FR2545984B1 - Procede de fabrication a sec d'un dispositif semi-conducteur par reaction photochimique et appareil pour la mise en oeuvre de ce procede - Google Patents
Procede de fabrication a sec d'un dispositif semi-conducteur par reaction photochimique et appareil pour la mise en oeuvre de ce procedeInfo
- Publication number
- FR2545984B1 FR2545984B1 FR848407292A FR8407292A FR2545984B1 FR 2545984 B1 FR2545984 B1 FR 2545984B1 FR 848407292 A FR848407292 A FR 848407292A FR 8407292 A FR8407292 A FR 8407292A FR 2545984 B1 FR2545984 B1 FR 2545984B1
- Authority
- FR
- France
- Prior art keywords
- carrying
- semiconductor device
- photochemical reaction
- dry manufacture
- dry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000006552 photochemical reaction Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32321—Discharge generated by other radiation
- H01J37/32339—Discharge generated by other radiation using electromagnetic radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58082368A JPS59207631A (ja) | 1983-05-11 | 1983-05-11 | 光化学を用いたドライプロセス装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2545984A1 FR2545984A1 (fr) | 1984-11-16 |
FR2545984B1 true FR2545984B1 (fr) | 1989-11-03 |
Family
ID=13772639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR848407292A Expired FR2545984B1 (fr) | 1983-05-11 | 1984-05-11 | Procede de fabrication a sec d'un dispositif semi-conducteur par reaction photochimique et appareil pour la mise en oeuvre de ce procede |
Country Status (5)
Country | Link |
---|---|
US (1) | US4540466A (fr) |
JP (1) | JPS59207631A (fr) |
DE (1) | DE3416470A1 (fr) |
FR (1) | FR2545984B1 (fr) |
GB (1) | GB2141386B (fr) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3407089A1 (de) * | 1984-02-27 | 1985-08-29 | Siemens Ag | Verfahren und vorrichtung zur lichtinduzierten, fotolytischen abscheidung |
JPH0630339B2 (ja) * | 1984-07-16 | 1994-04-20 | 新技術事業団 | GaAs単結晶の製造方法 |
GB2162207B (en) * | 1984-07-26 | 1989-05-10 | Japan Res Dev Corp | Semiconductor crystal growth apparatus |
US5294286A (en) * | 1984-07-26 | 1994-03-15 | Research Development Corporation Of Japan | Process for forming a thin film of silicon |
JPH0766906B2 (ja) * | 1984-07-26 | 1995-07-19 | 新技術事業団 | GaAsエピタキシャル成長方法 |
JPS6175529A (ja) * | 1984-09-21 | 1986-04-17 | Toshiba Corp | ドライエツチング方法及び装置 |
KR900001825B1 (ko) * | 1984-11-14 | 1990-03-24 | 가부시끼가이샤 히다찌세이사꾸쇼 | 성막 지향성을 고려한 스퍼터링장치 |
JPS61174639A (ja) * | 1985-01-28 | 1986-08-06 | Semiconductor Energy Lab Co Ltd | 光エツチング方法 |
WO1986005320A1 (fr) * | 1985-02-28 | 1986-09-12 | Sony Corporation | Procede et systeme de fabrication d'une couche isolante a la surface du substrat d'un semi-conducteur |
US4668304A (en) * | 1985-04-10 | 1987-05-26 | Eaton Corporation | Dopant gettering semiconductor processing by excimer laser |
US4687544A (en) * | 1985-05-17 | 1987-08-18 | Emergent Technologies Corporation | Method and apparatus for dry processing of substrates |
JPH0682642B2 (ja) * | 1985-08-09 | 1994-10-19 | 株式会社日立製作所 | 表面処理装置 |
NL8602356A (nl) * | 1985-10-07 | 1987-05-04 | Epsilon Ltd Partnership | Inrichting en werkwijze voor een axiaal symmetrische reactor voor het chemische uit damp neerslaan. |
US4798165A (en) * | 1985-10-07 | 1989-01-17 | Epsilon | Apparatus for chemical vapor deposition using an axially symmetric gas flow |
NL8602357A (nl) * | 1985-10-07 | 1987-05-04 | Epsilon Ltd Partnership | Inrichting en werkwijze voor het chemisch uit damp neerslaan met gebruik van een axiaal symmetrische gasstroming. |
JP2515731B2 (ja) * | 1985-10-25 | 1996-07-10 | 株式会社日立製作所 | 薄膜形成装置および薄膜形成方法 |
DE3784537T2 (de) * | 1986-04-11 | 1993-09-30 | Canon Kk | Herstellungsverfahren einer niedergeschlagenen Schicht. |
US5244501A (en) * | 1986-07-26 | 1993-09-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
