FR2708789B1 - Matériau semi-conducteur thermoélectrique. - Google Patents
Matériau semi-conducteur thermoélectrique.Info
- Publication number
- FR2708789B1 FR2708789B1 FR9409682A FR9409682A FR2708789B1 FR 2708789 B1 FR2708789 B1 FR 2708789B1 FR 9409682 A FR9409682 A FR 9409682A FR 9409682 A FR9409682 A FR 9409682A FR 2708789 B1 FR2708789 B1 FR 2708789B1
- Authority
- FR
- France
- Prior art keywords
- semiconductor material
- thermoelectric semiconductor
- thermoelectric
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12583—Component contains compound of adjacent metal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12674—Ge- or Si-base component
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19362593A JP3348924B2 (ja) | 1993-08-04 | 1993-08-04 | 熱電半導体材料 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2708789A1 FR2708789A1 (fr) | 1995-02-10 |
FR2708789B1 true FR2708789B1 (fr) | 1995-09-22 |
Family
ID=16311056
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9409682A Expired - Lifetime FR2708789B1 (fr) | 1993-08-04 | 1994-08-04 | Matériau semi-conducteur thermoélectrique. |
Country Status (3)
Country | Link |
---|---|
US (1) | US5547598A (fr) |
JP (1) | JP3348924B2 (fr) |
FR (1) | FR2708789B1 (fr) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2939726B2 (ja) * | 1996-04-19 | 1999-08-25 | 株式会社エスアイアイ・アールディセンター | 半導体加速度センサの製造方法 |
JP2004040068A (ja) * | 2001-08-31 | 2004-02-05 | Basf Ag | 熱電活性材料ならびにこれを含む熱変換器およびペルチェ装置 |
JP2003179243A (ja) * | 2001-08-31 | 2003-06-27 | Basf Ag | 光電池活性材料およびこれを含む電池 |
JP4009102B2 (ja) * | 2001-12-19 | 2007-11-14 | 独立行政法人科学技術振興機構 | 半導体特性を示すアモルファス鉄シリサイド膜とその作製方法 |
EP1521314A1 (fr) * | 2002-06-19 | 2005-04-06 | JFE Steel Corporation | Matiere transductrice thermoelectrique a base de disilicate de fer et transducteur thermoelectrique |
DE10305411B4 (de) * | 2003-02-06 | 2011-09-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mikroelektromechanische Vorrichtung und Verfahren zu deren Herstellung |
WO2004095594A1 (fr) * | 2003-04-22 | 2004-11-04 | Matsushita Electric Industrial Co., Ltd. | Materiau thermoelectriquement transducteur, transducteur thermoelectrique utilisant ce materiau, et procede de generation et de refroidissement utilisant ce transducteur |
US8614396B2 (en) * | 2007-09-28 | 2013-12-24 | Stion Corporation | Method and material for purifying iron disilicide for photovoltaic application |
US8058092B2 (en) * | 2007-09-28 | 2011-11-15 | Stion Corporation | Method and material for processing iron disilicide for photovoltaic application |
CN101436640B (zh) * | 2008-12-26 | 2011-08-10 | 哈尔滨工业大学 | ZnO/β-FeSi2复合材料及制备方法 |
WO2013027661A1 (fr) * | 2011-08-22 | 2013-02-28 | 株式会社村田製作所 | Module de conversion thermoélectrique et son procédé de fabrication |
JP2014225655A (ja) * | 2013-04-25 | 2014-12-04 | 中部電力株式会社 | 熱電変換材料 |
JP6502193B2 (ja) * | 2015-06-26 | 2019-04-17 | 国立研究開発法人産業技術総合研究所 | シリコン微結晶複合体膜、熱電材料及びそれらの製造方法 |
JP6768556B2 (ja) * | 2017-02-27 | 2020-10-14 | 株式会社日立製作所 | 熱電変換材料及びその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3854940A (en) * | 1970-06-08 | 1974-12-17 | Ppg Industries Inc | Electroconductive, corrosion resistant high silicon alloy |
JPS57169283A (en) * | 1981-04-11 | 1982-10-18 | Tdk Corp | Thermoelectric element |
JPS58190815A (ja) * | 1982-04-30 | 1983-11-07 | Futaba Corp | 遷移元素けい化物非晶質膜 |
JPS5956781A (ja) * | 1982-09-25 | 1984-04-02 | Natl Res Inst For Metals | 熱発電材料 |
JPS5999784A (ja) * | 1982-11-29 | 1984-06-08 | Sanyo Electric Co Ltd | 熱電素子 |
US4755256A (en) * | 1984-05-17 | 1988-07-05 | Gte Laboratories Incorporated | Method of producing small conductive members on a substrate |
JP2582776B2 (ja) * | 1987-05-12 | 1997-02-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
JPH01194373A (ja) * | 1988-01-29 | 1989-08-04 | Ube Ind Ltd | 熱電変換材料 |
JPH0435071A (ja) * | 1990-05-31 | 1992-02-05 | Ube Ind Ltd | 熱電薄膜及びその製造法 |
DE4129871C2 (de) * | 1991-09-07 | 1995-10-19 | Webasto Ag Fahrzeugtechnik | Verfahren zur Herstellung von GeSi-Thermoelementen |
-
1993
- 1993-08-04 JP JP19362593A patent/JP3348924B2/ja not_active Expired - Fee Related
-
1994
- 1994-08-02 US US08/284,785 patent/US5547598A/en not_active Expired - Lifetime
- 1994-08-04 FR FR9409682A patent/FR2708789B1/fr not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3348924B2 (ja) | 2002-11-20 |
US5547598A (en) | 1996-08-20 |
JPH0748116A (ja) | 1995-02-21 |
FR2708789A1 (fr) | 1995-02-10 |
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