FR2601503B1 - Appareil de conversion photo-electrique - Google Patents

Appareil de conversion photo-electrique

Info

Publication number
FR2601503B1
FR2601503B1 FR8709833A FR8709833A FR2601503B1 FR 2601503 B1 FR2601503 B1 FR 2601503B1 FR 8709833 A FR8709833 A FR 8709833A FR 8709833 A FR8709833 A FR 8709833A FR 2601503 B1 FR2601503 B1 FR 2601503B1
Authority
FR
France
Prior art keywords
photo
conversion apparatus
electric conversion
electric
conversion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR8709833A
Other languages
English (en)
Other versions
FR2601503A1 (fr
Inventor
Shinohara Mahito
Yone Takao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2601503A1 publication Critical patent/FR2601503A1/fr
Application granted granted Critical
Publication of FR2601503B1 publication Critical patent/FR2601503B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
    • H01L31/03762—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers, e.g. bipolar phototransistors the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
    • H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
    • H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/026—Deposition thru hole in mask
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/152—Single crystal on amorphous substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR8709833A 1986-07-11 1987-07-10 Appareil de conversion photo-electrique Expired - Fee Related FR2601503B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61162128A JPH0812906B2 (ja) 1986-07-11 1986-07-11 光電変換装置の製造方法

Publications (2)

Publication Number Publication Date
FR2601503A1 FR2601503A1 (fr) 1988-01-15
FR2601503B1 true FR2601503B1 (fr) 1996-08-30

Family

ID=15748572

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8709833A Expired - Fee Related FR2601503B1 (fr) 1986-07-11 1987-07-10 Appareil de conversion photo-electrique

Country Status (5)

Country Link
US (1) US5008206A (fr)
JP (1) JPH0812906B2 (fr)
DE (1) DE3722916A1 (fr)
FR (1) FR2601503B1 (fr)
GB (1) GB2192488B (fr)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0251767A3 (fr) * 1986-06-30 1988-09-07 Canon Kabushiki Kaisha Dispositif semi-conducteur ayant une région de grille isolée et son procédé de fabrication
JP2505754B2 (ja) * 1986-07-11 1996-06-12 キヤノン株式会社 光電変換装置の製造方法
US5201681A (en) * 1987-02-06 1993-04-13 Canon Kabushiki Kaisha Method of emitting electrons
US5176557A (en) * 1987-02-06 1993-01-05 Canon Kabushiki Kaisha Electron emission element and method of manufacturing the same
DE3835700A1 (de) * 1988-10-20 1990-04-26 Licentia Gmbh Anordnung und verfahren zur herstellung eines bildsensors
US5288988A (en) * 1990-08-07 1994-02-22 Canon Kabushiki Kaisha Photoconversion device having reset control circuitry
JP2744350B2 (ja) * 1990-11-22 1998-04-28 キヤノン株式会社 半導体基板およびその製造方法
US5406332A (en) * 1992-03-06 1995-04-11 Canon Kabushiki Kaisha Photoelectric converting device
DE19649851C2 (de) * 1995-12-05 2002-06-20 Intel Gmbh Vorrichtung zur Übersprechdämpfung integrierter Fototransistoren
US5952686A (en) * 1997-12-03 1999-09-14 Hewlett-Packard Company Salient integration mode active pixel sensor
JP3619053B2 (ja) 1999-05-21 2005-02-09 キヤノン株式会社 光電変換装置の製造方法
JP3647390B2 (ja) 2000-06-08 2005-05-11 キヤノン株式会社 電荷転送装置、固体撮像装置及び撮像システム
JP4310076B2 (ja) * 2001-05-31 2009-08-05 キヤノン株式会社 結晶性薄膜の製造方法
CN1225897C (zh) * 2002-08-21 2005-11-02 佳能株式会社 摄像装置
JP4497844B2 (ja) * 2003-05-30 2010-07-07 キヤノン株式会社 固体撮像装置の製造方法
JP2005328275A (ja) * 2004-05-13 2005-11-24 Canon Inc 固体撮像装置および撮像システム
JP5188221B2 (ja) 2008-03-14 2013-04-24 キヤノン株式会社 固体撮像装置
JP2010016056A (ja) 2008-07-01 2010-01-21 Canon Inc 光電変換装置
JP5661260B2 (ja) * 2009-07-16 2015-01-28 キヤノン株式会社 固体撮像装置及びその駆動方法
JP5489570B2 (ja) * 2009-07-27 2014-05-14 キヤノン株式会社 光電変換装置及び撮像システム
JP5767465B2 (ja) 2010-12-15 2015-08-19 キヤノン株式会社 固体撮像装置およびその製造方法ならびにカメラ
JP2015177034A (ja) 2014-03-14 2015-10-05 キヤノン株式会社 固体撮像装置、その製造方法、及びカメラ
JP6552479B2 (ja) 2016-12-28 2019-07-31 キヤノン株式会社 固体撮像装置及び撮像システム
JP6953263B2 (ja) 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム
JP7108421B2 (ja) 2018-02-15 2022-07-28 キヤノン株式会社 撮像装置及び撮像システム
JP7134781B2 (ja) 2018-08-17 2022-09-12 キヤノン株式会社 光電変換装置及び撮像システム
US11503234B2 (en) 2019-02-27 2022-11-15 Canon Kabushiki Kaisha Photoelectric conversion device, imaging system, radioactive ray imaging system, and movable object
JP2022025594A (ja) 2020-07-29 2022-02-10 キヤノン株式会社 光電変換装置
JP2022052529A (ja) 2020-09-23 2022-04-04 キヤノン株式会社 光電変換装置、撮像装置、半導体装置及び光電変換システム

