FR2728390B1 - - Google Patents

Info

Publication number
FR2728390B1
FR2728390B1 FR9415630A FR9415630A FR2728390B1 FR 2728390 B1 FR2728390 B1 FR 2728390B1 FR 9415630 A FR9415630 A FR 9415630A FR 9415630 A FR9415630 A FR 9415630A FR 2728390 B1 FR2728390 B1 FR 2728390B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR9415630A
Other versions
FR2728390A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pendragon Electronics And Telecommunications R Us
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to FR9415630A priority Critical patent/FR2728390A1/fr
Priority to DE4445568A priority patent/DE4445568C2/de
Publication of FR2728390A1 publication Critical patent/FR2728390A1/fr
Priority to US08/796,141 priority patent/US5733793A/en
Application granted granted Critical
Publication of FR2728390B1 publication Critical patent/FR2728390B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/909—Controlled atmosphere

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
FR9415630A 1994-12-19 1994-12-19 Procede de formation d'un transistor a film mince Granted FR2728390A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR9415630A FR2728390A1 (fr) 1994-12-19 1994-12-19 Procede de formation d'un transistor a film mince
DE4445568A DE4445568C2 (de) 1994-12-19 1994-12-20 Verfahren zur Herstellung eines Dünnfilmtransistors
US08/796,141 US5733793A (en) 1994-12-19 1997-02-06 Process formation of a thin film transistor

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR9415630A FR2728390A1 (fr) 1994-12-19 1994-12-19 Procede de formation d'un transistor a film mince
DE4445568A DE4445568C2 (de) 1994-12-19 1994-12-20 Verfahren zur Herstellung eines Dünnfilmtransistors
US08/796,141 US5733793A (en) 1994-12-19 1997-02-06 Process formation of a thin film transistor

Publications (2)

Publication Number Publication Date
FR2728390A1 FR2728390A1 (fr) 1996-06-21
FR2728390B1 true FR2728390B1 (fr) 1997-02-07

Family

ID=27207085

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9415630A Granted FR2728390A1 (fr) 1994-12-19 1994-12-19 Procede de formation d'un transistor a film mince

Country Status (3)

Country Link
US (1) US5733793A (fr)
DE (1) DE4445568C2 (fr)
FR (1) FR2728390A1 (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0766424A (ja) * 1993-08-20 1995-03-10 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP3424891B2 (ja) 1996-12-27 2003-07-07 三洋電機株式会社 薄膜トランジスタの製造方法および表示装置
US6431234B1 (en) * 1998-10-30 2002-08-13 Continental Tire North America, Inc. Tire with sloped blocks
US6831299B2 (en) 2000-11-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100437474B1 (ko) * 2001-04-04 2004-06-23 삼성에스디아이 주식회사 듀얼채널층을 갖는 박막 트랜지스터 및 그의 제조방법
JP4321111B2 (ja) * 2003-05-16 2009-08-26 日本電気株式会社 光モジュール、光モジュールとケージとのロック状態を解除する方法
JP4426988B2 (ja) * 2005-03-09 2010-03-03 富士通マイクロエレクトロニクス株式会社 ｐチャネルＭＯＳトランジスタの製造方法
US20070026588A1 (en) * 2005-07-28 2007-02-01 Te-Hua Teng Method of fabricating a thin film transistor
CN103199116B (zh) * 2013-03-29 2016-04-27 京东方科技集团股份有限公司 悬浮栅晶体管及其制作方法、应用方法、显示器驱动电路
CN105785684A (zh) * 2014-12-25 2016-07-20 业鑫科技顾问股份有限公司 薄膜晶体管基板、其制作方法及使用之液晶显示面板
US10276311B2 (en) 2016-08-16 2019-04-30 Electronics And Telecommunications Research Institute Apparatus and method for manufacturing electrodes

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856467A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
JPS60251667A (ja) * 1984-05-28 1985-12-12 Seiko Epson Corp 薄膜トランジスタ−
JP2505736B2 (ja) * 1985-06-18 1996-06-12 キヤノン株式会社 半導体装置の製造方法
US4597160A (en) * 1985-08-09 1986-07-01 Rca Corporation Method of fabricating a polysilicon transistor with a high carrier mobility
JPS63304670A (ja) * 1987-06-04 1988-12-12 Hitachi Ltd 薄膜半導体装置の製造方法
US5248630A (en) * 1987-07-27 1993-09-28 Nippon Telegraph And Telephone Corporation Thin film silicon semiconductor device and process for producing thereof
US4822749A (en) * 1987-08-27 1989-04-18 North American Philips Corporation, Signetics Division Self-aligned metallization for semiconductor device and process using selectively deposited tungsten
JPH01214012A (ja) * 1988-02-22 1989-08-28 Sony Corp 半導体基板
JPH0221663A (ja) * 1988-07-08 1990-01-24 Sharp Corp 薄膜トランジスタの製造方法
JPH02184076A (ja) * 1989-01-11 1990-07-18 Ricoh Co Ltd 薄膜トランジスタの製造方法
EP0598410B1 (fr) * 1989-02-14 2001-05-23 Seiko Epson Corporation Procédé pour fabriquer un dispositif semi-conducteur
JPH034564A (ja) * 1989-06-01 1991-01-10 Seiko Epson Corp 半導体装置の製造方法
US5060035A (en) * 1989-07-13 1991-10-22 Mitsubishi Denki Kabushiki Kaisha Silicon-on-insulator metal oxide semiconductor device having conductive sidewall structure
DE69115118T2 (de) * 1990-05-17 1996-05-30 Sharp Kk Verfahren zum Herstellen eines Dünnfilm-Transistors.
US5254208A (en) * 1990-07-24 1993-10-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
US5112764A (en) * 1990-09-04 1992-05-12 North American Philips Corporation Method for the fabrication of low leakage polysilicon thin film transistors
JP3277548B2 (ja) * 1991-05-08 2002-04-22 セイコーエプソン株式会社 ディスプレイ基板
JP2779289B2 (ja) * 1992-05-11 1998-07-23 シャープ株式会社 薄膜トランジスタの製造方法
US5252502A (en) * 1992-08-03 1993-10-12 Texas Instruments Incorporated Method of making MOS VLSI semiconductor device with metal gate
US5322807A (en) * 1992-08-19 1994-06-21 At&T Bell Laboratories Method of making thin film transistors including recrystallization and high pressure oxidation
JPH0684944A (ja) * 1992-08-31 1994-03-25 Sharp Corp 薄膜トランジスタ
EP0589478B1 (fr) * 1992-09-25 1999-11-17 Sony Corporation Dispositif d'affichage à cristal liquide
JP3193803B2 (ja) * 1993-03-12 2001-07-30 株式会社半導体エネルギー研究所 半導体素子の作製方法

Also Published As

Publication number Publication date
DE4445568A1 (de) 1996-06-27
US5733793A (en) 1998-03-31
DE4445568C2 (de) 2002-11-28
FR2728390A1 (fr) 1996-06-21

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Legal Events

Date Code Title Description
TQ Partial transmission of property
TP Transmission of property

Owner name: PENDRAGON ELECTRONICS AND TELECOMMUNICATIONS R, US

Effective date: 20120730