GB8620273D0 (en) * | 1986-08-20 | 1986-10-01 | Gen Electric Co Plc | Deposition of thin films |
DE3628443C1 (de) * | 1986-08-21 | 1988-02-11 | Dornier System Gmbh | Verfahren zur Erzeugung amorpher Schichten |
US4863576A (en) * | 1986-09-04 | 1989-09-05 | Collins George J | Method and apparatus for hermetic coating of optical fibers |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
JPH07101684B2 (ja) * | 1987-01-21 | 1995-11-01 | 東京エレクトロン株式会社 | アッシング方法およびその装置 |
US4740267A (en) * | 1987-02-20 | 1988-04-26 | Hughes Aircraft Company | Energy intensive surface reactions using a cluster beam |
JPS63283122A (ja) * | 1987-05-15 | 1988-11-21 | Semiconductor Energy Lab Co Ltd | 薄膜作製装置 |
KR960016218B1 (ko) * | 1987-06-05 | 1996-12-07 | 가부시기가이샤 히다찌세이사꾸쇼 | 표면처리방법 및 그 장치 |
US4859303A (en) * | 1987-10-09 | 1989-08-22 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
US4836902A (en) * | 1987-10-09 | 1989-06-06 | Northern Telecom Limited | Method and apparatus for removing coating from substrate |
US4843030A (en) * | 1987-11-30 | 1989-06-27 | Eaton Corporation | Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
US5458724A (en) * | 1989-03-08 | 1995-10-17 | Fsi International, Inc. | Etch chamber with gas dispersing membrane |
JP2506451B2 (ja) * | 1989-08-18 | 1996-06-12 | 富士通株式会社 | 化学気相成長装置及び化学気相成長法 |
DE3937723A1 (de) * | 1989-11-13 | 1991-05-16 | Fraunhofer Ges Forschung | Verfahren und vorrichtung zum herstellen einer silikatschicht in einer integrierten schaltung |
US4987102A (en) * | 1989-12-04 | 1991-01-22 | Motorola, Inc. | Process for forming high purity thin films |
US5198634A (en) * | 1990-05-21 | 1993-03-30 | Mattson Brad S | Plasma contamination removal process |
JP3197557B2 (ja) * | 1990-11-27 | 2001-08-13 | 株式会社半導体エネルギー研究所 | 被膜形成方法 |
US5296271A (en) * | 1991-06-13 | 1994-03-22 | Motorola, Inc. | Microwave treatment of photoresist on a substrate |
US5226967A (en) * | 1992-05-14 | 1993-07-13 | Lam Research Corporation | Plasma apparatus including dielectric window for inducing a uniform electric field in a plasma chamber |
US5415753A (en) * | 1993-07-22 | 1995-05-16 | Materials Research Corporation | Stationary aperture plate for reactive sputter deposition |
US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
US6015503A (en) * | 1994-06-14 | 2000-01-18 | Fsi International, Inc. | Method and apparatus for surface conditioning |
US5580421A (en) * | 1994-06-14 | 1996-12-03 | Fsi International | Apparatus for surface conditioning |
JPH0864559A (ja) * | 1994-06-14 | 1996-03-08 | Fsi Internatl Inc | 基板面から不要な物質を除去する方法 |
US5534107A (en) * | 1994-06-14 | 1996-07-09 | Fsi International | UV-enhanced dry stripping of silicon nitride films |
US6124211A (en) * | 1994-06-14 | 2000-09-26 | Fsi International, Inc. | Cleaning method |
US5635102A (en) | 1994-09-28 | 1997-06-03 | Fsi International | Highly selective silicon oxide etching method |
US5908565A (en) * | 1995-02-03 | 1999-06-01 | Sharp Kabushiki Kaisha | Line plasma vapor phase deposition apparatus and method |
US5728224A (en) * | 1995-09-13 | 1998-03-17 | Tetra Laval Holdings & Finance S.A. | Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate |
US7025831B1 (en) | 1995-12-21 | 2006-04-11 | Fsi International, Inc. | Apparatus for surface conditioning |
US6159297A (en) | 1996-04-25 | 2000-12-12 | Applied Materials, Inc. | Semiconductor process chamber and processing method |
US6143081A (en) * | 1996-07-12 | 2000-11-07 | Tokyo Electron Limited | Film forming apparatus and method, and film modifying apparatus and method |
US6165273A (en) | 1997-10-21 | 2000-12-26 | Fsi International Inc. | Equipment for UV wafer heating and photochemistry |
US6465374B1 (en) | 1997-10-21 | 2002-10-15 | Fsi International, Inc. | Method of surface preparation |
