2 (en) 1997-12-15 2004-06-15 Semitool, Inc. Integrated tools with transfer devices for handling microelectronic workpieces
US6921467B2 (en) * 1996-07-15 2005-07-26 Semitool, Inc. Processing tools, components of processing tools, and method of making and using same for electrochemical processing of microelectronic workpieces
US6749391B2 (en) 1996-07-15 2004-06-15 Semitool, Inc. Microelectronic workpiece transfer devices and methods of using such devices in the processing of microelectronic workpieces
TWI223678B (en) * 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6497801B1 (en) * 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US6161215A (en) * 1998-08-31 2000-12-12 Hewlett-Packard Company Package routing of integrated circuit signals
US6916412B2 (en) * 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
US7585398B2 (en) * 1999-04-13 2009-09-08 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
EP1194613A4 (fr) * 1999-04-13 2006-08-23 Semitool Inc Processeur de pieces comportant une chambre de traitement a ecoulement de fluide de traitement ameliore
US7020537B2 (en) * 1999-04-13 2006-03-28 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7264698B2 (en) * 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6368475B1 (en) * 2000-03-21 2002-04-09 Semitool, Inc. Apparatus for electrochemically processing a microelectronic workpiece
US7160421B2 (en) * 1999-04-13 2007-01-09 Semitool, Inc. Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7438788B2 (en) * 1999-04-13 2008-10-21 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
US7189318B2 (en) * 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6623609B2 (en) 1999-07-12 2003-09-23 Semitool, Inc. Lift and rotate assembly for use in a workpiece processing station and a method of attaching the same
US6862720B1 (en) * 1999-10-28 2005-03-01 National Semiconductor Corporation Interconnect exhibiting reduced parasitic capacitance variation
US20050183959A1 (en) * 2000-04-13 2005-08-25 Wilson Gregory J. Tuning electrodes used in a reactor for electrochemically processing a microelectric workpiece
US6366131B1 (en) 2000-05-01 2002-04-02 Hewlett-Packard Company System and method for increasing a drive signal and decreasing a pin count
AU2001259504A1 (en) * 2000-05-24 2001-12-03 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7102763B2 (en) * 2000-07-08 2006-09-05 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
US6662091B2 (en) 2001-06-29 2003-12-09 Battelle Memorial Institute Diagnostics/prognostics using wireless links
EP1405044A1 (fr) 2001-07-02 2004-04-07 Battelle Memorial Institute Module de microcapteurs intelligents
KR100396900B1 (ko) * 2001-12-11 2003-09-02 삼성전자주식회사 반도체 집적 회로의 배선 캐패시턴스 추출 방법 및 이를기록한 기록 매체
US6630360B2 (en) 2002-01-10 2003-10-07 Advanced Micro Devices, Inc. Advanced process control (APC) of copper thickness for chemical mechanical planarization (CMP) optimization
US20030159921A1 (en) * 2002-02-22 2003-08-28 Randy Harris Apparatus with processing stations for manually and automatically processing microelectronic workpieces
US6991710B2 (en) * 2002-02-22 2006-01-31 Semitool, Inc. Apparatus for manually and automatically processing microelectronic workpieces
US6893505B2 (en) * 2002-05-08 2005-05-17 Semitool, Inc. Apparatus and method for regulating fluid flows, such as flows of electrochemical processing fluids
US7114903B2 (en) * 2002-07-16 2006-10-03 Semitool, Inc. Apparatuses and method for transferring and/or pre-processing microelectronic workpieces
US20050092611A1 (en) * 2003-11-03 2005-05-05 Semitool, Inc. Bath and method for high rate copper deposition
CN102854398B (zh) * 2012-08-23 2016-12-21 上海华虹宏力半导体制造有限公司 寄生电容的测量方法以及栅介质层厚度的计算方法
US11933863B2 (en) 2020-07-27 2024-03-19 Changxin Memory Technologies, Inc. Method for measuring shortest distance between capacitances and method for evaluating capacitance manufacture procedure
CN114001692B (zh) * 2020-07-27 2023-04-07 长鑫存储技术有限公司 测量电容之间最短距离的方法及评价电容制程的方法

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Also Published As

Publication number Publication date
TW320755B (fr) 1997-11-21
GB9613883D0 (en) 1996-09-04
US6028986A (en) 2000-02-22
CN1150332A (zh) 1997-05-21
FR2741192A1 (fr) 1997-05-16
CN1134841C (zh) 2004-01-14
KR970030683A (ko) 1997-06-26
GB2307101A (en) 1997-05-14
KR0182006B1 (ko) 1999-04-15
US5808366A (en) 1998-09-15
GB2307101B (en) 2000-11-22
JPH09148428A (ja) 1997-06-06

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Legal Events

Date Code Title Description
TP Transmission of property

Owner name: MOSAID TECHNOLOGIES INCORPORATED, CA

Effective date: 20111110

CA Change of address

Effective date: 20141021

CD Change of name or company name

Owner name: CONVERSANT INTELLECTUAL PROPERTY MANAGEMENT IN, CA

Effective date: 20141021

ST Notification of lapse

Effective date: 20160331