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3620833A (en) * 1966-12-23 1971-11-16 Texas Instruments Inc Integrated circuit fabrication
US3549432A (en) * 1968-07-15 1970-12-22 Texas Instruments Inc Multilayer microelectronic circuitry techniques
US3900943A (en) * 1973-06-07 1975-08-26 Dow Corning Silicon semiconductor device array and method of making same
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
US4174422A (en) * 1977-12-30 1979-11-13 International Business Machines Corporation Growing epitaxial films when the misfit between film and substrate is large
GB2020626B (en) * 1978-05-15 1982-12-15 Hitachi Shipbuilding Eng Co Bag for enclosing a cask
JPS5850030B2 (ja) * 1979-03-08 1983-11-08 日本放送協会 光電変換装置およびそれを用いた固体撮像板
US4517733A (en) * 1981-01-06 1985-05-21 Fuji Xerox Co., Ltd. Process for fabricating thin film image pick-up element
US4471371A (en) * 1981-01-06 1984-09-11 Fuji Xerox Co., Ltd. Thin film image pickup element
US4637127A (en) * 1981-07-07 1987-01-20 Nippon Electric Co., Ltd. Method for manufacturing a semiconductor device
JPS5853822A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置
JPS5856406A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体膜の製造方法
JPS5928327A (ja) * 1982-08-09 1984-02-15 Nippon Telegr & Teleph Corp <Ntt> 単結晶半導体膜形成法
JPS5890724A (ja) * 1981-11-25 1983-05-30 Mitsubishi Electric Corp 積層半導体装置の製造方法
US4479847A (en) * 1981-12-30 1984-10-30 California Institute Of Technology Equilibrium crystal growth from substrate confined liquid
JPS58124222A (ja) * 1982-01-20 1983-07-23 Nippon Telegr & Teleph Corp <Ntt> 半導体装置用基体
US4670088A (en) * 1982-03-18 1987-06-02 Massachusetts Institute Of Technology Lateral epitaxial growth by seeded solidification
JPS6012765A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置
JPS6012764A (ja) * 1983-07-02 1985-01-23 Tadahiro Omi 光電変換装置
US4686554A (en) * 1983-07-02 1987-08-11 Canon Kabushiki Kaisha Photoelectric converter
JPS63239932A (ja) * 1987-03-27 1988-10-05 Canon Inc 結晶の形成方法

Also Published As

Publication number Publication date
DE3722916A1 (de) 1988-01-21
JPS6318667A (ja) 1988-01-26
DE3722916C2 (fr) 1991-05-29
US5008206A (en) 1991-04-16
GB2192488B (en) 1990-07-25
FR2601503A1 (fr) 1988-01-15
JPH0812906B2 (ja) 1996-02-07
GB2192488A (en) 1988-01-13
GB8716261D0 (en) 1987-08-19

Similar Documents

Publication Publication Date Title
FR2601503B1 (fr) Appareil de conversion photo-electrique
FR2600521B1 (fr) Appareil de lithotritie ultrasonore.
DE3751285D1 (de) Fotoelektrische Umwandlungsvorrichtung.
BR8703901A (pt) Dispositivo de lanceta
FI873491A0 (fi) Puristinlaite
MC1928A1 (fr) Echantillon de cosmetique
DE69028156T2 (de) Photoelektrisches Umwandlungsgerät
FR2601506B1 (fr) Dispositif de conversion photo-electrique
DE3381074D1 (de) Photo-elektrischer umsetzungsapparat.
FR2604697B1 (fr) Appareil de manutention de cable
DE3889603D1 (de) Photoelektrisches Umwandlungsgerät.
BR8707488A (pt) Detetor de detritos
DE3850157D1 (de) Photoelektrische Umwandlungsanordnung.
BR8703098A (pt) Conjunto de prendedor alongado
PT85595A (pt) Dispositivo de uniao
KR880008807U (ko) 브러시 장치
FR2608836B1 (fr) Tube de conversion photoelectrique
NO872847D0 (no) Anordning for tannrensning.
DK562687A (da) Opmudringsindretning
FR2598351B1 (fr) Appareil de photocomposition
FR2604539B1 (fr) Appareil de developpement
DE69027840T2 (de) Fotoelektrisches Verwandlungsgerät
FR2604538B1 (fr) Appareil de developpement
FR2564287B1 (fr) Appareil de deratisation
EP0233020A3 (en) Photoelectric conversion apparatus

Legal Events

Date Code Title Description
ST Notification of lapse