FR2772187B1 (fr) * | 1997-12-09 | 2000-03-17 | Thomson Csf | Procede et dispositif de fabrication de materiaux semiconducteurs iii-n par photolyse d'ammoniac |
US6187133B1 (en) | 1998-05-29 | 2001-02-13 | Applied Materials, Inc. | Gas manifold for uniform gas distribution and photochemistry |
US6143079A (en) * | 1998-11-19 | 2000-11-07 | Asm America, Inc. | Compact process chamber for improved process uniformity |
KR100334085B1 (ko) * | 2000-02-02 | 2002-04-26 | 대한민국 (관리청:특허청장, 승계청:서울대학교 신소재 공동연구소장) | 양자점 형성을 위한 이중 챔버 화학 증착기 |
US6930041B2 (en) * | 2000-12-07 | 2005-08-16 | Micron Technology, Inc. | Photo-assisted method for semiconductor fabrication |
KR100425449B1 (ko) * | 2001-05-18 | 2004-03-30 | 삼성전자주식회사 | 포토 화학기상증착법을 이용한 다층막 형성방법과 그 장치 |
JP4174239B2 (ja) * | 2002-05-27 | 2008-10-29 | キヤノン株式会社 | ガス供給装置、露光システムおよびデバイス製造方法 |
DE10320597A1 (de) * | 2003-04-30 | 2004-12-02 | Aixtron Ag | Verfahren und Vorrichtung zum Abscheiden von Halbleiterschichten mit zwei Prozessgasen, von denen das eine vorkonditioniert ist |
JP2008227033A (ja) * | 2007-03-12 | 2008-09-25 | Tokyo Electron Ltd | 基板処理装置 |
US10658161B2 (en) * | 2010-10-15 | 2020-05-19 | Applied Materials, Inc. | Method and apparatus for reducing particle defects in plasma etch chambers |
JP2012182426A (ja) * | 2011-02-09 | 2012-09-20 | Canon Inc | 固体撮像装置、固体撮像装置を用いた撮像システム及び固体撮像装置の製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2841477A (en) * | 1957-03-04 | 1958-07-01 | Pacific Semiconductors Inc | Photochemically activated gaseous etching method |
US3122463A (en) * | 1961-03-07 | 1964-02-25 | Bell Telephone Labor Inc | Etching technique for fabricating semiconductor or ceramic devices |
DE1900116C3 (de) * | 1969-01-02 | 1978-10-19 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen hxxochreiner, aus Silicium bestehender einkristalliner Schichten |
DE2649685A1 (de) * | 1976-10-29 | 1978-05-03 | Doerrenberg Edelstahl Gmbh | Beschichtungsverfahren |
US4158589A (en) * | 1977-12-30 | 1979-06-19 | International Business Machines Corporation | Negative ion extractor for a plasma etching apparatus |
US4183780A (en) * | 1978-08-21 | 1980-01-15 | International Business Machines Corporation | Photon enhanced reactive ion etching |
US4260649A (en) * | 1979-05-07 | 1981-04-07 | The Perkin-Elmer Corporation | Laser induced dissociative chemical gas phase processing of workpieces |
US4259145A (en) * | 1979-06-29 | 1981-03-31 | International Business Machines Corporation | Ion source for reactive ion etching |
JPS56102577A (en) * | 1980-01-18 | 1981-08-17 | Mitsubishi Electric Corp | Method and device for forming thin film |
CA1159012A (fr) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Dispositif de deposition de plasma |
AU8288282A (en) * | 1981-05-04 | 1982-11-11 | Optical Coating Laboratory, Inc. | Production and utilization of activated molecular beams |
JPS5833829A (ja) * | 1981-08-24 | 1983-02-28 | Toshiba Corp | 薄膜形成装置 |
JPS58202533A (ja) * | 1982-05-21 | 1983-11-25 | Hitachi Ltd | 表面処理装置 |
-
1983
- 1983-05-11 JP JP58082368A patent/JPS59207631A/ja active Granted
-
1984
- 1984-04-26 US US06/604,118 patent/US4540466A/en not_active Expired - Lifetime
- 1984-05-04 DE DE3416470A patent/DE3416470A1/de not_active Ceased
- 1984-05-11 GB GB08412110A patent/GB2141386B/en not_active Expired
- 1984-05-11 FR FR848407292A patent/FR2545984B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
GB8412110D0 (en) | 1984-06-20 |
DE3416470A1 (de) | 1984-11-15 |
FR2545984A1 (fr) | 1984-11-16 |
US4540466A (en) | 1985-09-10 |
GB2141386B (en) | 1986-10-22 |
JPH0332911B2 (fr) | 1991-05-15 |
GB2141386A (en) | 1984-12-19 |
JPS59207631A (ja) | 1984-11-24 |
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