FR2694988B1 - Dispositif optique d'émission et de réception et procédé de fabrication. - Google Patents

Dispositif optique d'émission et de réception et procédé de fabrication.

Info

Publication number
FR2694988B1
FR2694988B1 FR9310072A FR9310072A FR2694988B1 FR 2694988 B1 FR2694988 B1 FR 2694988B1 FR 9310072 A FR9310072 A FR 9310072A FR 9310072 A FR9310072 A FR 9310072A FR 2694988 B1 FR2694988 B1 FR 2694988B1
Authority
FR
France
Prior art keywords
manufacturing
optical transmission
reception device
reception
optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9310072A
Other languages
English (en)
Other versions
FR2694988A1 (fr
Inventor
Manabu Matsuda
Hajime Shoji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of FR2694988A1 publication Critical patent/FR2694988A1/fr
Application granted granted Critical
Publication of FR2694988B1 publication Critical patent/FR2694988B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2027—Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4246—Bidirectionally operating package structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4056—Edge-emitting structures emitting light in more than one direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0028—Laser diodes used as detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H01S5/1035—Forward coupled structures [DFC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32391—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers based on In(Ga)(As)P
FR9310072A 1992-08-18 1993-08-18 Dispositif optique d'émission et de réception et procédé de fabrication. Expired - Fee Related FR2694988B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21934692A JPH0669491A (ja) 1992-08-18 1992-08-18 光送受信装置

Publications (2)

Publication Number Publication Date
FR2694988A1 FR2694988A1 (fr) 1994-02-25
FR2694988B1 true FR2694988B1 (fr) 1995-02-17

Family

ID=16734015

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9310072A Expired - Fee Related FR2694988B1 (fr) 1992-08-18 1993-08-18 Dispositif optique d'émission et de réception et procédé de fabrication.

Country Status (3)

Country Link
US (1) US5533041A (fr)
JP (1) JPH0669491A (fr)
FR (1) FR2694988B1 (fr)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI945124A0 (fi) * 1994-10-31 1994-10-31 Valtion Teknillinen Spektrometer
DE4444470A1 (de) * 1994-11-29 1996-05-30 Hertz Inst Heinrich Sender/Empfänger-Anordnung für ein optisches Duplexsystem
KR100259490B1 (ko) * 1995-04-28 2000-06-15 윤종용 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치
DE29615486U1 (de) * 1996-09-05 1996-10-17 Kinshofer Georg Prof Dr Anordnung zur Messung der passiven optischen Netze
FR2753577B1 (fr) * 1996-09-13 1999-01-08 Alsthom Cge Alcatel Procede de fabrication d'un composant optoelectronique a semiconducteur et composant et matrice de composants fabriques selon ce procede
US5914976A (en) * 1997-01-08 1999-06-22 W. L. Gore & Associates, Inc. VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
JP2950302B2 (ja) * 1997-11-25 1999-09-20 日本電気株式会社 半導体レーザ
JP3977920B2 (ja) * 1998-05-13 2007-09-19 富士通株式会社 半導体装置の製造方法
US6731585B2 (en) * 2000-03-03 2004-05-04 Matsushita Electric Industrial Co., Ltd. Optical pick-up head with semiconductor laser
JP2002350793A (ja) * 2001-05-23 2002-12-04 Mitsubishi Electric Corp 光電変換半導体装置
US7127669B2 (en) * 2002-05-31 2006-10-24 Kiribati Wireless Ventures, Llc Redundant path communication methods and systems
US7504665B2 (en) * 2002-10-22 2009-03-17 University College Cardiff Consultants, Ltd. Semiconductor optical devices
JP2004235190A (ja) 2003-01-28 2004-08-19 Sony Corp 光半導体装置
JP4058633B2 (ja) * 2003-07-10 2008-03-12 セイコーエプソン株式会社 面発光型発光素子、光モジュール、光伝達装置
FR2858125B1 (fr) 2003-07-23 2005-08-26 Commissariat Energie Atomique Diode a cavite resonante, fonctionnant a la meme longueur d'onde pour l'emission et la detection de lumiere
JP3738849B2 (ja) * 2003-08-07 2006-01-25 セイコーエプソン株式会社 面発光型半導体レーザ、光モジュール、ならびに光伝達装置
KR100584333B1 (ko) * 2004-01-08 2006-05-26 삼성전자주식회사 반도체 레이저 장치 및 그 제조방법
US7228683B2 (en) * 2004-07-21 2007-06-12 General Electric Company Methods and apparatus for generating gas turbine engine thrust using a pulse detonator
KR100663589B1 (ko) * 2004-11-24 2007-01-02 삼성전자주식회사 분포귀환 반도체 레이저의 제조방법
KR100634538B1 (ko) * 2005-02-05 2006-10-13 삼성전자주식회사 효율적인 냉각 구조를 갖는 반도체 발광 소자 및 그 제조방법
JP5382289B2 (ja) * 2008-03-26 2014-01-08 セイコーエプソン株式会社 発光装置
JP5769483B2 (ja) * 2011-04-21 2015-08-26 キヤノン株式会社 面発光レーザ及び画像形成装置
JP6825251B2 (ja) * 2016-07-12 2021-02-03 富士ゼロックス株式会社 発光素子
GB2561590A (en) * 2017-04-19 2018-10-24 Quantum Base Ltd A photonic device
CN110416250B (zh) * 2019-09-02 2024-04-16 电子科技大学 基于异质结薄膜光源的光耦、其放大集成电路及制作方法
JP2021097184A (ja) * 2019-12-19 2021-06-24 株式会社沖データ 発光サイリスタ、光プリントヘッド、及び画像形成装置
US11757253B2 (en) * 2020-05-21 2023-09-12 Lumentum Operations Llc Vertical cavity surface emitting laser with active layer-specific addressability
CN112327270A (zh) * 2020-11-04 2021-02-05 国科光芯(海宁)科技股份有限公司 一种片上集成混沌雷达芯片及其制备方法
CN116364827B (zh) * 2023-05-29 2023-08-29 江西兆驰半导体有限公司 一种mini LED及其制备方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4349906A (en) * 1979-09-18 1982-09-14 Xerox Corporation Optically controlled integrated current diode lasers
DE3046140A1 (de) * 1980-12-06 1982-07-15 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt "signaluebertragungsverfahren, ein halbleiter-bauelement sowie ein elektro-optisches bauelement zur durchfuehrung des verfahrens"
ATE76981T1 (de) * 1985-01-07 1992-06-15 Siemens Ag Verfahren zur herstellung einer integriert optischen anordnung.
DE3687162D1 (de) * 1985-12-10 1993-01-07 Siemens Ag Integriert-optischer multiplex-demultiplex-modul fuer die optische nachrichtenuebertragung.
JPS63111679A (ja) * 1986-10-29 1988-05-16 Mitsubishi Electric Corp 光半導体素子
JPS63208294A (ja) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp 半導体レ−ザ
US5220573A (en) * 1989-03-10 1993-06-15 Canon Kabushiki Kaisha Optical apparatus using wavelength selective photocoupler
FR2667207B1 (fr) * 1990-09-21 1993-06-25 Thomson Csf Convertisseur de frequences lumineuses.
JP2980435B2 (ja) * 1991-09-12 1999-11-22 株式会社東芝 半導体装置
US5404373A (en) * 1991-11-08 1995-04-04 University Of New Mexico Electro-optical device

