FR2708789A1 - Matériau semi-conducteur thermoélectrique. - Google Patents

Matériau semi-conducteur thermoélectrique.

Info

Publication number
FR2708789A1
FR2708789A1 FR9409682A FR9409682A FR2708789A1 FR 2708789 A1 FR2708789 A1 FR 2708789A1 FR 9409682 A FR9409682 A FR 9409682A FR 9409682 A FR9409682 A FR 9409682A FR 2708789 A1 FR2708789 A1 FR 2708789A1
Authority
FR
France
Prior art keywords
semiconductor material
thermoelectrical
crystal
addition
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR9409682A
Other languages
English (en)
Other versions
FR2708789B1 (fr
Inventor
Amano Takashi
Okabayashi Makoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Technova Inc
Original Assignee
Technova Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technova Inc filed Critical Technova Inc
Publication of FR2708789A1 publication Critical patent/FR2708789A1/fr
Application granted granted Critical
Publication of FR2708789B1 publication Critical patent/FR2708789B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/855—Thermoelectric active materials comprising inorganic compositions comprising compounds containing boron, carbon, oxygen or nitrogen
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

Un matériau semi-conducteur thermoélectrique comprend du cristal de Si et du cristal de siliciure d'un métal choisi dans le groupe constitué par Fe, Co, Cr, Mn et Ni. Il est préférable que le siliciure de métal soit du beta-FeSi2 . De plus, le matériau semi-conducteur thermoélectrique contient en outre au moins un élément choisi dans les groupes Vb, VIb, IIIb, VIII, VIIa, VIa du tableau périodique des éléments en tant qu'additif. Cet élément peut être utilisé comme dopant. De plus, puisque à la fois la phase de cristal de Si et la phase de cristal de siliciure de métal sont changées pour être de type n ou de type p, les caractéristiques thermoélectriques sont améliorées.
FR9409682A 1993-08-04 1994-08-04 Matériau semi-conducteur thermoélectrique. Expired - Lifetime FR2708789B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19362593A JP3348924B2 (ja) 1993-08-04 1993-08-04 熱電半導体材料

Publications (2)

Publication Number Publication Date
FR2708789A1 true FR2708789A1 (fr) 1995-02-10
FR2708789B1 FR2708789B1 (fr) 1995-09-22

Family

ID=16311056

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9409682A Expired - Lifetime FR2708789B1 (fr) 1993-08-04 1994-08-04 Matériau semi-conducteur thermoélectrique.

Country Status (3)

Country Link
US (1) US5547598A (fr)
JP (1) JP3348924B2 (fr)
FR (1) FR2708789B1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2939726B2 (ja) * 1996-04-19 1999-08-25 株式会社エスアイアイ・アールディセンター 半導体加速度センサの製造方法
JP2003179243A (ja) * 2001-08-31 2003-06-27 Basf Ag 光電池活性材料およびこれを含む電池
JP2004040068A (ja) * 2001-08-31 2004-02-05 Basf Ag 熱電活性材料ならびにこれを含む熱変換器およびペルチェ装置
JP4009102B2 (ja) * 2001-12-19 2007-11-14 独立行政法人科学技術振興機構 半導体特性を示すアモルファス鉄シリサイド膜とその作製方法
WO2004001864A1 (fr) * 2002-06-19 2003-12-31 Jfe Steel Corporation Matiere transductrice thermoelectrique a base de disilicate de fer-$g(b) et transducteur thermoelectrique
DE10305411B4 (de) * 2003-02-06 2011-09-15 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikroelektromechanische Vorrichtung und Verfahren zu deren Herstellung
JP3725152B2 (ja) * 2003-04-22 2005-12-07 松下電器産業株式会社 熱電変換材料、この材料を用いた熱電変換素子、ならびにこの素子を用いた発電方法および冷却方法
US8058092B2 (en) * 2007-09-28 2011-11-15 Stion Corporation Method and material for processing iron disilicide for photovoltaic application
US8614396B2 (en) * 2007-09-28 2013-12-24 Stion Corporation Method and material for purifying iron disilicide for photovoltaic application
CN101436640B (zh) * 2008-12-26 2011-08-10 哈尔滨工业大学 ZnO/β-FeSi2复合材料及制备方法
WO2013027661A1 (fr) * 2011-08-22 2013-02-28 株式会社村田製作所 Module de conversion thermoélectrique et son procédé de fabrication
JP2014225655A (ja) * 2013-04-25 2014-12-04 中部電力株式会社 熱電変換材料
JP6502193B2 (ja) * 2015-06-26 2019-04-17 国立研究開発法人産業技術総合研究所 シリコン微結晶複合体膜、熱電材料及びそれらの製造方法
JP6768556B2 (ja) * 2017-02-27 2020-10-14 株式会社日立製作所 熱電変換材料及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5956781A (ja) * 1982-09-25 1984-04-02 Natl Res Inst For Metals 熱発電材料
JPS5999784A (ja) * 1982-11-29 1984-06-08 Sanyo Electric Co Ltd 熱電素子
US4539054A (en) * 1982-04-30 1985-09-03 Futaba Denshi Kogyo K.K. Amorphous film of transition element-silicon compound
JPH01194373A (ja) * 1988-01-29 1989-08-04 Ube Ind Ltd 熱電変換材料
DE4129871A1 (de) * 1991-09-07 1993-03-11 Webasto Ag Fahrzeugtechnik Verfahren zur herstellung von gesi-thermoelementen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3854940A (en) * 1970-06-08 1974-12-17 Ppg Industries Inc Electroconductive, corrosion resistant high silicon alloy
JPS57169283A (en) * 1981-04-11 1982-10-18 Tdk Corp Thermoelectric element
US4755256A (en) * 1984-05-17 1988-07-05 Gte Laboratories Incorporated Method of producing small conductive members on a substrate
JP2582776B2 (ja) * 1987-05-12 1997-02-19 株式会社東芝 半導体装置及びその製造方法
JPH0435071A (ja) * 1990-05-31 1992-02-05 Ube Ind Ltd 熱電薄膜及びその製造法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4539054A (en) * 1982-04-30 1985-09-03 Futaba Denshi Kogyo K.K. Amorphous film of transition element-silicon compound
JPS5956781A (ja) * 1982-09-25 1984-04-02 Natl Res Inst For Metals 熱発電材料
JPS5999784A (ja) * 1982-11-29 1984-06-08 Sanyo Electric Co Ltd 熱電素子
JPH01194373A (ja) * 1988-01-29 1989-08-04 Ube Ind Ltd 熱電変換材料
DE4129871A1 (de) * 1991-09-07 1993-03-11 Webasto Ag Fahrzeugtechnik Verfahren zur herstellung von gesi-thermoelementen

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DATABASE WPI Week 8937, Derwent World Patents Index; AN 89267226 *
NAVA ET AL.: "temperature dependence of semiconducting and structural properties of cr-si thin films", JOURNAL OF APPLIED PHYSICS, vol. 57, no. 6, March 1985 (1985-03-01), NEW YORK, pages 2018 - 2025 *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 155 (E - 256)<1592> 19 July 1984 (1984-07-19) *
PATENT ABSTRACTS OF JAPAN vol. 8, no. 213 (E - 269)<1650> 28 September 1984 (1984-09-28) *

Also Published As

Publication number Publication date
FR2708789B1 (fr) 1995-09-22
JP3348924B2 (ja) 2002-11-20
US5547598A (en) 1996-08-20
JPH0748116A (ja) 1995-02-21

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