FR2721946B1 - Procede de procuction de pellicule mince et appareil pour mettre en oeuvre le procede - Google Patents

Procede de procuction de pellicule mince et appareil pour mettre en oeuvre le procede

Info

Publication number
FR2721946B1
FR2721946B1 FR9503695A FR9503695A FR2721946B1 FR 2721946 B1 FR2721946 B1 FR 2721946B1 FR 9503695 A FR9503695 A FR 9503695A FR 9503695 A FR9503695 A FR 9503695A FR 2721946 B1 FR2721946 B1 FR 2721946B1
Authority
FR
France
Prior art keywords
carrying
thin film
film process
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9503695A
Other languages
English (en)
Other versions
FR2721946A1 (fr
Inventor
Yoshiyuki Abe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Publication of FR2721946A1 publication Critical patent/FR2721946A1/fr
Application granted granted Critical
Publication of FR2721946B1 publication Critical patent/FR2721946B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
FR9503695A 1994-06-30 1995-03-29 Procede de procuction de pellicule mince et appareil pour mettre en oeuvre le procede Expired - Fee Related FR2721946B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6148847A JP2590438B2 (ja) 1994-06-30 1994-06-30 薄膜形成方法および薄膜形成装置

Publications (2)

Publication Number Publication Date
FR2721946A1 FR2721946A1 (fr) 1996-01-05
FR2721946B1 true FR2721946B1 (fr) 1998-11-20

Family

ID=15462072

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9503695A Expired - Fee Related FR2721946B1 (fr) 1994-06-30 1995-03-29 Procede de procuction de pellicule mince et appareil pour mettre en oeuvre le procede

Country Status (5)

Country Link
US (1) US5635241A (fr)
JP (1) JP2590438B2 (fr)
DE (1) DE19511783C2 (fr)
FR (1) FR2721946B1 (fr)
GB (1) GB2290801B (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6096998A (en) 1996-09-17 2000-08-01 Micron Technology, Inc. Method and apparatus for performing thermal reflow operations under high gravity conditions
JP4183568B2 (ja) * 2003-05-16 2008-11-19 有限会社日厚計測 高重力場における電極反応装置
DE102004053139A1 (de) * 2004-11-03 2006-06-01 Süss Microtec Lithography Gmbh Drehbare Vorrichtung zum Halten eines Substrats

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB863881A (en) * 1958-01-27 1961-03-29 Int Resistance Co Improvements in or relating to methods of coating cylindrical members by thermal evaporation in a vacuum and apparatus for carrying out such methods
GB1284224A (en) * 1968-12-12 1972-08-02 Edwards High Vacuum Int Ltd Radio frequency sputtering apparatus
US4116161A (en) * 1976-11-12 1978-09-26 Mcdonnell Douglas Corporation Dual tumbling barrel plating apparatus
JPS5515673A (en) * 1978-07-21 1980-02-02 Hitachi Zosen Corp Chemical reaction inducing method
JPS6110827A (ja) * 1984-06-27 1986-01-18 Matsushita Electronics Corp 陰極線管螢光体膜の形成方法
JPS62107059A (ja) * 1985-11-01 1987-05-18 Matsushita Electric Ind Co Ltd 薄膜形成方法及び薄膜形成装置
US5012158A (en) * 1986-07-25 1991-04-30 National Research Institute For Metals Plasma CVD apparatus
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
JPS63100972A (ja) * 1986-10-16 1988-05-06 Toshiba Corp 塗布装置
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
JP2720464B2 (ja) * 1988-07-26 1998-03-04 松下電器産業株式会社 金属薄膜の形成方法及び形成装置
JPH0368767A (ja) * 1989-06-29 1991-03-25 Mitsubishi Electric Corp 半導体製造装置
EP0409451A1 (fr) * 1989-07-18 1991-01-23 Optical Coating Laboratory, Inc. Procédé pour déposer des couches minces optiques sur des substrats plans ou non plans
JP2600085B2 (ja) * 1989-12-08 1997-04-16 工業技術院長 酸化物超電導体の製造方法
DE4010663C2 (de) * 1990-04-03 1998-07-23 Leybold Ag Vorrichtung und Verfahren zur plasmagestützten Beschichtung von Werkstücken
US5196101A (en) * 1991-02-05 1993-03-23 Califoria Institute Of Technology Deposition of thin films of multicomponent materials
JPH053257A (ja) * 1991-06-25 1993-01-08 Kawasaki Steel Corp 半導体装置の被膜形成方法
JP2751975B2 (ja) * 1991-12-20 1998-05-18 株式会社日立製作所 半導体処理装置のロードロック室
US5198272A (en) * 1992-03-24 1993-03-30 Davidson Textron Inc. Thermal evaporation in two planes
DE4209384C1 (fr) * 1992-03-23 1993-04-22 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De

Also Published As

Publication number Publication date
FR2721946A1 (fr) 1996-01-05
GB9506510D0 (en) 1995-05-17
JPH0810609A (ja) 1996-01-16
US5635241A (en) 1997-06-03
GB2290801B (en) 1998-11-25
DE19511783C2 (de) 2002-12-12
GB2290801A (en) 1996-01-10
DE19511783A1 (de) 1996-01-11
JP2590438B2 (ja) 1997-03-12

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20101130