FR2676143B1 - Procede pour fabriquer une electrode metallique dans un dispositif semi-conducteur. - Google Patents

Procede pour fabriquer une electrode metallique dans un dispositif semi-conducteur.

Info

Publication number
FR2676143B1
FR2676143B1 FR9116244A FR9116244A FR2676143B1 FR 2676143 B1 FR2676143 B1 FR 2676143B1 FR 9116244 A FR9116244 A FR 9116244A FR 9116244 A FR9116244 A FR 9116244A FR 2676143 B1 FR2676143 B1 FR 2676143B1
Authority
FR
France
Prior art keywords
manufacturing
semiconductor device
metal electrode
electrode
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9116244A
Other languages
English (en)
French (fr)
Other versions
FR2676143A1 (fr
Inventor
Byungseong Bae
Jeongha Sohn
Insik Jang
Sangsoo Kim
Namdeog Kim
Hyungtaek Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1019910007009A external-priority patent/KR940008565B1/ko
Priority claimed from KR1019910007010A external-priority patent/KR940005446B1/ko
Priority claimed from KR1019910011375A external-priority patent/KR930003254A/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2676143A1 publication Critical patent/FR2676143A1/fr
Application granted granted Critical
Publication of FR2676143B1 publication Critical patent/FR2676143B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H10W20/069—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H10D64/013—
    • H10P14/6314—
    • H10W20/092—
    • H10P14/6324—
FR9116244A 1991-04-30 1991-12-27 Procede pour fabriquer une electrode metallique dans un dispositif semi-conducteur. Expired - Fee Related FR2676143B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1019910007009A KR940008565B1 (ko) 1991-04-30 1991-04-30 반도체 장치의 금속전극 형성방법
KR1019910007010A KR940005446B1 (ko) 1991-04-30 1991-04-30 반도체 장치의 금속전극 형성방법
KR1019910011375A KR930003254A (ko) 1991-07-05 1991-07-05 반도체 장치의 금속배선 방법

Publications (2)

Publication Number Publication Date
FR2676143A1 FR2676143A1 (fr) 1992-11-06
FR2676143B1 true FR2676143B1 (fr) 1994-05-20

Family

ID=27348735

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9116244A Expired - Fee Related FR2676143B1 (fr) 1991-04-30 1991-12-27 Procede pour fabriquer une electrode metallique dans un dispositif semi-conducteur.

Country Status (6)

Country Link
US (2) US5240868A (cg-RX-API-DMAC10.html)
JP (1) JPH0793420B2 (cg-RX-API-DMAC10.html)
DE (1) DE4143116C2 (cg-RX-API-DMAC10.html)
FR (1) FR2676143B1 (cg-RX-API-DMAC10.html)
GB (1) GB2255443B (cg-RX-API-DMAC10.html)
TW (1) TW237555B (cg-RX-API-DMAC10.html)

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KR960001611B1 (ko) 1991-03-06 1996-02-02 가부시끼가이샤 한도다이 에네르기 겐뀨쇼 절연 게이트형 전계 효과 반도체 장치 및 그 제작방법
US5468987A (en) * 1991-03-06 1995-11-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
JP2873632B2 (ja) * 1991-03-15 1999-03-24 株式会社半導体エネルギー研究所 半導体装置
US6713783B1 (en) 1991-03-15 2004-03-30 Semiconductor Energy Laboratory Co., Ltd. Compensating electro-optical device including thin film transistors
US5485019A (en) 1992-02-05 1996-01-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US6624450B1 (en) * 1992-03-27 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
TW223178B (en) * 1992-03-27 1994-05-01 Semiconductor Energy Res Co Ltd Semiconductor device and its production method
TW232751B (en) * 1992-10-09 1994-10-21 Semiconductor Energy Res Co Ltd Semiconductor device and method for forming the same
US6624477B1 (en) 1992-10-09 2003-09-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR970004885B1 (ko) * 1993-05-12 1997-04-08 삼성전자 주식회사 평판표시장치 및 그 제조방법
JPH0730125A (ja) * 1993-07-07 1995-01-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2951215B2 (ja) * 1993-09-10 1999-09-20 レイセオン・カンパニー 位相マスクレーザによる微細なパターンの電子相互接続構造の製造方法
US5731216A (en) * 1996-03-27 1998-03-24 Image Quest Technologies, Inc. Method of making an active matrix display incorporating an improved TFT
US5888371A (en) * 1996-04-10 1999-03-30 The Board Of Trustees Of The Leland Stanford Jr. University Method of fabricating an aperture for a near field scanning optical microscope
JPH10163501A (ja) * 1996-11-29 1998-06-19 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型トランジスタ
KR100229678B1 (ko) * 1996-12-06 1999-11-15 구자홍 박막트랜지스터 및 그의 제조방법
US20020008257A1 (en) * 1998-09-30 2002-01-24 John P. Barnak Mosfet gate electrodes having performance tuned work functions and methods of making same
DE10014985A1 (de) * 2000-03-25 2001-10-04 Bosch Gmbh Robert Herstellungsverfahren für ein Dünnschicht-Bauelement, insbesondere ein Dünnschicht-Hochdrucksensorelement
JP4581198B2 (ja) * 2000-08-10 2010-11-17 ソニー株式会社 窒化物化合物半導体層の熱処理方法及び半導体素子の製造方法
US7347924B1 (en) * 2002-12-24 2008-03-25 Ij Research, Inc. Anodizing of optically transmissive substrate
US20060183342A1 (en) * 2005-02-15 2006-08-17 Eastman Kodak Company Metal and metal oxide patterned device
US7963832B2 (en) * 2006-02-22 2011-06-21 Cummins Inc. Engine intake air temperature management system
US20080121877A1 (en) * 2006-11-27 2008-05-29 3M Innovative Properties Company Thin film transistor with enhanced stability
US7655127B2 (en) * 2006-11-27 2010-02-02 3M Innovative Properties Company Method of fabricating thin film transistor
KR101076191B1 (ko) * 2008-12-05 2011-10-21 현대자동차주식회사 피티씨 로드 조립체 및 이를 이용한 피티씨 히터
WO2010074913A2 (en) * 2008-12-23 2010-07-01 3M Innovative Properties Company Electrical connections for anodized thin film structures
JP2011025548A (ja) * 2009-07-27 2011-02-10 Kyocera Corp 配線基板およびその製造方法、ならびに記録ヘッドおよび記録装置

