FR2687003B1 - Circuit de sortie de donnees pour un dispositif de memoire a semi-conducteur. - Google Patents

Circuit de sortie de donnees pour un dispositif de memoire a semi-conducteur.

Info

Publication number
FR2687003B1
FR2687003B1 FR9214380A FR9214380A FR2687003B1 FR 2687003 B1 FR2687003 B1 FR 2687003B1 FR 9214380 A FR9214380 A FR 9214380A FR 9214380 A FR9214380 A FR 9214380A FR 2687003 B1 FR2687003 B1 FR 2687003B1
Authority
FR
France
Prior art keywords
memory device
semiconductor memory
output circuit
data output
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9214380A
Other languages
English (en)
Other versions
FR2687003A1 (fr
Inventor
Young-Rae Kim
Yun-Sang Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2687003A1 publication Critical patent/FR2687003A1/fr
Application granted granted Critical
Publication of FR2687003B1 publication Critical patent/FR2687003B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/106—Data output latches
FR9214380A 1992-01-30 1992-11-30 Circuit de sortie de donnees pour un dispositif de memoire a semi-conducteur. Expired - Fee Related FR2687003B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920001394A KR950000496B1 (ko) 1992-01-30 1992-01-30 반도체 메모리 장치의 데이타 출력회로

Publications (2)

Publication Number Publication Date
FR2687003A1 FR2687003A1 (fr) 1993-08-06
FR2687003B1 true FR2687003B1 (fr) 1994-09-23

Family

ID=19328487

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9214380A Expired - Fee Related FR2687003B1 (fr) 1992-01-30 1992-11-30 Circuit de sortie de donnees pour un dispositif de memoire a semi-conducteur.

Country Status (8)

Country Link
US (1) US5396463A (fr)
JP (1) JP2862744B2 (fr)
KR (1) KR950000496B1 (fr)
DE (1) DE4239123A1 (fr)
FR (1) FR2687003B1 (fr)
GB (1) GB2263801B (fr)
IT (1) IT1263771B (fr)
TW (1) TW217477B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5546338A (en) * 1994-08-26 1996-08-13 Townsend And Townsend Khourie And Crew Fast voltage equilibration of differential data lines
GB9417265D0 (en) * 1994-08-26 1994-10-19 Inmos Ltd Controlling capacitive load
JP3672968B2 (ja) * 1995-05-29 2005-07-20 株式会社ルネサステクノロジ ブースト回路
KR0172380B1 (ko) * 1995-06-17 1999-03-30 김광호 반도체 메모리장치의 데이터 출력버퍼
JPH10241360A (ja) * 1997-02-24 1998-09-11 Kawasaki Steel Corp 半導体記憶装置
JP2002501654A (ja) * 1997-05-30 2002-01-15 ミクロン テクノロジー，インコーポレイテッド ２５６Ｍｅｇダイナミックランダムアクセスメモリ
US5940333A (en) * 1998-07-08 1999-08-17 Advanced Micro Devices, Inc. Recursive voltage boosting technique
JP2000040369A (ja) * 1998-07-23 2000-02-08 Mitsubishi Electric Corp 半導体集積回路装置
US6141263A (en) * 1999-03-01 2000-10-31 Micron Technology, Inc. Circuit and method for a high data transfer rate output driver
US6256235B1 (en) * 2000-06-23 2001-07-03 Micron Technology, Inc. Adjustable driver pre-equalization for memory subsystems
KR100764428B1 (ko) * 2000-08-30 2007-10-05 주식회사 하이닉스반도체 반도체 메모리 소자의 전압발생장치
KR20030053594A (ko) * 2001-12-22 2003-07-02 삼성전자주식회사 커플링 효과를 감쇄시킬 수 있는 데이터 출력방법 및출력회로
KR100486263B1 (ko) * 2002-09-19 2005-05-03 삼성전자주식회사 Ｓｄｒ/ｄｄｒ 겸용 반도체 메모리 장치의 데이터 출력 회로
KR100499405B1 (ko) * 2002-11-25 2005-07-05 주식회사 하이닉스반도체 데이터 출력버퍼 제어회로
KR100670682B1 (ko) * 2005-02-04 2007-01-17 주식회사 하이닉스반도체 반도체 기억 소자에서의 데이터 출력 회로 및 방법
KR100736039B1 (ko) 2005-08-04 2007-07-06 삼성전자주식회사 사용자의 시청 등급을 기초로 프로그램 등급 및 시청량을표시하는 디스플레이 장치 및 그 방법
US7818135B2 (en) * 2008-05-30 2010-10-19 Agere Systems Inc. Optimum timing of write and read clock paths

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6196587A (ja) * 1984-10-17 1986-05-15 Toshiba Corp センスアンプ回路
JPS61110399A (ja) * 1984-11-05 1986-05-28 Toshiba Corp ダイナミツクメモリのデ−タ出力回路
JPH0612632B2 (ja) * 1987-02-27 1994-02-16 日本電気株式会社 メモリ回路
JPH01192081A (ja) * 1988-01-27 1989-08-02 Mitsubishi Electric Corp 半導体記憶装置
JPH01300493A (ja) * 1988-05-27 1989-12-04 Ricoh Co Ltd 記憶装置
KR910008101B1 (ko) * 1988-12-30 1991-10-07 삼성전자 주식회사 반도체 메모리 소자의 피드백형 데이타 출력 회로
JPH035992A (ja) * 1989-06-02 1991-01-11 Hitachi Ltd 半導体記憶装置
US4963766A (en) * 1989-06-28 1990-10-16 Digital Equipment Corporation Low-voltage CMOS output buffer
US4991140A (en) * 1990-01-04 1991-02-05 Motorola, Inc. Integrated circuit memory with improved di/dt control
KR930003929B1 (ko) * 1990-08-09 1993-05-15 삼성전자 주식회사 데이타 출력버퍼

Also Published As

Publication number Publication date
JPH0684373A (ja) 1994-03-25
KR950000496B1 (ko) 1995-01-24
US5396463A (en) 1995-03-07
DE4239123A1 (fr) 1993-08-05
IT1263771B (it) 1996-08-29
ITMI930073A1 (it) 1994-07-19
KR930017021A (ko) 1993-08-30
GB2263801A (en) 1993-08-04
TW217477B (fr) 1993-12-11
ITMI930073A0 (it) 1993-01-19
GB2263801B (en) 1995-08-30
FR2687003A1 (fr) 1993-08-06
GB9300855D0 (en) 1993-03-10
JP2862744B2 (ja) 1999-03-03

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Legal Events

Date Code Title Description
ST Notification of lapse

Effective date: 20100730