Also Published As

Publication number Publication date
FR2694988A1 (fr) 1994-02-25
JPH0669491A (ja) 1994-03-11
US5533041A (en) 1996-07-02

Similar Documents

Publication Publication Date Title
FR2694988B1 (fr) Dispositif optique d'émission et de réception et procédé de fabrication.
EP0585565A3 (fr) Guide d'onde optique et sa méthode de fabrication.
EP0558089A3 (en) Semiconductor optical integrated device and method of manufacture thereof, and light receiver using said device
GB2243721B (en) Semiconductor optical transceiver and lightwave communications system
DE69125314D1 (de) Optisches Übertragungssystem und -verfahren
EP0477036A3 (en) Optical information transmitting device and method of manufacturing same
FR2569872B1 (fr) Dispositif optique a transmission variable et procede de fabrication d'un tel dispositif
GB2243720B (en) Semiconductor optical transceiver and lightwave communications system
FR2722303B1 (fr) Procede et dispositif de fabrication de reseaux de microlentilles optiques
DE59308072D1 (de) Bidirektionaler optischer Sende- und Empfangsmodul
DE59408679D1 (de) Bidirektionale optische Sende- und Empfangsanordnung
EP0616234A3 (fr) Guide d'onde en polyimide et procédé de fabrication.
FR2502797B1 (fr) Dispositif de transmission d'un faisceau laser et procede de fabrication d'un troncon de fibre optique a section variable du dispositif
FR2752623B1 (fr) Procede de fabrication d'un dispositif de couplage optique collectif et dispositif obtenu par un tel procede
DE69303654D1 (de) Optische Wellenleitervorrichtung und Herstellungsverfahren
DE69432502D1 (de) Leitungsungebundenes optisches Übertragungssystem
DE69127215D1 (de) Optisches Übertragungsverfahren und optisches Übertragungssystem
FR2706218B1 (fr) Câble à conducteurs fins, notamment des fibres optiques, et procédé et dispositif de réalisation d'un câble à conducteurs fins.
DE69408743T2 (de) Optische Kopplungsvorrichtung und zugehörige Herstellungsmethode
FR2719943B1 (fr) Procédé de fabrication d'un dispositif d'affichage.
FR2676548B1 (fr) Coupleur optique et son procede de fabrication.
FR2708590B1 (fr) Procédé de fabrication de fils coupés et dispositif associé.
FR2673298B1 (fr) Methode et dispositif de transmission sismique a taux d'erreur tres faible.
FR2693280B1 (fr) Dispositif mobile de déplacement et de positionnement d'un ou de plusieurs appareils optiques.
FR2674364B1 (fr) Cable a faible coefficient de frottement et procede et dispositif de fabrication de ce cable.

Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20110502