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Publication number Priority date Publication date Assignee Title
US3862017A (en) * 1970-02-04 1975-01-21 Hideo Tsunemitsu Method for producing a thin film passive circuit element
US3671819A (en) * 1971-01-26 1972-06-20 Westinghouse Electric Corp Metal-insulator structures and method for forming
US3909319A (en) * 1971-02-23 1975-09-30 Shohei Fujiwara Planar structure semiconductor device and method of making the same
JPS557020B2 (cg-RX-API-DMAC10.html) * 1971-11-15 1980-02-21
US3939047A (en) * 1971-11-15 1976-02-17 Nippon Electric Co., Ltd. Method for fabricating electrode structure for a semiconductor device having a shallow junction
US3864217A (en) * 1974-01-21 1975-02-04 Nippon Electric Co Method of fabricating a semiconductor device
US4005452A (en) * 1974-11-15 1977-01-25 International Telephone And Telegraph Corporation Method for providing electrical isolating material in selected regions of a semiconductive material and the product produced thereby
US3971710A (en) * 1974-11-29 1976-07-27 Ibm Anodized articles and process of preparing same
DE2539193C3 (de) * 1975-09-03 1979-04-19 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Herstellung eines planeren Leiterbahnsystems für integrierte Halbleiterschaltungen
JPS5271980A (en) * 1975-12-11 1977-06-15 Nec Corp Formation of metal wiring
JPS53107284A (en) * 1977-03-02 1978-09-19 Hitachi Ltd Production of semiconductor device
US4158613A (en) * 1978-12-04 1979-06-19 Burroughs Corporation Method of forming a metal interconnect structure for integrated circuits
US4261096A (en) * 1979-03-30 1981-04-14 Harris Corporation Process for forming metallic ground grid for integrated circuits
JPS58100461A (ja) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタの製造方法
US4432134A (en) * 1982-05-10 1984-02-21 Rockwell International Corporation Process for in-situ formation of niobium-insulator-niobium Josephson tunnel junction devices
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
US4681666A (en) * 1986-11-13 1987-07-21 Microelectronics And Computer Technology Corporation Planarization of a layer of metal and anodic aluminum
JPH061314B2 (ja) * 1987-07-30 1994-01-05 シャープ株式会社 薄膜トランジスタアレイ
JPH01219721A (ja) * 1988-02-19 1989-09-01 Internatl Business Mach Corp <Ibm> 金属絶縁物構造体及び液晶表示装置

Also Published As

Publication number Publication date
DE4143116C2 (de) 1996-07-18
GB2255443A (en) 1992-11-04
JPH0793420B2 (ja) 1995-10-09
FR2676143A1 (fr) 1992-11-06
GB2255443B (en) 1995-09-13
JPH04338677A (ja) 1992-11-25
US5306668A (en) 1994-04-26
TW237555B (cg-RX-API-DMAC10.html) 1995-01-01
US5240868A (en) 1993-08-31
GB9127095D0 (en) 1992-02-19
DE4143116A1 (de) 1992-11-05

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